Thin film transistor, organic electroluminescence display device and manufacturing method of the same

Claim 1

A method of manufacturing an organic electroluminescence display device having a plurality of organic electroluminescence elements and a plurality of thin film transistors formed on a substrate, each of said organic electroluminescence elements and said thin film transistors being manufactured by the steps of: depositing an active layer of semiconductor material on said substrate; forming a source region and a drain region in said active layer; forming a gate insulation layer on said active layer; forming a gate electrode on said gate insulation layer; depositing an insulation interlayer on said active layer and said substrate; removing a part of said insulation interlayer to form contact holes on said source and drain regions of said active layer and organic electroluminescence element forming region; forming a transparent electrode layer in said organic electroluminescence element forming region on said substrate; simultaneously forming first and second barrier metal layers and a contact metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen, said first and second barrier metal layers being formed in said contact holes on said source and drain regions of said active layer, said contact metal layer being formed on said transparent electrode layer; forming source and drain electrode and a conductive lead of aluminum material on said first and second barrier metal layers and said contact metal layer, respectively; forming an organic electroluminescence layer on said transparent electrode layer; and forming an upper electrode layer on said electroluminescence layer.

Claim 2

A method of manufacturing an organic electroluminescence display device having a plurality of organic electroluminescence elements and a plurality of thin film transistors formed on a substrate, each of said organic electroluminescence elements and said thin film transistors being manufactured by the steps of: depositing an active layer of semiconductor material on said substrate; forming a source region and a drain region in said active layer; forming a gate insulation layer on said active layer; forming a gate electrode on said gate insulation layer; depositing an insulation interlayer on said active layer and said substrate; removing a part of said insulation interlayer to form contact holes on said source and drain regions of said active layer and organic electroluminescence element forming region; forming a transparent electrode layer in said organic electroluminescence element forming region on said substrate; simultaneously forming first and second barrier metal layers and a contact metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen, said first and second barrier metal layers being formed in said contact holes on said source and drain regions of said active layer, said contact metal layer being formed on said transparent electrode layer; forming source and drain electrode and a conductive lead of aluminum material on said first and second barrier metal layers and said contact metal layer, respectively; forming an organic electroluminescence layer on said transparent electrode layer; and forming an upper electrode layer on said electroluminescence layer.

Claim 3

A method of manufacturing an organic electroluminescence display device having a plurality of organic electroluminescence elements and a plurality of thin film transistors formed on a substrate, each of said organic electroluminescence elements and said thin film transistors being manufactured by the steps of: depositing an active layer of semiconductor material on said substrate; forming a source region and a drain region in said active layer; forming a gate insulation layer on said active layer; forming a gate electrode on said gate insulation layer; depositing an insulation interlayer on said active layer and said substrate; removing a part of said insulation interlayer to form contact holes on said source and drain regions of said active layer and organic electroluminescence element forming region; forming a transparent electrode layer in said organic electroluminescence element forming region on said substrate; simultaneously forming first and second barrier metal layers and a contact metal layer of titanium, said first and second barrier metal layers being formed in said contact holes on said source and drain regions of said active layer, said contact metal layer being formed on said transparent electrode layer; forming source and drain electrode and a conductive lead of aluminum material on said first and second barrier metal layers and said contact metal layer, respectively; forming an organic electroluminescence layer on said transparent electrode layer; and forming an upper electrode layer on said electroluminescence layer.

Claim 4

A method of manufacturing an organic electroluminescence display device having a plurality of organic electroluminescence elements and a plurality of thin film transistors formed on a substrate, each of said organic electroluminescence elements and said thin film transistors being manufactured by the steps of: depositing an active layer of semiconductor material on said substrate; forming a source region and a drain region in said active layer; forming a gate insulation layer on said active layer; forming a gate electrode on said gate insulation layer; depositing an insulation interlayer on said active layer and said substrate; removing a part of said insulation interlayer to form contact holes on said source and drain regions of said active layer and organic electroluminescence element forming region; forming a transparent electrode layer in said organic electroluminescence element forming region on said substrate; simultaneously forming first and second barrier metal layers and a contact metal layer of titanium, said first and second barrier metal layers being formed in said contact holes on said source and drain regions of said active layer, said contact metal layer being formed on said transparent electrode layer; forming source and drain electrode and a conductive lead of aluminum material on said first and second barrier metal layers and said contact metal layer, respectively; forming an organic electroluminescence layer on said transparent electrode layer; and forming an upper electrode layer on said electroluminescence layer.

Claim 5

A method of manufacturing an organic electroluminescence display device comprising the steps of: forming a pixel electrode over a substrate; preparing a first thin film transistor having at least source, drain and channel regions, wherein said drain region is electrically connected to said pixel electrode; preparing a second thin film transistor for switching said first thin film transistor; disposing an organic electroluminescence layer adjacent to said pixel electrode; and forming a wiring electrically connected to at least one of said pixel electrode, said first thin film transistor and said second thin film transistor, wherein said wiring includes a conductive film comprising titanium.

Claim 6

A method of manufacturing an organic electroluminescence display device comprising the steps of: forming a pixel electrode over a substrate; preparing a first thin film transistor having at least source, drain and channel regions, wherein said drain region is electrically connected to said pixel electrode; preparing a second thin film transistor for switching said first thin film transistor; disposing an organic electroluminescence layer adjacent to said pixel electrode; and forming a wiring electrically connected to at least one of said pixel electrode, said first thin film transistor and said second thin film transistor, wherein said wiring includes a conductive film comprising titanium.