Plasma processor

Abstract

Abstract PURPOSE:To enable a work to be high-speed plasma processed with excellent efficiency and evenness by a method wherein the work is arranged on an electrode with almost the same size as that of the work while a dielectric is fixed on the outer peripheral part of one of the opposing electrodes providing the dielectric with the gap narrower than that between the electrodes. CONSTITUTION:A work 5 arranged on an electrode 2 can be plasma-processed e.g. etched at high speed subject to meeting the several requirements for the gap of around 4-10mm between the electrodes 1 and 2, the gas pressure of 0.5-3Torr and the high-frequency power density of around 1-3W/cm<2>. Besides, a narrow gap structure 4 is provided on the outer peripheral part of electrode 2 to concentrate plasma above the inner electrode 2 encircled by the narrow gap structure 4. The kinds and pressure of led-in gas, the level of high-frequency power supplied for the space between electrodes 1 and 2 are fluctuated by the gap between the narrow gap structure 4 and the electrode 1. Through these procedures, the high speed plasma processing of the work 5 can be provided with excellent efficiency and evenness.

Inventors

• 👤 Hideki Fujimoto
• 👤 秀樹 藤本

Bibliographic Details