Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To prevent contact resistance, alloy spike, aluminium disconnection and current leak from happening by a method wherein a silicon nitride film is provided on the side of contact regions to connect diffusion regions containing the first conductive type impurity to metallic wirings on the upper layer. CONSTITUTION:N type diffusion layers 13 are formed in the regions encircled with field oxide films on a P type silicon substrate 11 and then an oxide film 14 is formed and parts of the oxide film 14 on the N type diffusion layers 13 are opened. Next nitride films 15 0.1mum thick are formed only on the side walls of said film 14 and then an N type silicon 16 is expitaxially grown inside the opened regions. Further aluminium wirings 17 are selectively formed to complete the circuit device. Through these procedures, any aluminium disconnection on the contact openings and current leak may be prevented from happening by means of flattening the contact regions. Besides, an issue of aluminium step coverage may be settled simultaneously restricting the problem of increasing contact resistance.

Inventors

• 👤 Koji Eguchi
• 👤 江口　宏次

Bibliographic Details