Patent US4505012A successfully refreshed from Google Patents.
Patent US5910012A successfully refreshed from Google Patents.
US5910012A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Waveguide type semiconductor photodetecting device method for fabricating
Assignee: NEC Corp
•
Filing: 1997-08-01
•
Granted: 1999-06-08
•
Expires: 2017-08-01
Abstract
Abstract A waveguide type semiconductor photodetecting device has a semiconductor substrate, a photodetecting element, and a waveguide optically coupled with the photodetecting element which can avoid occurrence of light loss in the tapered waveguide even when a width of a light inciding side of the tapered waveguide is widened. The waveguide has a waveguide layer gradually narrowing a width and gradually increasing a layer thickness and a refraction index from light incident side to the photodetecting element. The waveguide is integrated with the photodetecting element on the semiconductor substrate.
Inventors
- 👤 Takeshi Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:33
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/125; G02B6/12004; G02B6/24; G02B6/26; G02B6/30; G02B6/305; H; H10; H10F; H10F77/00; H10F77/40; H10F77/413; G02B2006/12083; G02B2006/12123; G02B2006/12166; G02B2006/12195; Y; Y10; Y10S; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
117 words
A fabrication process of a waveguide type semiconductor photodetecting device having a photodiode portion, a light incident portion, and a waveguide optically coupling the photodiode portion and the light incident portion, the fabrication process comprising the steps of: forming a pair of dielectric masks on a compound semiconductor substrate, said pair of dielectric masks forming a narrow gap therebetween from the light incident portion to the photodiode portion; sequentially growing semiconductor layers comprising a lower clad layer, a core layer and an upper clad layer on said compound substrate by metal organic chemical vapor deposition using said dielectric masks as a growth mask; and removing said dielectric masks and burying said semiconductor layers with a semiconductor layer.
Claim 2
Dependent Claim
117 words
A fabrication process of a waveguide type semiconductor photodetecting device having a photodiode portion, a light incident portion, and a waveguide optically coupling the photodiode portion and the light incident portion, the fabrication process comprising the steps of: forming a pair of dielectric masks on a compound semiconductor substrate, said pair of dielectric masks forming a narrow gap therebetween from the light incident portion to the photodiode portion; sequentially growing semiconductor layers comprising a lower clad layer, a core layer and an upper clad layer on said compound substrate by metal organic chemical vapor deposition using said dielectric masks as a growth mask; and removing said dielectric masks and burying said semiconductor layers with a semiconductor layer.
Claim 3
Dependent Claim
23 words
A fabrication process as set forth in claim 1, wherein each of said dielectric masks has a constant width in said waveguide portion.
Claim 4
Dependent Claim
24 words
A fabrication process as set forth in claim 1, wherein each of said dielectric masks has a width gradually increasing toward said photodiode portion.
Claim 5
Dependent Claim
48 words
A fabrication process as set forth in claim 1, wherein a mask width in said photodiode portion of said dielectric mask is greater than that in said light incident portion, and a core layer formed between said dielectric masks of said photodiode portion forms a light absorption layer.
Claim 6
Dependent Claim
98 words
A fabrication process as set forth in claim 1, wherein said core layer is selected from a group consisting a single layer of InGaAsP, a single layer of InAlGaAs, a multiple quantum well structure of a well layer of InGaAs and a barrier layer of InGaAsP, a multiple quantum well structure of a well layer of InGaAs and a barrier layer of InAlGaAs, a multiple quantum well structure of a well layer of InGaAsP and a barrier layer of InGaAsP, and a multiple quantum well structure of a well layer of InAlGaAs and a barrier layer of InAlGaAs.
References Cited (Backward Citations)
US4886538A
Cited
US5142596A
Cited
US5078516A
Cited
US5323476A
Cited
JPH06204549A
Cited
EP0641049A1
Cited
JPH0766502A
Cited
US5657338A
Cited
US5701379A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-06-07 | 2002-12-07 | 2003-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-06-07 | 2006-12-07 | 2007-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-06-07 | 2010-12-07 | 2011-06-08 | $7700.00 | Window Closed / Lapsed |