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Patent US5864149A successfully refreshed from Google Patents.
US5864149A
Expired / Lapsed
US
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Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure
Assignee: Innolux Corp
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Filing: 1997-04-17
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Granted: 1999-01-26
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Expires: 2017-04-17
Abstract
Abstract A multi-layer structure of source/drain electrodes and an amorphous silicon layer in a forward staggered thin film transistor. Source/drain electrodes are selectively provided on an insulator. Each of the source/drain electrodes comprises an undoped transparent conductive film on the insulator and an impurity doped transparent conductive film extending over the undoped transparent conductive film. An amorphous silicon active layer extends over the source/drain electrodes and a top surface of the insulator so that the amorphous silicon active layer over the source/drain electrodes has an impurity diffused interface in contact with the impurity doped transparent conductive film to form ohmic contacts between the impurity doped transparent conductive film and the amorphous silicon active layer. The amorphous silicon active layer in contact with the top surface of the insulator between the source/drain electrodes is free of impurities.
Inventors
- 👤 Shuki Yamamori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; Y; Y10; Y10S; Y10S148/00; Y10S148/053
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
154 words
A multi-layer structure of source/drain electrodes and an amorphous silicon layer in a forward staggered thin film transistor, said multi-layer structure comprising: source/drain electrodes selectively provided on an insulator, each of said source/drain electrodes comprising an undoped transparent conductive film on said insulator and an impurity doped transparent conductive film on said undoped transparent conductive film; and an amorphous silicon active layer extending over said source/drain electrodes and a top surface of said insulator so that said amorphous silicon active layer over said source/drain electrodes has an impurity diffused interface in contact with said impurity doped transparent conductive film to form ohmic contacts between said impurity doped transparent conductive film and said amorphous silicon active layer, said impurity diffused interface not contacting said top surface of said insulator, whilst said amorphous silicon active layer in contact with said top surface of said insulator between said source/drain electrodes is free of any impurity introduced region.
Claim 2
Dependent Claim
154 words
A multi-layer structure of source/drain electrodes and an amorphous silicon layer in a forward staggered thin film transistor, said multi-layer structure comprising: source/drain electrodes selectively provided on an insulator, each of said source/drain electrodes comprising an undoped transparent conductive film on said insulator and an impurity doped transparent conductive film on said undoped transparent conductive film; and an amorphous silicon active layer extending over said source/drain electrodes and a top surface of said insulator so that said amorphous silicon active layer over said source/drain electrodes has an impurity diffused interface in contact with said impurity doped transparent conductive film to form ohmic contacts between said impurity doped transparent conductive film and said amorphous silicon active layer, said impurity diffused interface not contacting said top surface of said insulator, whilst said amorphous silicon active layer in contact with said top surface of said insulator between said source/drain electrodes is free of any impurity introduced region.
Claim 3
Dependent Claim
20 words
The multi-layer structure as claimed in claim 1, wherein said undoped transparent conductive film comprises an indium tin oxide film.
Claim 4
Dependent Claim
19 words
The multi-layer structure as claimed in claim 1, wherein said undoped transparent conductive film comprises an indium oxide film.
Claim 5
Dependent Claim
19 words
The multi-layer structure as claimed in claim 1, wherein said undoped transparent conductive film comprises a tin oxide film.
Claim 6
Dependent Claim
23 words
The multi-layer structure as claimed in claim 1, wherein said impurity doped transparent conductive film comprises an impurity doped indium tin oxide film.
Claim 7
Dependent Claim
22 words
The multi-layer structure as claimed in claim 1, wherein said impurity doped transparent conductive film comprises an impurity doped indium oxide film.
Claim 8
Dependent Claim
22 words
The multi-layer structure as claimed in claim 1, wherein said impurity doped transparent conductive film comprises an Impurity doped tin oxide film.
Claim 9
Dependent Claim
40 words
The multi-layer structure as claimed in claim 1, wherein said impurity doped transparent conductive film has a thickness of approximately 10% or less of a total thickness of said undoped transparent conductive film and said impurity doped transparent conductive film.
Claim 10
Dependent Claim
19 words
The multi-layer structure as claimed in claim 1, wherein said insulator comprises an inter-layer insulator made of silicon oxide.
Claim 11
Dependent Claim
15 words
The multi-layer structure as claimed in claim 1, wherein said insulator comprises an insulation substrate.
Claim 12
Dependent Claim
162 words
A forward staggered thin film transistor comprising: an insulator; source/drain electrodes selectively provided on an insulator, each of said source/drain electrodes comprising an undoped transparent conductive film on said insulator and an impurity doped transparent conductive film on said undoped transparent conductive film; an amorphous silicon active layer extending over said source/drain electrodes and a top surface of said insulator so that said amorphous silicon active layer over said source/drain electrodes has an impurity diffused interface in contact with said impurity doped transparent conductive film to form an ohmic contact between said impurity doped transparent conductive film and said amorphous silicon active layer, said impurity diffused interface not contacting said top surface of said insulator whilst said amorphous silicon active layer in contact with said top surface of said insulator between said source/drain electrodes is free of any impurity introduced region; a gate insulation film extending over said amorphous silicon active layer; and a gate electrode provided on said gate insulation film.
Claim 13
Dependent Claim
162 words
A forward staggered thin film transistor comprising: an insulator; source/drain electrodes selectively provided on an insulator, each of said source/drain electrodes comprising an undoped transparent conductive film on said insulator and an impurity doped transparent conductive film on said undoped transparent conductive film; an amorphous silicon active layer extending over said source/drain electrodes and a top surface of said insulator so that said amorphous silicon active layer over said source/drain electrodes has an impurity diffused interface in contact with said impurity doped transparent conductive film to form an ohmic contact between said impurity doped transparent conductive film and said amorphous silicon active layer, said impurity diffused interface not contacting said top surface of said insulator whilst said amorphous silicon active layer in contact with said top surface of said insulator between said source/drain electrodes is free of any impurity introduced region; a gate insulation film extending over said amorphous silicon active layer; and a gate electrode provided on said gate insulation film.
Claim 14
Dependent Claim
23 words
The forward staggered thin film transistor as claimed in claim 11, wherein said undoped transparent conductive film comprises an indium tin oxide film.
Claim 15
Dependent Claim
22 words
The forward staggered thin film transistor as claimed in claim 11, wherein said undoped transparent conductive film comprises an indium oxide film.
Claim 16
Dependent Claim
22 words
The forward staggered thin film transistor as claimed in claim 11, wherein said undoped transparent conductive film comprises a tin oxide film.
Claim 17
Dependent Claim
26 words
The forward staggered thin film transistor as claimed in claim 11, wherein said impurity doped transparent conductive film comprises an impurity doped indium tin oxide film.
Claim 18
Dependent Claim
25 words
The forward staggered thin film transistor as claimed in claim 11, wherein said impurity doped transparent conductive film comprises an impurity doped indium oxide film.
Claim 19
Dependent Claim
25 words
The forward staggered thin film transistor as claimed in claim 11, wherein said impurity doped transparent conductive film comprises an impurity doped tin oxide film.
Claim 20
Dependent Claim
43 words
The forward staggered thin film transistor as claimed in claim 11, wherein said impurity doped transparent conductive film has a thickness of approximately 10% or less of a total thickness of said undoped transparent conductive film and said impurity doped transparent conductive film.
Claim 21
Dependent Claim
22 words
The forward staggered thin film transistor as claimed in claim 11, wherein said insulator comprises an inter-layer insulator made of silicon oxide.
Claim 22
Dependent Claim
18 words
The forward staggered thin film transistor as claimed in claim 11, wherein said insulator comprises an insulation substrate.
Claim 23
Dependent Claim
219 words
A forward staggered thin film transistor comprising: a glass substrate; an optical shielding metal film selectively provided on a first predetermined region of a top surface of said glass substrate; an inter-layer insulator extending over said optical shielding metal film and said top surface of said glass substrate; source/drain electrodes selectively provided on second predetermined regions of a top surface of said interlayer insulator, each of said source/drain electrodes comprising an undoped indium tin oxide film on said inter-layer insulator and an impurity doped indium tin oxide film on said undoped indium tin oxide film; an amorphous silicon active layer extending over said source/drain electrodes and said top surface of said inter-layer insulator so that said amorphous silicon active layer over said source/drain electrodes has an impurity diffused interface in contact with said impurity doped indium tin oxide film to form an ohmic contact between said impurity doped indium tin oxide film and said amorphous silicon active layer, said impurity diffused interface not contacting said top surface of said interlayer insulator, whilst said amorphous silicon active layer in contact with said top surface of said inter-layer insulator between said source/drain electrodes is free of any impurity introduced region; a gate insulation film extending over said amorphous silicon active layer; and a gate electrode provided on said gate insulation film.
Claim 24
Dependent Claim
219 words
A forward staggered thin film transistor comprising: a glass substrate; an optical shielding metal film selectively provided on a first predetermined region of a top surface of said glass substrate; an inter-layer insulator extending over said optical shielding metal film and said top surface of said glass substrate; source/drain electrodes selectively provided on second predetermined regions of a top surface of said interlayer insulator, each of said source/drain electrodes comprising an undoped indium tin oxide film on said inter-layer insulator and an impurity doped indium tin oxide film on said undoped indium tin oxide film; an amorphous silicon active layer extending over said source/drain electrodes and said top surface of said inter-layer insulator so that said amorphous silicon active layer over said source/drain electrodes has an impurity diffused interface in contact with said impurity doped indium tin oxide film to form an ohmic contact between said impurity doped indium tin oxide film and said amorphous silicon active layer, said impurity diffused interface not contacting said top surface of said interlayer insulator, whilst said amorphous silicon active layer in contact with said top surface of said inter-layer insulator between said source/drain electrodes is free of any impurity introduced region; a gate insulation film extending over said amorphous silicon active layer; and a gate electrode provided on said gate insulation film.
Claim 25
Dependent Claim
46 words
The forward staggered thin film transistor as claimed in claim 21, wherein said impurity doped indium tin oxide film has a thickness of approximately 10% or less of a total thickness of said undoped indium tin oxide film and said impurity doped indium tin oxide film.
References Cited (Backward Citations)
US4733284A
Cited
US4864376A
Cited
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