Semiconductor device having first transistor rows with second transistor rows connected therebetween

Claim 2

A semiconductor device comprising: a plurality of first transistor rows each including a plurality of first transistors connected in series; and a plurality of second transistor rows provided between the first transistor rows and each including a plurality of second transistors; wherein a source/drain region of one first transistor in one first transistor row is connected to a source/drain region of another first transistor in another first transistor row by a second transistor in the second transistor row.

Claim 3

A semiconductor device as set forth in claim 1, wherein said one first transistor in said one first transistor row is disposed adjacent to said another first transistor in said another first transistor row, and the second transistor connected to said one and another first transistors is disposed between said one first transistor row and said another first transistor row.

Claim 4

A semiconductor device as set forth in claim 1, wherein at least one of the first transistors and the second transistors are of floating gate type.

Claim 5

A semiconductor device comprising: a plurality of first word lines disposed on a semiconductor substrate with intervention of a first gate insulating film and extending parallel to each other in a first direction; a plurality of first transistors each having a gate electrode connected to a corresponding one of the first word lines; a plurality of second word lines disposed between the first word lines with intervention of a second insulating film and extending in the first direction; a plurality of second transistors each having a gate electrode connected to a corresponding one of the second word lines; wherein the first transistors each share a source/drain region of an adjacent first transistor juxtaposed thereto in a second direction perpendicular to the first direction, and the second transistors each share a source/drain region of an adjacent second transistor juxtaposed thereto in the first direction; and source/drain regions of the first transistors are formed in the semiconductor substrate below the second word lines, and the first transistors each share a source/drain region of an adjacent second transistor.

Claim 6

A semiconductor device comprising: a plurality of first word lines disposed on a semiconductor substrate with intervention of a first gate insulating film and extending parallel to each other in a first direction; a plurality of first transistors each having a gate electrode connected to a corresponding one of the first word lines; a plurality of second word lines disposed between the first word lines with intervention of a second insulating film and extending in the first direction; a plurality of second transistors each having a gate electrode connected to a corresponding one of the second word lines; wherein the first transistors each share a source/drain region of an adjacent first transistor juxtaposed thereto in a second direction perpendicular to the first direction, and the second transistors each share a source/drain region of an adjacent second transistor juxtaposed thereto in the first direction; and source/drain regions of the first transistors are formed in the semiconductor substrate below the second word lines, and the first transistors each share a source/drain region of an adjacent second transistor.

Claim 7

A semiconductor device as set forth in claim 4, wherein the semiconductor substrate has a plurality of trenches extending parallel to each other in the first direction; the first word lines are formed on side walls of the respective trenches and the second word lines are formed on top face portions of the semiconductor substrate between the trenches and on bottoms of the trenches.

Claim 8

A semiconductor device as set forth in claim 4, wherein the semiconductor substrate has a plurality of trenches extending parallel to each other in the first direction; the second word lines are formed on the side walls of the respective trenches and the first word lines are formed on the top face portions of the semiconductor substrate between the trenches and on the bottoms of the trenches.