US5770518A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing without undercutting conductive lines
Assignee: GlobalFoundries Inc
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Filing: 1996-10-10
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Granted: 1998-06-23
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Expires: 2016-10-10
Abstract
Abstract Undercutting of conductive lines in a dense array on a dielectric layer containing an open field is prevented by providing one or more non-functional components, such as one or more non-functional conductive lines, in the dielectric layer under the dense array of conductive lines.
Inventors
- 👤 Lewis Shen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:13
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10W20/01; H10W20/031; Y; Y10; Y10S; Y10S438/00; Y10S438/926
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
158 words
A method of manufacturing a semiconductor device comprising: forming a dielectric layer containing functional circuit components bordered by one or more selectively placed non-functional circuit components; forming a layer of conductive material on the dielectric layer extending over the functional and over the one or more non-functional circuit components; forming a mask on the conductive layer, which mask contains a pattern defining lines to constitute a dense array of upper conductive lines extending over the functional and one or more non-functional circuit components; and etching the conductive layer through the mask to form the dense array of upper conductive lines on the dielectric layer extending over the functional circuit components and over the one or more selectively placed non-functional circuit components, wherein all of the non-functional circuit components included in the device are disposed only directly under portions of the dense array of conductive lines, and a distance between upper conductive lines is less than about 1.0 micron.
Claim 2
Independent Claim
158 words
A method of manufacturing a semiconductor device comprising: forming a dielectric layer containing functional circuit components bordered by one or more selectively placed non-functional circuit components; forming a layer of conductive material on the dielectric layer extending over the functional and over the one or more non-functional circuit components; forming a mask on the conductive layer, which mask contains a pattern defining lines to constitute a dense array of upper conductive lines extending over the functional and one or more non-functional circuit components; and etching the conductive layer through the mask to form the dense array of upper conductive lines on the dielectric layer extending over the functional circuit components and over the one or more selectively placed non-functional circuit components, wherein all of the non-functional circuit components included in the device are disposed only directly under portions of the dense array of conductive lines, and a distance between upper conductive lines is less than about 1.0 micron.
Claim 3
Dependent Claim
22 words
The method according to claim 1, wherein the functional circuit components and one or more non-functional circuit components comprise lower conductive lines.
Claim 4
Dependent Claim
21 words
The method according to claim 2, wherein the non-functional lower conductive lines extend for a distance of at least 2.0 microns.
Claim 5
Dependent Claim
39 words
The method according to claim 2, further comprising forming an electrical circuit with a portion of the upper conductive lines to form a dense array of functional upper conductive lines leaving one or more bordering non-functional upper conductive lines.
Claim 6
Dependent Claim
20 words
The method according to claim 4, wherein the non-functional upper conductive lines extend for a distance of about 2.0 microns.
Claim 7
Dependent Claim
18 words
The method according to claim 1, wherein the distance between the upper conductive lines is essentially the same.
Claim 8
Dependent Claim
18 words
The method according to claim 6, wherein the distance between the lower conductive lines is essentially the same.
Claim 9
Dependent Claim
20 words
The method according to claim 7, wherein the distance between the lower conductive lines is less than about 1.0 micron.
Claim 10
Dependent Claim
20 words
The method according to claim 8, wherein the distance between the lower conductive lines is less than about 0.7 microns.
Claim 11
Dependent Claim
19 words
The method according to claim 1, wherein the distance between upper conductive lines is less than about 0.7 microns.
Claim 12
Dependent Claim
13 words
The method according to claim 1, wherein the dielectric layer comprises silicon dioxide.
Claim 13
Dependent Claim
17 words
The method according to claim 11, comprising depositing an electrically conductive barrier layer on the dielectric layer.
Claim 14
Dependent Claim
16 words
The method according to claim 12, wherein the barrier layer comprises titanium, titanium nitride or titanium-tungsten.
Claim 15
Dependent Claim
17 words
The method according to claim 1, comprising depositing an electrically conductive barrier layer on the dielectric layer.
Claim 16
Dependent Claim
16 words
The method according to claim 14, wherein the barrier layer comprises titanium, titanium nitride or titanium-tungsten.
Claim 17
Independent Claim
259 words
A method of manufacturing a semiconductor device comprising: forming a first layer of conductive material on a substrate; forming a first mask on the first conductive layer, which first mask contains a pattern defining lines to constitute a dense array of functional lower conductive lines bordered by one or more non-functional lower conductive lines; etching the first conductive layer through the mask to form a plurality of lower conductive lines; and forming an electrical circuit with a portion of the lower conductive lines to form the dense array of functional lower conductive lines leaving one or more bordering non-functional lower conductive lines; depositing a layer of dielectric material; planarizing the layer of dielectric material; forming a second layer of conductive material on the dielectric layer extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; forming a second mask on the second conductive layer, which second mask contains a pattern defining lines to constitute a dense array of upper conductive lines extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; and etching the second conductive layer through the mask to form the dense array of upper conductive lines extending directly over the dense array of functional lower conductive lines and extending directly over the one or more bordering non-functional lower conductive lines, wherein all of the non-functional conductive lines included in the device are disposed only directly under portions of the dense array of conductive lines.
Claim 18
Independent Claim
259 words
A method of manufacturing a semiconductor device comprising: forming a first layer of conductive material on a substrate; forming a first mask on the first conductive layer, which first mask contains a pattern defining lines to constitute a dense array of functional lower conductive lines bordered by one or more non-functional lower conductive lines; etching the first conductive layer through the mask to form a plurality of lower conductive lines; and forming an electrical circuit with a portion of the lower conductive lines to form the dense array of functional lower conductive lines leaving one or more bordering non-functional lower conductive lines; depositing a layer of dielectric material; planarizing the layer of dielectric material; forming a second layer of conductive material on the dielectric layer extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; forming a second mask on the second conductive layer, which second mask contains a pattern defining lines to constitute a dense array of upper conductive lines extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; and etching the second conductive layer through the mask to form the dense array of upper conductive lines extending directly over the dense array of functional lower conductive lines and extending directly over the one or more bordering non-functional lower conductive lines, wherein all of the non-functional conductive lines included in the device are disposed only directly under portions of the dense array of conductive lines.
Claim 19
Dependent Claim
51 words
The method according to claim 16, further comprising forming an electric circuit with a portion of the upper conductive lines to form a dense array of functional upper conductive lines extending over the functional and one or more non-functional lower conductive lines leaving one or more bordering non-functional upper conductive lines.
Claim 20
Dependent Claim
70 words
The method according to claim 16, comprising forming the first mask on the first conductive layer, which first mask contains a pattern defining lines to constitute a dense array of functional lower conductive lines bordered by one non-functional lower conductive line, forming an electrical circuit with a portion of the lower conductive lines to form the dense array of functional lower conductive lines leaving one bordering non-functional lower conductive line.
Claim 21
Independent Claim
269 words
A method of manufacturing a semiconductor device comprising: forming a first layer of conductive material on a substrate; forming a first mask on the first conductive layer, which first mask contains a pattern defining lines to constitute a dense array of functional lower conductive lines bordered by one or more non-functional lower conductive lines; etching the first conductive layer through the mask to form a plurality of lower conductive lines; and forming an electrical circuit with a portion of the lower conductive lines to form the dense array of functional lower conductive lines leaving one or more bordering non-functional lower conductive lines; depositing a layer of dielectric material; planarizing the layer of dielectric material; forming a second layer of conductive material on the dielectric layer extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; forming a second mask on the second conductive layer, which second mask contains a pattern defining lines to constitute a dense array of upper conductive lines extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; and etching the second conductive layer through the mask to form the dense array of upper conductive lines extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines, wherein all of the non-functional conductive lines included in the device are disposed only directly under portions of the dense array of conductive lines, and a distance between upper conductive lines is less than about 1.0 micron.
Claim 22
Independent Claim
269 words
A method of manufacturing a semiconductor device comprising: forming a first layer of conductive material on a substrate; forming a first mask on the first conductive layer, which first mask contains a pattern defining lines to constitute a dense array of functional lower conductive lines bordered by one or more non-functional lower conductive lines; etching the first conductive layer through the mask to form a plurality of lower conductive lines; and forming an electrical circuit with a portion of the lower conductive lines to form the dense array of functional lower conductive lines leaving one or more bordering non-functional lower conductive lines; depositing a layer of dielectric material; planarizing the layer of dielectric material; forming a second layer of conductive material on the dielectric layer extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; forming a second mask on the second conductive layer, which second mask contains a pattern defining lines to constitute a dense array of upper conductive lines extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines; and etching the second conductive layer through the mask to form the dense array of upper conductive lines extending over the dense array of functional lower conductive lines and over the one or more bordering non-functional lower conductive lines, wherein all of the non-functional conductive lines included in the device are disposed only directly under portions of the dense array of conductive lines, and a distance between upper conductive lines is less than about 1.0 micron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-22 | 2001-12-22 | 2002-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-22 | 2005-12-22 | 2006-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-22 | 2009-12-22 | 2010-06-23 | $7700.00 | Window Closed / Lapsed |