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US5899746A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming pattern

Assignee: Sony Corp
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Filing: 1996-08-29
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Granted: 1999-05-04
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Expires: 2016-08-29
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Abstract

Abstract A base is etched using as mask a first masking layer which has been patterned, softened and deformed. Then, the first masking layer is eroded, a second masking layer is selfaligningly formed only on bare portions of the base, and the base is again etched using as mask the second masking layer. Within a pitch of the first masking layer, the base can thus be etched in two regions which are separated from each other. These treatments can also be conducted in two directions.

Inventors

  • 👤 Mikio Mukai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 18:04
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 222 words
A method of forming a pattern, characterized in comprising the steps of: forming on a base a first masking layer in which a covering portion having a first width and an opening having a second width are located in one and same direction in regular succession; altering, by softening and deforming said first masking layer, said first width of said covering portion to a third width which is larger than said first width and said second width of said opening to a fourth width which is smaller than said second width; effecting a first etching on said base using as mask said first masking layer having said covering portion with said third width and said opening with said fourth width; altering, by eroding said first masking layer after said first etching, said width of said covering portion to a fifth width which is smaller than said first width and said width of said opening to a sixth width which is larger than said second width; selfaligningly forming relative to said base, after said eroding, a second masking layer which covers bare portions of said base in said opening; removing said first masking layer after said forming said second masking layer; and effecting a second etching on said base using as mask said second masking layer after said removing said first masking layer.
Claim 2
Independent Claim 222 words
A method of forming a pattern, characterized in comprising the steps of: forming on a base a first masking layer in which a covering portion having a first width and an opening having a second width are located in one and same direction in regular succession; altering, by softening and deforming said first masking layer, said first width of said covering portion to a third width which is larger than said first width and said second width of said opening to a fourth width which is smaller than said second width; effecting a first etching on said base using as mask said first masking layer having said covering portion with said third width and said opening with said fourth width; altering, by eroding said first masking layer after said first etching, said width of said covering portion to a fifth width which is smaller than said first width and said width of said opening to a sixth width which is larger than said second width; selfaligningly forming relative to said base, after said eroding, a second masking layer which covers bare portions of said base in said opening; removing said first masking layer after said forming said second masking layer; and effecting a second etching on said base using as mask said second masking layer after said removing said first masking layer.
Claim 3
Dependent Claim 38 words
A method of forming a pattern according to claim 1, characterized in using as said first masking layer a resist and as said second masking layer an oxide layer formed by oxidizing said bare portions of said base.
Claim 4
Dependent Claim 21 words
A method of forming a pattern according to claim 1, characterized in that said first and second etchings are isotropic ones.
Claim 5
Dependent Claim 21 words
A method of forming a pattern according to claim 1, characterized in that said first and second etchings are anisotropic ones.
Claim 6
Dependent Claim 29 words
A method of forming a pattern according to claim 1, characterized in that one of said first and second etchings is isotropic one, while the other is anisotropic one.
Claim 7
Dependent Claim 93 words
A method of forming a pattern according to claim 1, characterized in comprising the steps of: removing said second masking layer after said second etching; filling up etched portions of said base with insulating layer after said removing said second masking layer; and effecting once again, after said filling up said etched portions of said base with said insulating layer, said steps of forming said first masking layer up to effecting said second etching, wherein a different direction of repetition of the covering portion and the opening is adopted from that adopted before.
Claim 8
Dependent Claim 38 words
A method of forming a pattern according to claim 6, characterized in using as said first masking layer a resist and as said second masking layer an oxide layer formed by oxidizing said bare portions of said base.
Claim 9
Dependent Claim 21 words
A method of forming a pattern according to claim 6, characterized in that said first and second etchings are isotropic ones.
Claim 10
Dependent Claim 21 words
A method of forming a pattern according to claim 6, characterized in that said first and second etchings are anisotropic ones.
Claim 11
Dependent Claim 29 words
A method of forming a pattern according to claim 6, characterized in that one of said first and second etchings is isotropic one, while the other is anisotropic one.

References Cited (Backward Citations)

US4022932A Cited
US4449287A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-05-03 2002-11-02 2003-05-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-05-03 2006-11-02 2007-05-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-05-03 2010-11-02 2011-05-04 $7700.00 Window Closed / Lapsed

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