Patent US5880495A successfully refreshed from Google Patents.
US5880495A
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Active pixel with a pinned photodiode
Assignee: Omnivision Technologies Inc
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Filing: 1998-01-08
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Granted: 1999-03-09
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Expires: 2018-01-08
Abstract
Abstract An active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.
Inventors
- 👤 Datong Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:29
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/80; H10F39/803
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
123 words
An active pixel formed in a semiconductor substrate having a first conductivity type, said active pixel for use in an imaging array, said active pixel comprising: a pinned photodiode formed in said semiconductor substrate; a transfer well having a second conductivity type formed in said substrate, said transfer well adjacent said pinned photodiode; a transfer gate formed adjacent to said transfer well such that said transfer well is positioned substantially between said pinned photodiode and said transfer gate, said transfer gate for controlling the flow of a signal charge from said pinned photodiode through said transfer well and under said transfer gate; and an output well adjacent said transfer gate for receiving said signal charge and routing said signal charge to output circuitry.
Claim 2
Dependent Claim
123 words
An active pixel formed in a semiconductor substrate having a first conductivity type, said active pixel for use in an imaging array, said active pixel comprising: a pinned photodiode formed in said semiconductor substrate; a transfer well having a second conductivity type formed in said substrate, said transfer well adjacent said pinned photodiode; a transfer gate formed adjacent to said transfer well such that said transfer well is positioned substantially between said pinned photodiode and said transfer gate, said transfer gate for controlling the flow of a signal charge from said pinned photodiode through said transfer well and under said transfer gate; and an output well adjacent said transfer gate for receiving said signal charge and routing said signal charge to output circuitry.
Claim 3
Dependent Claim
20 words
The active pixel of claim 1 wherein said first conductivity type is p-type and said second conductivity type is n-type.
Claim 4
Dependent Claim
26 words
The active pixel of claim 1 further including: a reset gate adjacent to said output well; and a supply voltage well adjacent to said reset gate.
Claim 5
Dependent Claim
40 words
The active pixel of claim 1 wherein said pinned photodiode is formed by a deep well in said substrate having said second conductivity type and a shallow well atop said deep well, said shallow well having said first conductivity type.
References Cited (Backward Citations)
US5471515A
Cited
US5625210A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-08 | 2002-09-07 | 2003-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-08 | 2006-09-07 | 2007-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-08 | 2010-09-07 | 2011-03-09 | $7700.00 | Window Closed / Lapsed |