US5866482A
Expired / Lapsed
US
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Method for masking conducting layers to abate charge damage during plasma etching
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-09-27
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Granted: 1999-02-02
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Expires: 2016-09-27
Abstract
Abstract A method for forming within an integrated circuit a patterned conductor layer from a blanket conductor layer through a plasma etch method, where there is simultaneously avoided plasma induced electrical discharge damage to an integrated circuit structure formed beneath the blanket conductor layer. There is first provided a substrate. There is then formed over the substrate an integrated circuit structure. There is then formed over the substrate and the integrated circuit structure a blanket conductor layer. There is then formed upon the blanket conductor layer a patterned photoresist layer, where the patterned photoresist layer simultaneously: (1) leaves unexposed a first portion of the blanket conductor layer sufficiently large, and (2) leaves exposed a second portion of the blanket conductor layer sufficiently small, to limit plasma induced electrical discharge damage to the integrated circuit structure when the blanket conductor layer is patterned to form a patterned conductor layer through a plasma etch method. Finally, there is etched through the plasma etch method while employing the patterned photoresist layer as an etch mask layer the blanket conductor layer to form the patterned conductor layer.
Inventors
- 👤 Jian-Huei Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:51
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; Y; Y10; Y10S; Y10S438/00; Y10S438/926
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
145 words
A method for forming within an integrated circuit a patterned conductor layer from a blanket conductor layer through a plasma etch method comprising: providing a substrate; forming over the substrate an integrated circuit structure; forming over the substrate and the integrated circuit structure a blanket conductor layer; forming upon the blanket conductor layer a patterned photoresist layer, the patterned photoresist layer simultaneously leaving unexposed a first portion of the blanket conductor layer sufficiently large and leaving exposed a second portion of the blanket conductor layer sufficiently small to avoid plasma induced electrical discharge damage to the integrated circuit structure when the blanket conductor layer is patterned to form a patterned conductor layer through a plasma etch method; and etching through the plasma etch method while employing the patterned photoresist layer as an etch mask layer the blanket conductor layer to form the patterned conductor layer.
Claim 2
Independent Claim
145 words
A method for forming within an integrated circuit a patterned conductor layer from a blanket conductor layer through a plasma etch method comprising: providing a substrate; forming over the substrate an integrated circuit structure; forming over the substrate and the integrated circuit structure a blanket conductor layer; forming upon the blanket conductor layer a patterned photoresist layer, the patterned photoresist layer simultaneously leaving unexposed a first portion of the blanket conductor layer sufficiently large and leaving exposed a second portion of the blanket conductor layer sufficiently small to avoid plasma induced electrical discharge damage to the integrated circuit structure when the blanket conductor layer is patterned to form a patterned conductor layer through a plasma etch method; and etching through the plasma etch method while employing the patterned photoresist layer as an etch mask layer the blanket conductor layer to form the patterned conductor layer.
Claim 3
Dependent Claim
36 words
The method of claim 1 wherein when the blanket conductor layer is etched to form the patterned conductor layer there is formed a dummy patterned conductor layer from the first portion of the blanket conductor layer.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein the integrated circuit structure is formed from a structure chosen from the group of structures consisting of integrated circuit layers and integrated circuit devices.
Claim 5
Dependent Claim
28 words
The method of claim 3 wherein the integrated circuit layers are chosen from the group of integrated circuit layers consisting of dielectric layers, semiconductor layers and photoactive layers.
Claim 6
Dependent Claim
19 words
The method of claim 4 wherein the integrated circuit layers are from about 20 to about 10000 angstroms thick.
Claim 7
Dependent Claim
33 words
The method of claim 1 wherein the blanket conductor layer is formed from a conductor material chosen from the group of conductor materials consisting of metals, metal alloys, highly doped polysilicon and polycides.
Claim 8
Dependent Claim
19 words
The method of claim 6 wherein the blanket conductor layer is from about 1000 to about 10000 angstroms thick.
Claim 9
Dependent Claim
49 words
The method of claim 1 wherein the plasma etch method is chosen from the group of plasma etch methods consisting of microwave plasma etch methods, reactive ion etch (RIE) plasma etch methods, magnetically enhanced reactive ion etch (MERIE) plasma etch methods and electron cyclotron resonance (ECR) plasma etch methods.
Claim 10
Dependent Claim
152 words
A plasma etch method for forming for use within a field effect transistor within an integrated circuit a gate electrode comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a gate dielectric layer; forming upon the gate dielectric layer a blanket gate electrode material layer; forming upon the blanket gate electrode material layer a patterned photoresist layer, the patterned photoresist layer simultaneously leaving unexposed a first portion of the blanket gate electrode material layer sufficiently large and leaving exposed a second portion of the blanket gate electrode material layer sufficiently small to avoid plasma induced electrical discharge damage to the gate dielectric layer when the blanket gate electrode material layer is patterned to form a gate electrode through a plasma etch method; and etching through the plasma etch method while employing the patterned photoresist layer as an etch mask layer the blanket gate electrode material layer to form the gate electrode.
Claim 11
Dependent Claim
152 words
A plasma etch method for forming for use within a field effect transistor within an integrated circuit a gate electrode comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a gate dielectric layer; forming upon the gate dielectric layer a blanket gate electrode material layer; forming upon the blanket gate electrode material layer a patterned photoresist layer, the patterned photoresist layer simultaneously leaving unexposed a first portion of the blanket gate electrode material layer sufficiently large and leaving exposed a second portion of the blanket gate electrode material layer sufficiently small to avoid plasma induced electrical discharge damage to the gate dielectric layer when the blanket gate electrode material layer is patterned to form a gate electrode through a plasma etch method; and etching through the plasma etch method while employing the patterned photoresist layer as an etch mask layer the blanket gate electrode material layer to form the gate electrode.
Claim 12
Dependent Claim
42 words
The method of claim 9 wherein when the blanket gate electrode material layer is etched to form the gate electrode there is simultaneously formed a dummy patterned gate electrode material layer from the first portion of the blanket gate electrode material layer.
Claim 13
Dependent Claim
29 words
The method of claim 9 wherein the gate dielectric layer is formed from a silicon oxide dielectric material at a thickness of from about 20 to about 200 angstroms.
Claim 14
Dependent Claim
37 words
The method of claim 9 wherein the blanket gate electrode material layer is formed from a gate electrode material chosen from the group of gate electrode materials consisting of highly doped polysilicon and polycide gate electrode materials.
Claim 15
Dependent Claim
21 words
The method of claim 12 wherein the blanket gate electrode material layer is from about 1000 to about 4000 angstroms thick.
Claim 16
Dependent Claim
49 words
The method of claim 9 wherein the plasma etch method is chosen from the group of plasma etch methods consisting of microwave plasma etch methods, reactive ion etch (RIE) plasma etch methods, magnetically enhanced reactive ion etch (MERIE) plasma etch methods and electron cyclotron resonance (ECR) plasma etch methods.
References Cited (Backward Citations)
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