Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
58 words
A low-temperature calcined ceramic comprising a sintered body obtained by calcining a mixture of a glass and an SiO 2 filler, wherein the sintered body contains an SiO 2 crystal having an X-ray diffraction image in which the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05° (2θ) to the lower angle side.
Claim 2
Dependent Claim
58 words
A low-temperature calcined ceramic comprising a sintered body obtained by calcining a mixture of a glass and an SiO 2 filler, wherein the sintered body contains an SiO 2 crystal having an X-ray diffraction image in which the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05° (2θ) to the lower angle side.
Claim 3
Dependent Claim
16 words
A low-temperature calcined ceramic of claim 1, wherein the SiO 2 filler is quartz or cristobalite.
Claim 4
Dependent Claim
24 words
A low-temperature calcined ceramic of claim 1, wherein the sintered body contains an enstatite crystal having an average aspect ratio of at least 3.
Claim 5
Dependent Claim
82 words
A wiring body comprising an insulating substrate having a metallized wiring layer formed on the surface or in the inside thereof, wherein the insulating substrate is made up of a sintered body obtained by calcining a mixture of a glass and an SiO 2 filler and the sintered body contains an SiO 2 crystal having an X-ray diffraction image in which the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05° (2θ) to the lower angle side.
Claim 6
Dependent Claim
82 words
A wiring body comprising an insulating substrate having a metallized wiring layer formed on the surface or in the inside thereof, wherein the insulating substrate is made up of a sintered body obtained by calcining a mixture of a glass and an SiO 2 filler and the sintered body contains an SiO 2 crystal having an X-ray diffraction image in which the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05° (2θ) to the lower angle side.
Claim 7
Dependent Claim
15 words
A wiring boad of claim 4, wherein the SiO 2 filler is quartz or cristobalite.
Claim 8
Dependent Claim
100 words
A mounted structure of a package for accommodating a semiconductor formed by connecting a package for accommodating a semiconductor having a wiring boad comprising an insulating substrate having a metallized layer formed on the surface or in the inside thereof, wherein the insulating substrate is made up of a sintered body obtained by calcining a mixture of a glass and an SiO 2 filler and the sintered material contains an SiO 2 crystal having an X-ray diffraction image that the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05° (2θ) to the lower angle side.
Claim 9
Dependent Claim
100 words
A mounted structure of a package for accommodating a semiconductor formed by connecting a package for accommodating a semiconductor having a wiring boad comprising an insulating substrate having a metallized layer formed on the surface or in the inside thereof, wherein the insulating substrate is made up of a sintered body obtained by calcining a mixture of a glass and an SiO 2 filler and the sintered material contains an SiO 2 crystal having an X-ray diffraction image that the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05° (2θ) to the lower angle side.
Claim 10
Dependent Claim
15 words
A mounted structure of claim 6, wherein the SiO 2 filler is quartz or cristobalit.