US5861677A
Expired / Lapsed
US
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Low RC interconnection
Assignee: GlobalFoundries Inc
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Filing: 1997-07-10
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Granted: 1999-01-19
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Expires: 2017-07-10
Abstract
Abstract A low RC delay interconnection pattern is formed with a low resistivity metal, such as copper, and a low dielectric constant material, such as organic polymers. An intermediate bonding layer is formed between the low resistivity metal and low dielectric constant material employing an adhesion promoter, such as a silane-based adhesion promoter. The adhesion promoter can be applied between the metal and dielectric layers or incorporated in the dielectric layer.
Inventors
- 👤 Lu You
- 👤 Robin W. Cheung
- 👤 Simon S. Chan
- 👤 Richard J. Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:32
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/127; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/495
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
73 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer consists essentially of an adhesion promoter, the reaction product of the metal and the adhesion promoter and the reaction product of the adhesion promoter and the dielectric material, and the dielectric material is selected from the group consisting of teflons, parylenes, and silesesquioxanes.
Claim 2
Dependent Claim
73 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer consists essentially of an adhesion promoter, the reaction product of the metal and the adhesion promoter and the reaction product of the adhesion promoter and the dielectric material, and the dielectric material is selected from the group consisting of teflons, parylenes, and silesesquioxanes.
Claim 3
Dependent Claim
32 words
The semiconductor device according to claim 1, wherein the metal layer comprises a low resistivity metal selected from the group consisting of copper, copper-based alloys, gold, gold-based alloys, silver and silver-based alloys.
Claim 4
Dependent Claim
16 words
The semiconductor device according to claim 2, wherein the metal is copper or a copper-based alloy.
Claim 5
Dependent Claim
15 words
The semiconductor device according to claim 1, wherein the metal layer comprises a conductive pattern.
Claim 6
Dependent Claim
66 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer comprises the reaction product of an adhesion promoter and a metal, and the dielectric material is blended with the adhesion promoter, and the dielectric material is selected from the group consisting of teflons, parylenes, and silesesquioxanes.
Claim 7
Dependent Claim
66 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer comprises the reaction product of an adhesion promoter and a metal, and the dielectric material is blended with the adhesion promoter, and the dielectric material is selected from the group consisting of teflons, parylenes, and silesesquioxanes.
Claim 8
Dependent Claim
72 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer consists essentially of an adhesion promoter, the reaction product of the metal and the adhesion promoter and the reaction product of the adhesion promoter and the dielectric material, and the adhesion promoter is selected from the group consisting of 3-aminopropyltriethoxysilane and 3-methacryloxypropyltrimethoxysilane.
Claim 9
Dependent Claim
72 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer consists essentially of an adhesion promoter, the reaction product of the metal and the adhesion promoter and the reaction product of the adhesion promoter and the dielectric material, and the adhesion promoter is selected from the group consisting of 3-aminopropyltriethoxysilane and 3-methacryloxypropyltrimethoxysilane.
Claim 10
Dependent Claim
32 words
The semiconductor device according to claim 6, wherein the metal layer comprises a low resistivity metal selected from the group consisting of copper, copper-based alloys, gold, gold-based alloys, silver and silver-based alloys.
Claim 11
Dependent Claim
16 words
The semiconductor device according to claim 7, wherein the metal is copper or a copper-based alloy.
Claim 12
Dependent Claim
64 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer comprises the reaction product of an adhesion promoter and a metal, and the dielectric material is blended with the adhesion promoter, which adhesion promoter is selected from the group consisting of 3-aminopropyltriethoxysilane and 3-methacryloxypropyltrimethoxysilane.
Claim 13
Dependent Claim
64 words
A semiconductor device comprising: a layer of dielectric material; a low RC metal interconnect pattern; and an intermediate layer bonding the metal and dielectric material; wherein the intermediate bonding layer comprises the reaction product of an adhesion promoter and a metal, and the dielectric material is blended with the adhesion promoter, which adhesion promoter is selected from the group consisting of 3-aminopropyltriethoxysilane and 3-methacryloxypropyltrimethoxysilane.
Claim 14
Dependent Claim
15 words
The semiconductor device according to claim 6, where the metal layer comprises a conductive pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-18 | 2002-07-20 | 2003-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-18 | 2006-07-20 | 2007-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-18 | 2010-07-20 | 2011-01-19 | $7700.00 | Window Closed / Lapsed |