Word line driver for semiconductor memories

Claim 2

A memory circuit comprising: an array of memory having a plurality of memory cells respectively located at intersections of a plurality of columns and a plurality of rows, each row being divided into a plurality of segments of sub-word lines; a row decoder having inputs coupled to receive row address information and an output coupled to a global word line; and a plurality of sub-word line drivers respectively located at various intervals along each row, each sub-word line driver having an input coupled to a respective global word line and an output coupled to a respective sub-word line, wherein, said sub-word line driver comprises an inverting circuit for locally inverting a signal on said respective global word line, wherein said inverting circuit comprises an NMOS pull-down transistor having a gate terminal coupled to said respective global word line and a source/drain terminal coupled to a pull-up device, and wherein said pull-up device comprises an MOS transistor having a gate terminal coupled to a control signal, and wherein said control signal switches said MOS transistor ON and OFF according to a predefined timing.

Claim 3

The memory circuit of claim 1 wherein said predefined timing is defined by a time period during which a signal on said global word line and a signal on said sub-word line switch state.

Claim 4

The memory circuit of claim 1 wherein said MOS transistor is ON during a first part of an active cycle when said signal on said global word line and said signal on said sub-word line switch states, and OFF during a second part of an active cycle when said signal on said global word line and said signal on said sub-word line reach a final value.

Claim 5

The memory circuit of claim 1 wherein said inverting circuit further comprises a static pull-up element.

Claim 6

The memory circuit of claim 4 wherein said static pull-up element is a resistor.

Claim 7

The memory circuit of claim 4 wherein said static pull-up element is an MOS transistor having a gate terminal coupled to a logic high voltage.

Claim 8

The memory circuit of claim 4 wherein said MOS transistor is on before a global word line is selected, and turns off after the start of an active cycle and before said signal on said global word line switches state.

Claim 9

A memory circuit comprising: an array of memory having a plurality of memory cells respectively located at intersections of a plurality of columns and a plurality of rows, each row being divided into a plurality of segments of sub-word lines; a row decoder having inputs coupled to receive row address information and an output coupled to a global word line; and a plurality of sub-word line drivers respectively located at various intervals along each row, each sub-word line driver having an input coupled to a respective global word line and an output coupled to a respective sub-word line, wherein, said sub-word line driver comprises: a first transistor coupled to said respective sub-word line; an inverting circuit for locally inverting a signal on said respective global word line and driving a gate terminal of said first transistor; a first internal driver circuit having a first input coupled to a respective global word line, a second input coupled to an output of said inverting circuit, and an output coupled to a first sub-word line; and a second internal driver circuit having a first input coupled to said respective global word line, a second input coupled to said output of said inverting circuit, and an output coupled to a second sub-word line.

Claim 10

A memory circuit comprising: an array of memory having a plurality of memory cells respectively located at intersections of a plurality of columns and a plurality of rows, each row being divided into a plurality of segments of sub-word lines; a row decoder having inputs coupled to receive row address information and an output coupled to a global word line; and a plurality of sub-word line drivers respectively located at various intervals along each row, each sub-word line driver having an input coupled to a respective global word line and an output coupled to a respective sub-word line, wherein, said sub-word line driver comprises: a first transistor coupled to said respective sub-word line; an inverting circuit for locally inverting a signal on said respective global word line and driving a gate terminal of said first transistor; a first internal driver circuit having a first input coupled to a respective global word line, a second input coupled to an output of said inverting circuit, and an output coupled to a first sub-word line; and a second internal driver circuit having a first input coupled to said respective global word line, a second input coupled to said output of said inverting circuit, and an output coupled to a second sub-word line.

Claim 11

The memory circuit of claim 8 wherein said first internal driver circuit comprises said first transistor and further comprises: a second transistor having a first source/drain terminal coupled to said respective global word line, a second source/drain terminal coupled to a boost node, and a gate terminal; and a third transistor having a first source/drain terminal coupled to said first sub-word line, a second source/drain terminal coupled to a select line, and a gate terminal coupled to said boost node; wherein, said first transistor has a first source/drain terminal coupled to said first sub-word line, a second source/drain terminal coupled to a reference level, and a gate terminal coupled to said output of inverting circuit.

Claim 12

The memory circuit of claim 1 wherein each sub-word line driver receives one global word line and drives at least two sub-word lines, and wherein said global word line is of metallic material and said at least two sub-word lines are of polysilicon material.

Claim 13

The memory circuit of claim 10 wherein said at least two sub-word lines extend on both sides of each sub-word line driver along a longitudinal axis of said memory array.

Claim 14

In a memory circuit having an array of memory cells, a sub-word line driver comprising: a first internal driver circuit having a first input coupled to a global word line made of metal, said global word line substantially traversing along an entire row in the array of memory cells, said first internal driver further having an output coupled to a first sub-word line made of polysilicon, said first sub-word line being coupled to a first subset of memory cells along one row of the array; a second internal driver circuit having a first input coupled to said global word line, and an output coupled to a second sub-word line made of polysilicon, said second sub-word line being coupled to a second subset of memory cells along one row of the array; and an inverting circuit having an input coupled to said global word line and an output coupled to a second input of said first internal driver circuit and a second input of said second internal driver circuit.

Claim 15

In a memory circuit having an array of memory cells, a sub-word line driver comprising: a first internal driver circuit having a first input coupled to a global word line made of metal, said global word line substantially traversing along an entire row in the array of memory cells, said first internal driver further having an output coupled to a first sub-word line made of polysilicon, said first sub-word line being coupled to a first subset of memory cells along one row of the array; a second internal driver circuit having a first input coupled to said global word line, and an output coupled to a second sub-word line made of polysilicon, said second sub-word line being coupled to a second subset of memory cells along one row of the array; and an inverting circuit having an input coupled to said global word line and an output coupled to a second input of said first internal driver circuit and a second input of said second internal driver circuit.

Claim 16

The memory circuit of claim 12 wherein each of said first and second internal driver circuits comprises: a first transistor coupled between a boost node and a respective sub-word line, said first transistor having a gate terminal being driven by a signal on said global word line; and a second transistor coupled between said respective sub-word line and a reference node, said second transistor having a gate terminal being driven by said output of said inverting circuit.

Claim 17

The memory circuit of claim 13 wherein said inverting circuit comprises: an n-channel pull-down transistor coupled between said output of said inverting circuit and a source of low potential, said n-channel pull-down transistor having a gate terminal coupled to said global word line; and an n-channel pull-up transistor coupled between said output of said inverting circuit and a first node, said n-channel pull-up transistor having a gate terminal coupled to receive a control signal.