US5861055A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polishing composition for CMP operations
Assignee: Bell Semiconductor LLC
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Filing: 1997-03-20
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Granted: 1999-01-19
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Expires: 2017-03-20
Abstract
Abstract A polishing composition is shown which includes (1) a polishing media particle; (2) a film forming binder for suspending the particle and forming a temporary film on an exposed surface of the workpiece, the temporary film being dissolvable in a subsequently applied polishing wash, whereby the polishing media particle is freed to polish the workpiece; (3) a solvent for suspending the polishing media particle in the film forming binder to facilitate forming the temporary film; and (4) a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece.
Inventors
- 👤 Derryl D. J. Allman
- 👤 William J. Crosby
- 👤 James A. Maiolo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:30
CPC Classifications
C; C09; C09G; C09G1/00; C09G1/02; C09K; C09K3/00; C09K3/14; C09K3/1409
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
320 words
A dissolvable film semiconductor polishing composition for polishing or planarizing a semiconductor workpiece, the composition comprising: polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; a film forming binder comprising a natural or synthetic polymer for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film, the solvent being selected from the group consisting of alcohols, acids and water, the solvent being further characterized as having a boiling point selected to allow the film to set up slowly on the exposed surface of the semiconductor workpiece to produce an even coating across the exposed surface; a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the polishing media particle solids content is greater than 5% and less than about 80% by weight based on the total weight of the composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; and wherein the semiconductor polishing composition forms a temporary dissolvable film on the exposed surface of the workpiece film forming binder is a natural or synthetic polymer selected from the group consisting of polymers of acrylamide, polymers of acrylic acid, polymers of methacrylic acid, polymers of maleic acid, polymers of ethylene oxide, polymers of vinylpyrrolidone, polymers of cellulose, guar polymers, graft copolymers of guar and cellulose and xanthan polymers.
Claim 2
Dependent Claim
320 words
A dissolvable film semiconductor polishing composition for polishing or planarizing a semiconductor workpiece, the composition comprising: polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; a film forming binder comprising a natural or synthetic polymer for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film, the solvent being selected from the group consisting of alcohols, acids and water, the solvent being further characterized as having a boiling point selected to allow the film to set up slowly on the exposed surface of the semiconductor workpiece to produce an even coating across the exposed surface; a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the polishing media particle solids content is greater than 5% and less than about 80% by weight based on the total weight of the composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; and wherein the semiconductor polishing composition forms a temporary dissolvable film on the exposed surface of the workpiece film forming binder is a natural or synthetic polymer selected from the group consisting of polymers of acrylamide, polymers of acrylic acid, polymers of methacrylic acid, polymers of maleic acid, polymers of ethylene oxide, polymers of vinylpyrrolidone, polymers of cellulose, guar polymers, graft copolymers of guar and cellulose and xanthan polymers.
Claim 3
Dependent Claim
22 words
The semiconductor polishing composition of claim 1, wherein the polishing media particles are silica particles less than about one micron in size.
Claim 4
Dependent Claim
218 words
A semiconductor polishing composition for polishing or planarizing a semiconductor workpiece, the composition comprising: polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; a film forming binder comprising a natural or synthetic polymer for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film the solvent being selected from the group consisting of alcohols, acids and water; a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the polishing media particle solids content is less than about 80% by weight based on the total weight of the composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; and wherein the film forming binder is a polyorganosiloxane.
Claim 5
Dependent Claim
218 words
A semiconductor polishing composition for polishing or planarizing a semiconductor workpiece, the composition comprising: polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; a film forming binder comprising a natural or synthetic polymer for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film the solvent being selected from the group consisting of alcohols, acids and water; a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the polishing media particle solids content is less than about 80% by weight based on the total weight of the composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; and wherein the film forming binder is a polyorganosiloxane.
Claim 6
Dependent Claim
12 words
The polishing composition of claim 3, wherein the solvent is an alcohol.
Claim 7
Dependent Claim
212 words
A polishing composition for polishing or planarizing a semiconductor workpiece, the composition comprising: polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; a film forming binder for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film; a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the polishing media particle solids content is less than about 80% by weight based on the total weight of the composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; wherein the film forming binder is a polyorganosiloxane; wherein the solvent is an alcohol; and wherein the wetting agent is an organofunctional silane.
Claim 8
Dependent Claim
212 words
A polishing composition for polishing or planarizing a semiconductor workpiece, the composition comprising: polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; a film forming binder for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film; a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the polishing media particle solids content is less than about 80% by weight based on the total weight of the composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; wherein the film forming binder is a polyorganosiloxane; wherein the solvent is an alcohol; and wherein the wetting agent is an organofunctional silane.
Claim 9
Dependent Claim
24 words
The polishing composition of claim 5, wherein the ratio of polishing media particle to polyorganosiloxane is in the range from about 0.01:1 to 20:1.
Claim 10
Dependent Claim
18 words
The polishing composition of claim 6, wherein the ratio of polishing media particle to polyorganosiloxane is about 1:1.
Claim 11
Dependent Claim
309 words
A dried film composition for polishing or planarizing a semiconductor workpiece, the dried film composition being made by the process of: combining the following ingredients: (a) polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; (b) a film forming binder comprising a natural or synthetic polymer for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; (c) a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film, the solvent being selected from the group consisting of alcohols, acids and water, the solvent being further characterized as having a boiling point selected to allow the film to set up slowly on the exposed surface of the semiconductor workpiece to produce an even coating across the exposed surface; (d) a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the solvent is evaporated away to form the dried film; wherein the polishing media particle solids content is less than about 80% by weight based on the total weight of the dried film composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; and wherein the film forming binder is a natural or synthetic polymer which is selected to evenly disperse and hold the polishing media particle in a dried film on the exposed surface of the semiconductor workpiece.
Claim 12
Dependent Claim
309 words
A dried film composition for polishing or planarizing a semiconductor workpiece, the dried film composition being made by the process of: combining the following ingredients: (a) polishing media particles having a particle size less than about one micron, present in an amount to define a solids content for the composition; (b) a film forming binder comprising a natural or synthetic polymer for suspending the particles and forming a temporary film on an exposed surface of the semiconductor workpiece, the temporary film being gradually removed in a subsequently applied polishing wash, whereby the polishing media particles are freed to polish the workpiece; (c) a solvent for suspending the polishing media particles in the film forming binder to facilitate forming the temporary film, the solvent being selected from the group consisting of alcohols, acids and water, the solvent being further characterized as having a boiling point selected to allow the film to set up slowly on the exposed surface of the semiconductor workpiece to produce an even coating across the exposed surface; (d) a wetting agent to improve the wettability of the composition on the exposed surface of the workpiece; wherein the solvent is evaporated away to form the dried film; wherein the polishing media particle solids content is less than about 80% by weight based on the total weight of the dried film composition; wherein the polishing media particles are selected from the group consisting of silica, calcium oxide, aluminum oxide, silicon nitride, silicon carbide, cesium oxide, natural and synthetic diamond, metal silicides, tungsten oxide, titanium nitride, titanium oxide, other materials harder than the surface of the workpiece to be polished and combinations thereof; and wherein the film forming binder is a natural or synthetic polymer which is selected to evenly disperse and hold the polishing media particle in a dried film on the exposed surface of the semiconductor workpiece.
Claim 13
Dependent Claim
17 words
The dissolvable film semiconductor polishing composition of claim 8, wherein the wetting agent is an organofunctional silane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-18 | 2002-07-20 | 2003-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-18 | 2006-07-20 | 2007-01-19 | $3760.00 | Window Closed / Lapsed |
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