US5919332A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1996-06-06
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Granted: 1999-07-06
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Expires: 2016-06-06
Abstract
Abstract A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.
Inventors
- 👤 Akira Koshiishi
- 👤 Masahiro Ogasawara
- 👤 Keizo Hirose
- 👤 Kazuya Nagaseki
- 👤 Riki Tomoyoshi
- 👤 Makoto Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:52
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32009; H01J37/32082; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H01J37/32633; H01J37/32642; H01J2237/00; H01J2237/02; H01J2237/022; H01J37/32917; H01J37/32935; Y; Y10; Y10S; Y10S156/00; Y10S156/915
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
139 words
A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein an upper insulating member is provided around the upper electrode, an outer lower end portion of the upper insulating member is positioned outside an outer circumference of the lower electrode, the outer lower end portion of the upper insulating member is positioned to be substantially equal to or lower than an upper surface of the substrate, and the narrowest distance between the upper insulating layer and the lower electrode is smaller than a distance between the upper and lower electrodes.
Claim 2
Dependent Claim
139 words
A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein an upper insulating member is provided around the upper electrode, an outer lower end portion of the upper insulating member is positioned outside an outer circumference of the lower electrode, the outer lower end portion of the upper insulating member is positioned to be substantially equal to or lower than an upper surface of the substrate, and the narrowest distance between the upper insulating layer and the lower electrode is smaller than a distance between the upper and lower electrodes.
Claim 3
Dependent Claim
87 words
An apparatus according to claim 1, wherein a lower insulating member is provided around the lower electrode, that the outer lower end portion of the upper insulating member is positioned outside the outer circumference of the lower insulating member, the outer lower end portion of the upper insulating member is positioned to be substantially equal to or lower than the upper surface of the substrate, and the narrowest distance between the upper and lower insulating members is smaller than the distance between the upper and lower electrodes.
Claim 4
Dependent Claim
21 words
An apparatus according to claim 2, wherein said lower insulating member has an upper outer end surface which is inclined downward.
Claim 5
Dependent Claim
21 words
An apparatus according to claim 3 wherein said upper insulating member has a lower outer end surface which is inclined downward.
Claim 6
Dependent Claim
18 words
An apparatus according to claim 1, wherein the upper insulating member is provided with a plasma monitor window.
Claim 7
Dependent Claim
26 words
An apparatus according to claim 1, wherein the lower surface of the upper insulating member is provided with a notch portion used for monitoring a plasma.
Claim 8
Dependent Claim
23 words
An apparatus according to claim 1, wherein the lower surface of the upper insulating member is formed of consecutive surfaces having no gaps.
Claim 9
Dependent Claim
16 words
An apparatus according to claim 1, wherein a grounded electrode is provided around the lower electrode.
Claim 10
Dependent Claim
26 words
An apparatus according to claim 1, wherein the lower insulating member is a focus ring for increasing the incident efficiency of a plasma into the substrate.
Claim 11
Dependent Claim
176 words
A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein an upper insulating member is provided in the periphery of the upper electrode, a first ring-like member made of semiconductor material and a second ring-like member made of insulating material and positioned on an outer circumference of the first ring-like member are provided in the periphery of the lower electrode, the narrowest distance between an extended portion of the upper instulating member which is downward extended from an inner circumference thereof and the second ring-like member is smaller than a distance between the upper and lower electrodes, and the inner circumferential edge of the upper insulating member is arranged so as to correspond to a position between inner and outer circumferential edges of the second ring-like member.
Claim 12
Dependent Claim
176 words
A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein an upper insulating member is provided in the periphery of the upper electrode, a first ring-like member made of semiconductor material and a second ring-like member made of insulating material and positioned on an outer circumference of the first ring-like member are provided in the periphery of the lower electrode, the narrowest distance between an extended portion of the upper instulating member which is downward extended from an inner circumference thereof and the second ring-like member is smaller than a distance between the upper and lower electrodes, and the inner circumferential edge of the upper insulating member is arranged so as to correspond to a position between inner and outer circumferential edges of the second ring-like member.
Claim 13
Dependent Claim
27 words
An apparatus according to claim 10, wherein the first and second ring-like members are focus rings for increasing an incident efficiency of a plasma into the substrate.
Claim 14
Dependent Claim
35 words
An apparatus according to claim 10, wherein said first and ring-like members are partially overlapped with each other to form an overlapped area, and said extended portion has a lower face facing the overlapped area.
Claim 15
Dependent Claim
88 words
A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein a conductive member having a high heat conductivity is embedded inside an insulating member positioned at an peripheral portion of at least one of the upper and lower electrodes.
Claim 16
Dependent Claim
88 words
A plasma processing apparatus wherein upper and lower electrodes are arranged opposite to each other in a processing chamber whose pressure can be freely reduced, a plasma is generated between the upper and lower electrodes by supplying a high frequency power, and processing is performed on a substrate to be processed which is mounted on the lower electrode, wherein a conductive member having a high heat conductivity is embedded inside an insulating member positioned at an peripheral portion of at least one of the upper and lower electrodes.
Claim 17
Dependent Claim
34 words
An apparatus according to claim 13, wherein said insulating member is positioned at the peripheral portion of the upper electrode and a vacuum layer is formed on an upper side of the conductive member.
Claim 18
Dependent Claim
28 words
An apparatus according to claim 13, wherein the conductive member is formed of a kind of material selected from a group of aluminum, poly-crystal silicon, and boron nitride.
References Cited (Backward Citations)
JPS6269620A
Cited
US5529657A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-05 | 2003-01-04 | 2003-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-05 | 2007-01-04 | 2007-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-05 | 2011-01-04 | 2011-07-06 | $7700.00 | Window Closed / Lapsed |