US5897361A
Expired / Lapsed
US
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Semiconductor device and method of producing same
Assignee: Toshiba Corp
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Filing: 1997-03-24
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Granted: 1999-04-27
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Expires: 2017-03-24
Abstract
Abstract A trench 13 is formed to isolate a first region 11a and a second region 11b where elements of a semiconductor substrate 11 such as a silicon substrate are formed, and a lamination layer of a first silicon oxide layer 14 having a silicon excess stoichiometry (SiO x ; 2<x) and a second silicon oxide layer 15 (SiO 2 ) having an equilibrium composition is filled in the trench 13. The second silicon oxide layer is hydrated. In addition, by heating the semiconductor substrate 11, the first silicon oxide layer 14 is oxidized into the second silicon oxide layer 15 (SiO 2 ) having an equilibrium composition. At this time, the first silicon oxide layer 14 has its volume expanded while it is oxidized into the second silicon oxide layer 15 having an equilibrium composition, while the second silicon oxide layer 15 is contracted due to dehydration by the heating treatment and removal of a defective lattice. Therefore, the volume expansion of the first silicon oxide layer 14 is offset by the volume contraction of the second silicon oxide layer 15 to reduce extensively a stress to be applied to the semiconductor substrate 11, so that the silicon oxide layer filled in the trench 13 can be densified.
Inventors
- 👤 Hidemitsu Egawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/20; H10P14/24; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P95/00; H10P95/90; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0148; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
104 words
A method of producing a semiconductor device, comprising the steps of: forming a trench to provide isolation between a first region and a second region on a semiconductor substrate; depositing a first silicon oxide layer having a silicon excess stoichiometry so that the trench of the semiconductor substrate is filled during, or alternately with, a step of etching a portion of the first silicon oxide layer; removing the first silicon oxide layer formed on the first region and the second region of the semiconductor substrate; and heating the semiconductor substrate so that the excess silicon contained in the first silicon oxide layer is oxidized.
Claim 2
Independent Claim
104 words
A method of producing a semiconductor device, comprising the steps of: forming a trench to provide isolation between a first region and a second region on a semiconductor substrate; depositing a first silicon oxide layer having a silicon excess stoichiometry so that the trench of the semiconductor substrate is filled during, or alternately with, a step of etching a portion of the first silicon oxide layer; removing the first silicon oxide layer formed on the first region and the second region of the semiconductor substrate; and heating the semiconductor substrate so that the excess silicon contained in the first silicon oxide layer is oxidized.
Claim 3
Dependent Claim
38 words
A method of producing a semiconductor device as set forth in claim 1, wherein the step of forming the trench forms the trench so that a depth of the trench is greater than a width of the trench.
Claim 4
Dependent Claim
47 words
A method of producing a semiconductor device as set forth in claim 1, wherein the step of heating the semiconductor substrate heats the semiconductor substrate so that a volume change of the first silicon oxide layer before and after the heating process is about less than 1%.
Claim 5
Dependent Claim
34 words
A method of producing a semiconductor device as set forth in claim 1, wherein the first silicon oxide layer is formed by a CVD method using an SiH 4 gas as a material gas.
Claim 6
Dependent Claim
46 words
A method of producing a semiconductor device as set forth in claim 1, wherein the step of removing the first silicon oxide layer which is formed on the first region and the second region of the semiconductor substrate is performed by a chemical mechanical polishing method.
Claim 7
Independent Claim
112 words
A method of producing a semiconductor device, comprising the steps of: forming a trench to provide isolation between a first region and a second region on a semiconductor substrate; depositing a lamination layer of a first silicon oxide layer having a silicon excess stoichiometry and a second silicon oxide layer having an equilibrium stoichiometry on the semiconductor substrate so that the trench of the semiconductor substrate is filled; removing the first silicon oxide layer and the second silicon oxide layer formed on the first region and the second region of the semiconductor substrate; and heating the semiconductor substrate so that the excess silicon contained in the first silicon oxide layer is oxidized.
Claim 8
Independent Claim
112 words
A method of producing a semiconductor device, comprising the steps of: forming a trench to provide isolation between a first region and a second region on a semiconductor substrate; depositing a lamination layer of a first silicon oxide layer having a silicon excess stoichiometry and a second silicon oxide layer having an equilibrium stoichiometry on the semiconductor substrate so that the trench of the semiconductor substrate is filled; removing the first silicon oxide layer and the second silicon oxide layer formed on the first region and the second region of the semiconductor substrate; and heating the semiconductor substrate so that the excess silicon contained in the first silicon oxide layer is oxidized.
Claim 9
Dependent Claim
38 words
A method of producing a semiconductor device as set forth in claim 6, wherein the step of forming the trench forms the trench so that a depth of the trench is greater than a width of the trench.
Claim 10
Dependent Claim
29 words
A method of producing a semiconductor device as set forth in claim 6, wherein the step of depositing the second silicon oxide layer deposits a hydrated silicon oxide layer.
Claim 11
Dependent Claim
44 words
A method of producing a semiconductor device as set forth in claim 6, wherein the step of depositing the second silicon oxide layer deposits the second silicon oxide layer so that a water content of the second silicon oxide layer is less than 1%.
Claim 12
Dependent Claim
41 words
A method of producing a semiconductor device as set forth in claim 6, wherein an oxygen to oxidize the excess silicon contained in the first silicon oxide layer in the heating step is supplied by diffusing the second silicon oxide layer.
Claim 13
Dependent Claim
45 words
A method of producing a semiconductor device as set forth in claim 6, wherein an oxygen to oxidize the excess silicon contained in the first silicon oxide layer in the heating step is supplied by the hydrated water contained in the second silicon oxide layer.
Claim 14
Dependent Claim
50 words
A method of producing a semiconductor device as set forth in claim 6, wherein the step of removing the first silicon oxide layer and the second silicon oxide layer formed on the first region and the second region of the semiconductor substrate is performed by a chemical mechanical polishing method.
Claim 15
Dependent Claim
43 words
A method of producing a semiconductor device as set forth in claim 1, wherein an overhang of the first silicon oxide layer, formed around the opening of the trench, is etched before the step of depositing the first silicon oxide layer is completed.
Claim 16
Dependent Claim
29 words
A method of producing a semiconductor device as set forth in claim 1, wherein a bias power is applied during the step of depositing the fist silicon oxide layer.
Claim 17
Dependent Claim
44 words
A method of producing a semiconductor device as set forth in claim 1, wherein the steps of depositing the first silicon oxide layer and etching the first silicon oxide layer are alternately performed until the trench is filled with the first silicon oxide layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-26 | 2002-10-26 | 2003-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-26 | 2006-10-26 | 2007-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-26 | 2010-10-26 | 2011-04-27 | $7700.00 | Window Closed / Lapsed |