Patent EP0184016A1 successfully refreshed from Google Patents.
US5872058A
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High aspect ratio gapfill process by using HDP
Assignee: Novellus Systems Inc
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Filing: 1997-06-17
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Granted: 1999-02-16
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Expires: 2017-06-17
Abstract
Abstract A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resulting in reduced sidewall deposition from the sputtered material. Consequently, gaps with aspect ratios of 3.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.
Inventors
- 👤 Patrick A. Van Cleemput
- 👤 Thomas W. Mountsier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/04; C23C16/045; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/00; H10W20/01; H10W20/071; H10W20/098; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
57 words
A process for filling gaps during integrated circuit production, comprising the steps of: providing a gas mixture comprised of silicon-containing, oxygen-containing, and inert components, wherein said inert components comprise no more than 13% total concentration of said gas mixture; and depositing a film over said gaps by using said gas mixture for simultaneous CVD and sputter etching.
Claim 2
Dependent Claim
57 words
A process for filling gaps during integrated circuit production, comprising the steps of: providing a gas mixture comprised of silicon-containing, oxygen-containing, and inert components, wherein said inert components comprise no more than 13% total concentration of said gas mixture; and depositing a film over said gaps by using said gas mixture for simultaneous CVD and sputter etching.
Claim 3
Dependent Claim
11 words
The process of claim 1, wherein said silicon-containing component is silane.
Claim 4
Dependent Claim
13 words
The process of claim 1, wherein said oxygen-containing component is O 2 .
Claim 5
Dependent Claim
20 words
The process of claim 1, wherein said inert component is selected from the group consisting of argon, helium and hydrogen.
Claim 6
Dependent Claim
18 words
The process of claim 1, wherein said gas mixture is at a pressure between 1 and 3 mTorr.
Claim 7
Dependent Claim
16 words
The process of claim 5, wherein said gas mixture is at a pressure of 2 mTorr.
Claim 8
Dependent Claim
18 words
The process of claim 2, wherein said silane is at a flow rate of 80 to 250 sccm.
Claim 9
Dependent Claim
19 words
The process of claim 3, wherein said O 2 is at a flow rate of 120 to 250 sccm.
Claim 10
Dependent Claim
20 words
The process of claim 4, wherein said inert component is argon at a flow rate of 0 to 50 sccm.
Claim 11
Dependent Claim
48 words
A process for filling gaps during integrated circuit production, comprising the step of: depositing a film over said gaps by HDP deposition using a gas mixture comprised of silicon-containing, oxygen-containing, and inert components, wherein said inert components comprise no more than 13% total concentration of said gas mixture.
Claim 12
Dependent Claim
48 words
A process for filling gaps during integrated circuit production, comprising the step of: depositing a film over said gaps by HDP deposition using a gas mixture comprised of silicon-containing, oxygen-containing, and inert components, wherein said inert components comprise no more than 13% total concentration of said gas mixture.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |