US5886385A
Expired / Lapsed
US
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Semiconductor device and manufacturing method thereof
Assignee: Toshiba Corp
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Filing: 1997-08-20
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Granted: 1999-03-23
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Expires: 2017-08-20
Abstract
Abstract A semiconductor device comprises: a first semiconductor layer 6 having a first conductivity formed on a substrate having a surface of an insulating material 4; a source region 16a and a drain region 16b, which are formed on the first semiconductor layer so as to be separated from each other and which have a second conductivity different from the first conductivity; a channel region 6 formed on the first semiconductor layer between the source region and the drain region; a gate electrode 10 formed on the channel region a gate sidewall 14 of an insulating material formed on a side of the gate electrode; and a second semiconductor layer 18 having the first conductivity formed on at least the source region. This semiconductor device can effectively suppress the floating-body effect with a simple structure.
Inventors
- 👤 Osamu Arisumi
- 👤 Akira Nishiyama
- 👤 Makoto Yoshimi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6713; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
117 words
A semiconductor device comprising: a first semiconductor layer having a first conductivity formed on a substrate having a surface of an insulating material; a source region and a drain region, which are formed in the first semiconductor layer so as to be separated from each other and which have a second conductivity different from the first conductivity; a channel region formed in the first semiconductor layer between the source region and the drain region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; and a second semiconductor layer having the first conductivity formed on at least the source region so as to be isolated from the gate electrode.
Claim 2
Dependent Claim
117 words
A semiconductor device comprising: a first semiconductor layer having a first conductivity formed on a substrate having a surface of an insulating material; a source region and a drain region, which are formed in the first semiconductor layer so as to be separated from each other and which have a second conductivity different from the first conductivity; a channel region formed in the first semiconductor layer between the source region and the drain region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; and a second semiconductor layer having the first conductivity formed on at least the source region so as to be isolated from the gate electrode.
Claim 3
Dependent Claim
55 words
The semiconductor device according to claim 1, which further comprises an electrode wiring layer of at least one of a metal or a metal compound, said electrode wiring layer being formed on said source region so as to contact said source region, and a side of said electrode wiring layer contacting said second semiconductor layer.
Claim 4
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein each of said first and second semiconductor layers is a single crystal silicon layer.
Claim 5
Dependent Claim
19 words
The semiconductor device according to claim 3, which further comprises a silicide layer formed on said second semiconductor layer.
Claim 6
Dependent Claim
39 words
The semiconductor device according to claim 1, wherein said first semiconductor layer is a single crystal silicon layer, and said second semiconductor layer is an alloy layer of silicon mixed with a material having a narrower bandgap than silicon.
Claim 7
Dependent Claim
19 words
The semiconductor device according to claim 5, which further comprises a silicide layer formed on said second semiconductor layer.
Claim 8
Dependent Claim
37 words
The semiconductor device according to claim 1, further comprising a gate sidewall of an insulating material formed on a side of the gate electrode, the gate sidewall electrically insulating the second semiconductor layer from the gate electrode.
Claim 9
Dependent Claim
18 words
The semiconductor device according to claim 1, wherein the second semiconductor layer is on the first semiconductor layer.
References Cited (Backward Citations)
US4447823A
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JPS6115369A
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US5040037A
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JPH0575120A
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JPH07302908A
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US5698869A
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| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
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