US5893748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor devices with small contacts, vias, or damascene trenches
Assignee: Advanced Micro Devices Inc
•
Filing: 1997-02-10
•
Granted: 1999-04-13
•
Expires: 2017-02-10
Abstract
Abstract A method for producing a small feature in a semiconductor device includes depositing a mask material on an unpatterned layer in which an ultra-narrow opening is to be formed, and then masking and etching the mask material to form a narrow opening. A spacer material is then deposited on the mask material, with spacer material settling into and covering the narrow opening. Thereafter, a portion of the spacer material is removed by etching, leaving some spacer material in the opening but exposing an ultra-narrow region of the first layer at the bottom of the opening in the mask material. The ultra-narrow region left uncovered by the spacer material is smaller than the narrow region in the mask material. Once the ultra-narrow region is uncovered, material in the first layer is removed through the ultra-narrow region, by anisotropic etching, for example, to form an ultra-narrow opening in the first layer.
Inventors
- 👤 Ming-Ren Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:14
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/089; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/974
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
245 words
A method for producing a narrow opening in a layer of a semiconductor device, the method comprising the steps of: depositing a mask layer onto a first layer in which the opening is to be formed, said mask layer having at least one defect opening exposing said first layer and being of a dimension below a critical dimension; transferring a pattern onto the mask layer by creating an opening in the mask layer, said opening having a dimension substantially greater than that of the defect opening; depositing a spacer mask layer of spacer mask material onto the mask layer, the spacer mask material extending into the interior of the mask layer opening and the defect opening; removing a portion of the spacer mask layer, leaving the defect opening substantially filled with the spacer mask material and a deposit of spacer mask material in the interior of the mask layer opening such that only a portion of the mask layer opening is covered by the spacer mask material; removing a portion of the first layer through the portion of the mask layer opening not covered by the spacer mask material to create the narrow opening in the first layer, the spacer mask material substantially filling the defect opening preventing removal of any portion of the first layer through the defect opening; and removing the mask layer and the spacer mask material which substantially fills the defect opening and covers a portion of the mask layer opening.
Claim 2
Independent Claim
245 words
A method for producing a narrow opening in a layer of a semiconductor device, the method comprising the steps of: depositing a mask layer onto a first layer in which the opening is to be formed, said mask layer having at least one defect opening exposing said first layer and being of a dimension below a critical dimension; transferring a pattern onto the mask layer by creating an opening in the mask layer, said opening having a dimension substantially greater than that of the defect opening; depositing a spacer mask layer of spacer mask material onto the mask layer, the spacer mask material extending into the interior of the mask layer opening and the defect opening; removing a portion of the spacer mask layer, leaving the defect opening substantially filled with the spacer mask material and a deposit of spacer mask material in the interior of the mask layer opening such that only a portion of the mask layer opening is covered by the spacer mask material; removing a portion of the first layer through the portion of the mask layer opening not covered by the spacer mask material to create the narrow opening in the first layer, the spacer mask material substantially filling the defect opening preventing removal of any portion of the first layer through the defect opening; and removing the mask layer and the spacer mask material which substantially fills the defect opening and covers a portion of the mask layer opening.
Claim 3
Dependent Claim
50 words
The method of claim 1, wherein the step of transferring a pattern onto the mask layer includes the steps of masking the mask layer with a photo-resist layer, forming, a pattern in the photo-resist layer and etching the mask layer in accordance with the pattern formed in the photo-resist layer.
Claim 4
Dependent Claim
20 words
The method of claim 1, wherein the step of removing the portion of the spacer mask material includes anisotropic etching.
Claim 5
Dependent Claim
23 words
The method of claim 3, wherein the step of removing a portion of the first layer includes anisotropic etching, of the first layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-12 | 2002-10-12 | 2003-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-12 | 2006-10-12 | 2007-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-12 | 2010-10-12 | 2011-04-13 | $7700.00 | Window Closed / Lapsed |