Semiconductor device and fabrication process thereof

Claim 2

A semiconductor device comprising: an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; a localized oxidation of silicon type field oxide layer provided in an isolating region of the surface of said silicon substrate surrounding said active region; a gate electrode extending across the surface of said active region in <110> direction via a gate oxide layer provided on the surface of said active region; a silicon oxide layer cap directly covering the upper surface of said gate electrode; a silicon nitride layer spacer directly covering the side surface of said gate electrode and said silicon oxide layer cap; a reverse conductivity type source and drain region being constituted of a reverse conductivity type diffusion layer provided on the surface of said active region in self-alignment with said gate electrode and said field oxide layer, a first silicon layer of reverse conductivity type monocrystalline silicon, directly covering the surface of said reverse conductive type diffusion layer in self-alignment with said silicon nitride layer spacer and said field oxide layer and having a side surface consisting of a {110} face and an upper surface consisting of a {100} face as major surface, and a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field oxide layer; an interlayer insulation layer covering said field oxide layer, said silicon oxide layer cap, said silicon nitride spacer and said second silicon layer; a contact hole provided through said interlayer insulation layer and reaching the upper surface of said second silicon layer; and a wiring provided on the surface of said interlayer insulation layer and connected to said source and drain region via said contact hole.

Claim 3

A semiconductor device as set forth in claim 1, wherein said second silicon layer is formed of a monocrystalline silicon.

Claim 4

A semiconductor device as set forth in claim 1, wherein the minimum interval of said gate electrode and minimum diameter of said contact hole are equal to each other.

Claim 5

A semiconductor device as set forth in claim 1, wherein the minimum interval of said silicon nitride layer spacer belonging to adjacent gate electrodes and the minimum diameter of said contact hole are equal to each other.

Claim 6

A semiconductor device comprising: an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; a groove provided in an isolating region on the surface of said silicon substrate surrounding said active region; a field insulation layer filled in said groove; a gate electrode extending across the surface of said active region in <110> direction via a gate oxide layer provided on the surface of said active region; a silicon oxide layer cap directly covering the upper surface of said gate electrode; a silicon nitride layer spacer directly covering the side surface of said gate electrode and said silicon oxide layer cap; a reverse conductivity type source and drain region being constituted of a reverse conductivity type diffusion layer provided on the surface of said active region in self-alignment with said gate electrode and said field oxide layer, a first silicon layer of reverse conductivity type monocrystalline silicon, directly covering the surface of said reverse conductive type diffusion layer in self-alignment with said silicon nitride layer spacer and said field oxide layer and having a side surface consisting of a {110} face and an upper surface consisting of a {100} face as major surface, and a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field oxide layer; an interlayer insulation layer covering said field oxide layer, said silicon oxide layer cap, said silicon nitride spacer and said second silicon layer; a contact hole provided through said interlayer insulation layer and reaching the upper surface of said second silicon layer; and a wiring provided on the surface of said interlayer insulation layer and connected to said source and drain region via said contact hole.

Claim 7

A semiconductor device comprising: an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; a groove provided in an isolating region on the surface of said silicon substrate surrounding said active region; a field insulation layer filled in said groove; a gate electrode extending across the surface of said active region in <110> direction via a gate oxide layer provided on the surface of said active region; a silicon oxide layer cap directly covering the upper surface of said gate electrode; a silicon nitride layer spacer directly covering the side surface of said gate electrode and said silicon oxide layer cap; a reverse conductivity type source and drain region being constituted of a reverse conductivity type diffusion layer provided on the surface of said active region in self-alignment with said gate electrode and said field oxide layer, a first silicon layer of reverse conductivity type monocrystalline silicon, directly covering the surface of said reverse conductive type diffusion layer in self-alignment with said silicon nitride layer spacer and said field oxide layer and having a side surface consisting of a {110} face and an upper surface consisting of a {100} face as major surface, and a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field oxide layer; an interlayer insulation layer covering said field oxide layer, said silicon oxide layer cap, said silicon nitride spacer and said second silicon layer; a contact hole provided through said interlayer insulation layer and reaching the upper surface of said second silicon layer; and a wiring provided on the surface of said interlayer insulation layer and connected to said source and drain region via said contact hole.

Claim 8

A semiconductor device as set forth in claim 5, wherein said second silicon layer is formed of a monocrystalline silicon.

Claim 9

A semiconductor device as set forth in claim 5, wherein the minimum interval of said gate electrode and minimum diameter of said contact hole are equal to each other.

Claim 10

A semiconductor device as set forth in claim 5, wherein the minimum interval of said silicon nitride layer spacer belonging to adjacent gate electrodes and the minimum diameter of said contact hole are equal to each other.

Claim 11

A fabrication process of a semiconductor device comprising: step of forming a localized oxidation of silicon type field oxide layer in an isolating region surrounding an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; step of forming a gate oxide layer on the surface of said active region by thermal oxidation; step of forming a conductive layer over the entire surface; step of forming a silicon oxide layer covering said conductive layer; step of forming a gate electrode extending across the surface of said active region in <110> direction via said gate oxide layer and a silicon oxide layer cap directly covering the upper surface of said gate electrode by patterning said silicon oxide layer and said conductive layer; step of forming a reverse conductivity type diffusion layer on the surface of said active region using said gate electrode and said field oxide layer as a mask; step of forming a silicon nitride layer over the entire surface; step of performing etching back of said silicon nitride layer by anisotropic etching to form a silicon nitride layer spacer directly covering said silicon oxide layer cap and the side surface of said gate electrode; step of removing said gate oxide layer in self-alignment with said silicon nitride layer spacer and said field oxide layer; step of forming a first silicon layer of reverse conductivity type monocrystalline silicon on the surface of said reverse conductive type diffusion layer by anisotropic selective epitaxial growth of monocrystalline silicon; step of forming a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field oxide layer, by isotropic selective epitaxial growth method of monocrystalline silicon or selective growth method of polycrystalline silicon; step of forming an interlayer insulation layer over the entire surface; step of forming a contact hole through said interlayer insulation layer, said contact hole reaching the upper surface of said second silicon layer; and step of forming a wiring on the surface of said interlayer insulation layer and said wiring being connected to said source and drain region via said contact hole.

Claim 12

A fabrication process of a semiconductor device comprising: step of forming a localized oxidation of silicon type field oxide layer in an isolating region surrounding an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; step of forming a gate oxide layer on the surface of said active region by thermal oxidation; step of forming a conductive layer over the entire surface; step of forming a silicon oxide layer covering said conductive layer; step of forming a gate electrode extending across the surface of said active region in <110> direction via said gate oxide layer and a silicon oxide layer cap directly covering the upper surface of said gate electrode by patterning said silicon oxide layer and said conductive layer; step of forming a reverse conductivity type diffusion layer on the surface of said active region using said gate electrode and said field oxide layer as a mask; step of forming a silicon nitride layer over the entire surface; step of performing etching back of said silicon nitride layer by anisotropic etching to form a silicon nitride layer spacer directly covering said silicon oxide layer cap and the side surface of said gate electrode; step of removing said gate oxide layer in self-alignment with said silicon nitride layer spacer and said field oxide layer; step of forming a first silicon layer of reverse conductivity type monocrystalline silicon on the surface of said reverse conductive type diffusion layer by anisotropic selective epitaxial growth of monocrystalline silicon; step of forming a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field oxide layer, by isotropic selective epitaxial growth method of monocrystalline silicon or selective growth method of polycrystalline silicon; step of forming an interlayer insulation layer over the entire surface; step of forming a contact hole through said interlayer insulation layer, said contact hole reaching the upper surface of said second silicon layer; and step of forming a wiring on the surface of said interlayer insulation layer and said wiring being connected to said source and drain region via said contact hole.

Claim 13

A fabrication process of a semiconductor device as set forth in claim 9, wherein said anisotropic selective epitaxial growth is performed using disilane (Si 2 H 6 ) or mono silane (SiH 4 ) as a primary material gas.

Claim 14

A fabrication process of a semiconductor device as set forth in claim 10, wherein said second silicon layer is formed by isotropic selective epitaxial growth method of monocrystalline silicon employing the same primary material gas as said first silicon layer, and a growth temperature of said second silicon layer is lower than a growth temperature of said first silicon layer.

Claim 15

A fabrication process of a semiconductor device comprising: step of forming a groove in an isolating region surrounding an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; step of forming a field insulation layer by forming an insulation layer over the entire surface and removing said insulation layer, leaving said insulation layer within said groove; step of forming a gate oxide layer on the surface of said active region by thermal oxidation; step of forming a conductive layer over the entire surface; step of forming a silicon oxide layer covering said conductive layer; step of forming a gate electrode extending across the surface of said active region in <110> direction via said gate oxide layer and a silicon oxide layer cap directly covering the upper surface of said gate electrode by patterning said silicon oxide layer and said conductive layer; step of forming a reverse conductivity type diffusion layer on the surface of said active region, using said gate electrode and said field insulation layer as a mask; step of forming a silicon nitride layer over the entire surface; step of performing etching back for said silicon nitride layer by anisotropic etching to form a silicon nitride layer spacer directly covering said silicon oxide layer cap and the side surface of said gate electrode; step of removing said gate oxide layer in self-alignment with said silicon nitride layer spacer and said field insulation layer; step of forming a first silicon layer of reverse conductivity type monocrystalline silicon on the surface of said reverse conductive type diffusion layer by anisotropic selective epitaxial growth of monocrystalline silicon; step of forming a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field insulation layer, by isotropic selective epitaxial growth method of monocrystalline silicon or selective growth method of polycrystalline silicon; step of forming an interlayer insulation layer over the entire surface; step of forming a contact hole through said interlayer insulation layer, said contact hole reaching the upper surface of said second silicon layer; and step of forming a wiring on the surface of said interlayer insulation layer and said wiring being connected to said source and drain region via said contact hole.

Claim 16

A fabrication process of a semiconductor device comprising: step of forming a groove in an isolating region surrounding an active region defined by an edge of <110> direction provided on the surface of one conductivity type silicon substrate having a major surface consisting of a {100} face; step of forming a field insulation layer by forming an insulation layer over the entire surface and removing said insulation layer, leaving said insulation layer within said groove; step of forming a gate oxide layer on the surface of said active region by thermal oxidation; step of forming a conductive layer over the entire surface; step of forming a silicon oxide layer covering said conductive layer; step of forming a gate electrode extending across the surface of said active region in <110> direction via said gate oxide layer and a silicon oxide layer cap directly covering the upper surface of said gate electrode by patterning said silicon oxide layer and said conductive layer; step of forming a reverse conductivity type diffusion layer on the surface of said active region, using said gate electrode and said field insulation layer as a mask; step of forming a silicon nitride layer over the entire surface; step of performing etching back for said silicon nitride layer by anisotropic etching to form a silicon nitride layer spacer directly covering said silicon oxide layer cap and the side surface of said gate electrode; step of removing said gate oxide layer in self-alignment with said silicon nitride layer spacer and said field insulation layer; step of forming a first silicon layer of reverse conductivity type monocrystalline silicon on the surface of said reverse conductive type diffusion layer by anisotropic selective epitaxial growth of monocrystalline silicon; step of forming a reverse conductivity type second silicon layer directly covering the upper surface and the side surface of said first silicon layer and extending at least over the upper surface of said silicon oxide layer cap and said field insulation layer, by isotropic selective epitaxial growth method of monocrystalline silicon or selective growth method of polycrystalline silicon; step of forming an interlayer insulation layer over the entire surface; step of forming a contact hole through said interlayer insulation layer, said contact hole reaching the upper surface of said second silicon layer; and step of forming a wiring on the surface of said interlayer insulation layer and said wiring being connected to said source and drain region via said contact hole.

Claim 17

A fabrication process of a semiconductor device as set forth in claim 12, wherein said anisotropic selective epitaxial growth is performed using disilane (Si 2 H 6 ) or mono silane (SiH 4 ) as a primary material gas.

Claim 18

A fabrication process of a semiconductor device as set forth in claim 13, wherein said second silicon layer is formed by isotropic selective epitaxial growth method of monocrystalline silicon employing the same primary material gas as said first silicon layer, and a growth temperature of said second silicon layer is lower than a growth temperature of said first silicon layer.