US5861327A
Expired / Lapsed
US
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Fabrication method of gate electrode in semiconductor device
Assignee: Pendragon Electronics and Telecommunications Research LLC
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Filing: 1997-07-10
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Granted: 1999-01-19
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Expires: 2017-07-10
Abstract
Abstract A fabrication method of a semiconductor device is disclosed. A T-shaped gate used for decreasing the gate resistance is adopted in fabricating an ultrahigh frequency and low-noise device. According to the present invention, a gate pattern is formed by a dual exposure technique, a thin metal film is formed, a pattern for plating is formed, and a gate is formed by electroplating, whereby decreasing a gate length and gate resistance. Therefore, the cost of production is decreased, the yield is improved, and the noise figure is minimized.
Inventors
- 👤 Sung-Jae Maeng
- 👤 Jae-Jin Lee
- 👤 Kwang-Eui Pyun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:33
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10P; H10P10/00; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10P76/00; H10P76/20; H10P76/204; H10P76/2041
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
139 words
A method for forming a gate in a semiconductor device, comprising the steps of: forming a source and a drain on an epitaxial structure substrate; exposing a first region including a gate region between the source and the drain to a light after a first photoresist film is formed on the substrate; exposing a second region of the first photoresist film including the gate region to the light; forming a gate pattern by developing the exposed first and second regions, thereby forming a resulting structure; forming a metal film on the resulting structure including the gate pattern; coating a second photoresist film on the metal film and patterning the second photoresist film; forming a T-shaped gate by using an electroplating using the second photoresist pattern as a mask; and removing the second photoresist pattern and the first photoresist pattern.
Claim 2
Independent Claim
139 words
A method for forming a gate in a semiconductor device, comprising the steps of: forming a source and a drain on an epitaxial structure substrate; exposing a first region including a gate region between the source and the drain to a light after a first photoresist film is formed on the substrate; exposing a second region of the first photoresist film including the gate region to the light; forming a gate pattern by developing the exposed first and second regions, thereby forming a resulting structure; forming a metal film on the resulting structure including the gate pattern; coating a second photoresist film on the metal film and patterning the second photoresist film; forming a T-shaped gate by using an electroplating using the second photoresist pattern as a mask; and removing the second photoresist pattern and the first photoresist pattern.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein the metal film is formed to have a thickness of 200 Å or less.
Claim 4
Dependent Claim
21 words
The method of claim 1, wherein the T-shaped gate is defined by a dual exposure process and formed by said electroplating.
References Cited (Backward Citations)
US5563079A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-18 | 2002-07-20 | 2003-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-18 | 2006-07-20 | 2007-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-18 | 2010-07-20 | 2011-01-19 | $7700.00 | Window Closed / Lapsed |