Patent US5861346A successfully refreshed from Google Patents.
US5861346A
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Process for forming silicon carbide films and microcomponents
Assignee: University of California
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Filing: 1995-07-27
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Granted: 1999-01-19
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Expires: 2015-07-27
Abstract
Abstract Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C 60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C 60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C 60 on silicon dioxide at surface temperatures less than 1250 K.
Inventors
- 👤 Alex V. Hamza
- 👤 Mehdi Balooch
- 👤 Mehran Moalem
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
38 words
A process for forming silicon carbide films and microcomponents on a silicon substrate, comprising: forming a silicon carbide layer on a silicon substrate surface by heating the silicon surface in the presence of C 60 and silicon vapor.
Claim 2
Dependent Claim
38 words
A process for forming silicon carbide films and microcomponents on a silicon substrate, comprising: forming a silicon carbide layer on a silicon substrate surface by heating the silicon surface in the presence of C 60 and silicon vapor.
Claim 3
Dependent Claim
26 words
A process as recited in claim 1, wherein forming the silicon carbide layer is carried out at a temperature between about 900 K and 1700 K.
Claim 4
Dependent Claim
18 words
A process as recited in claim 1, wherein forming the silicon carbide layer is carried out under vacuum.
Claim 5
Dependent Claim
23 words
A process as recited in claim 1, wherein forming the silicon carbide layer is carried out in the presence of C 60 vapor.
Claim 6
Dependent Claim
26 words
A process as recited in claim 1, wherein forming the silicon carbide layer is carried out in the presence of C 60 in a solid form.
Claim 7
Dependent Claim
20 words
A process as recited in claim 1, wherein the silicon carbide layer is greater than about one micron in thickness.
Claim 8
Dependent Claim
16 words
A process as recited in claim 1, wherein heating the silicon surface is carried out radiatively.
Claim 9
Dependent Claim
16 words
A process as recited in claim 1, wherein heating the silicon surface is carried out resistively.
Claim 10
Dependent Claim
15 words
A process as recited in claim 1, wherein the silicon carbide layer is stoichiometric (SiC).
Claim 11
Dependent Claim
38 words
A process as recited in claim 1, further comprising: forming a C 60 -covered silicon surface by exposing the silicon substrate surface to C 60 before forming the silicon carbide layer on the C 60 -covered silicon surface.
Claim 12
Dependent Claim
26 words
A process as recited in claim 10, wherein forming the C 60 -covered silicon surface is carried out at a temperature less than about 900 K.
Claim 13
Dependent Claim
17 words
A process as recited in claim 10, wherein the silicon carbide layer and silicon substrate are epitaxial.
Claim 14
Dependent Claim
25 words
A process as recited in claim 1, wherein the silicon substrate is selected from the group consisting of Si (100) wafers and Si (111) wafers.
Claim 15
Dependent Claim
56 words
A process for selectively forming silicon carbide films and microcomponents on a silicon substrate, comprising: forming a silicon carbide layer on a patterned silicon and silicon oxide substrate surface by heating the silicon-silicon oxide surface in the presence of C 60 ; removing the silicon dioxide from the substrate to form a patterned silicon carbide layer.
Claim 16
Dependent Claim
56 words
A process for selectively forming silicon carbide films and microcomponents on a silicon substrate, comprising: forming a silicon carbide layer on a patterned silicon and silicon oxide substrate surface by heating the silicon-silicon oxide surface in the presence of C 60 ; removing the silicon dioxide from the substrate to form a patterned silicon carbide layer.
Claim 17
Dependent Claim
26 words
A process as recited in claim 14, wherein forming the silicon carbide layer is carried out at a temperature between about 900 K and 1250 K.
Claim 18
Dependent Claim
38 words
A process as recited in claim 14, further comprising: forming a C 60 -covered silicon surface by exposing the silicon-silicon oxide surface to C 60 before forming the silicon carbide layer on the C 60 -covered silicon surface.
Claim 19
Dependent Claim
26 words
A process as recited in claim 16, wherein forming the C 60 -covered silicon surface is carried out at a temperature less than about 900 K.
Claim 20
Dependent Claim
47 words
A process for forming carbide films and microcomponents on a metal substrate, comprising: forming a carbide layer on a substrate surface by heating the surface in the presence of C 60 , wherein the substrate is selected from the group consisting of germanium, tantalum, titanium, and tungsten.
Claim 21
Dependent Claim
47 words
A process for forming carbide films and microcomponents on a metal substrate, comprising: forming a carbide layer on a substrate surface by heating the surface in the presence of C 60 , wherein the substrate is selected from the group consisting of germanium, tantalum, titanium, and tungsten.
Claim 22
Dependent Claim
35 words
A process as recited in claim 18, further comprising: forming a C 60 -covered substrate surface by exposing the substrate surface to C 60 before forming the carbide layer on the C 60 -covered surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-18 | 2002-07-20 | 2003-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-18 | 2006-07-20 | 2007-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-18 | 2010-07-20 | 2011-01-19 | $7700.00 | Window Closed / Lapsed |