Patent US5914519A successfully refreshed from Google Patents.
US5914519A
Expired / Lapsed
US
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Air-gap spacer of a metal-oxide-semiconductor device
Assignee: United Microelectronics Corp
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Filing: 1998-01-20
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Granted: 1999-06-22
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Expires: 2018-01-20
Abstract
Abstract An air-gap spacer of a metal-oxide-semiconductor device comprises a spacer and a cross-sectional L-shaped air-gap. The spacer is adjacent to a sidewall of the gate electrode but not directly contacts to the gate electrode. The cross-sectional L-shaped air-gap is located between the spacer and the gate electrode and between the spacer and the substrate so that the spacer is separated from the gate electrode and the spacer is partially separated from the substrate.
Inventors
- 👤 Jih-Wen Chou
- 👤 Tony Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0229; H10D30/60; H10D30/601; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10D64/675; H10D64/679
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
106 words
An air-gap spacer of a metal-oxide-semiconductor device, wherein the metal-oxide-semiconductor device is formed on a substrate and includes gate electrode on the substrate, at least a lightly doped region adjacent to the gate electrode and in the substrate and a source/drain region in the substrate, the air-gap spacer comprising: a spacer adjacent to a sidewall of the gate electrode but not directly contacting to the gate electrode; and a cross-sectional L-shaped air gap between the spacer and the gate electrode and between the spacer and the substrate so that the spacer is separated from the gate electrode and the spacer is partially separated from the substrate.
Claim 2
Dependent Claim
106 words
An air-gap spacer of a metal-oxide-semiconductor device, wherein the metal-oxide-semiconductor device is formed on a substrate and includes gate electrode on the substrate, at least a lightly doped region adjacent to the gate electrode and in the substrate and a source/drain region in the substrate, the air-gap spacer comprising: a spacer adjacent to a sidewall of the gate electrode but not directly contacting to the gate electrode; and a cross-sectional L-shaped air gap between the spacer and the gate electrode and between the spacer and the substrate so that the spacer is separated from the gate electrode and the spacer is partially separated from the substrate.
Claim 3
Dependent Claim
26 words
A air-gap spacer as claimed in claim 1, further comprising an extended lightly doped region adjacent to the lightly doped region, extending towards the gate electrode.
Claim 4
Dependent Claim
21 words
A air-gap spacer as claimed in claim 2, wherein the extended lightly doped region is shallower than the lightly doped region.
References Cited (Backward Citations)
US5770507A
Cited
US5736446A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-06-21 | 2002-12-21 | 2003-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-06-21 | 2006-12-21 | 2007-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-06-21 | 2010-12-21 | 2011-06-22 | $7700.00 | Window Closed / Lapsed |