Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
181 words
A liquid crystal display apparatus, comprising: a pair of substrates, at least one of said pair of substrates being transparent, a liquid crystal layer formed by filling a liquid crystal material between said pair of substrates; one of said pair of substrates comprising a display region having a plurality of first semiconductor elements disposed on a matrix and a peripheral circuit region having a plurality of second semiconductor elements and being disposed on the periphery of said display region to drive said plurality of first semiconductor elements; each of said plurality of second semiconductor elements in said peripheral circuit region having a bipolar semiconductor element and a monopolar semiconductor element; and wherein said first and second semiconductor elements are thin film semiconductor elements, respectively, and said bipolar and monopolar thin film semiconductor elements, composing said second semiconductor element, have a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film, said semiconductor layer having a p + -zone and an n + -zone respectively disposed adjacent both sides of said gate electrode.
Claim 2
Dependent Claim
181 words
A liquid crystal display apparatus, comprising: a pair of substrates, at least one of said pair of substrates being transparent, a liquid crystal layer formed by filling a liquid crystal material between said pair of substrates; one of said pair of substrates comprising a display region having a plurality of first semiconductor elements disposed on a matrix and a peripheral circuit region having a plurality of second semiconductor elements and being disposed on the periphery of said display region to drive said plurality of first semiconductor elements; each of said plurality of second semiconductor elements in said peripheral circuit region having a bipolar semiconductor element and a monopolar semiconductor element; and wherein said first and second semiconductor elements are thin film semiconductor elements, respectively, and said bipolar and monopolar thin film semiconductor elements, composing said second semiconductor element, have a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film, said semiconductor layer having a p + -zone and an n + -zone respectively disposed adjacent both sides of said gate electrode.
Claim 3
Dependent Claim
26 words
A liquid crystal display apparatus according to claim 1, wherein said bipolar and monopolar semiconductor elements composing each second semiconductor element are configured as an inverter.
Claim 4
Dependent Claim
21 words
A liquid crystal display apparatus according to claim 2, wherein plural ones of said inverter are configured as a shift register.
Claim 5
Dependent Claim
48 words
A liquid crystal display apparatus according to claim 1, wherein a semiconductor layer of said first semiconductor element formed in said display region is made of amorphous silicon and the semiconductor layer of said second semiconductor element formed in said peripheral circuit region is made of polycrystalline silicon.
Claim 6
Dependent Claim
51 words
A liquid crystal display apparatus according to claim 1, wherein said p + -zone and said n + -zone in said semiconductor layer of said bipolar thin film semiconductor element are disposed within the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Claim 7
Dependent Claim
28 words
A liquid crystal display apparatus according to claim 5, wherein said n + -zone of said bipolar thin film semiconductor element is formed on said p + -zone.
Claim 8
Dependent Claim
30 words
A liquid crystal display apparatus according to claim 6, wherein said n + -zone of said bipolar thin film semiconductor element overlaps with a channel zone of said semiconductor layer.
Claim 9
Dependent Claim
53 words
A liquid crystal display apparatus according to claim 1, wherein one of said p + -zone and said n + -zone in said semiconductor layer of said monopolar thin film semiconductor element is disposed outside the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Claim 10
Dependent Claim
41 words
A liquid crystal display apparatus according to claim 8, wherein one of said p + -zone and said n + -zone in said semiconductor layer of said monopolar thin film semiconductor element overlaps with a channel zone of said semiconductor layer.
Claim 11
Dependent Claim
60 words
A liquid crystal display apparatus according to claim 9, wherein said p + -zone in said semiconductor layer of said monopolar thin film semiconductor element is positioned outside the range of the region of the gate electrode as seen from the vertical direction of said substrate and said n + -zone overlaps with a channel zone of said semiconductor layer.
Claim 12
Dependent Claim
50 words
A liquid crystal display apparatus according to claim 7, wherein a semiconductor layer of said thin film semiconductor element formed in said display region is made of amorphous silicon and the semiconductor layer of said thin film semiconductor element formed in said peripheral circuit region is made of polycrystalline silicon.
Claim 13
Dependent Claim
27 words
A liquid crystal display apparatus according to claim 1, wherein each of said first semiconductor elements in said display region is a monopolar thin film semiconductor element.
Claim 14
Dependent Claim
100 words
A liquid crystal display apparatus according to claim 12, wherein: each of said monopolar semiconductor elements in said display region has a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film; said semiconductor layer has a p + -zone and an n + -zone respectively disposed adjacent both sides of said gate electrode; and one of said p + -zone and said n + -zone in said semiconductor layer is disposed outside the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Claim 15
Dependent Claim
27 words
A liquid crystal display apparatus according to claim 1, wherein each of said first semiconductor elements in said display region is a bipolar thin film semiconductor element.
Claim 16
Dependent Claim
102 words
A liquid crystal display apparatus according to claim 14, wherein: each of said bipolar thin film semiconductor elements in said display region has a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film; said semiconductor layer has a p + -zone and an n + -zone respectively disposed adjacent both sides of said gate electrode; and one of said p + -zone and said n + -zone in said semiconductor layer is disposed outside the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Claim 17
Dependent Claim
44 words
An information processing apparatus, which comprises: the liquid crystal display apparatus as defined in claim 1; a controller for supplying control signals to a peripheral circuit region of said liquid crystal display apparatus and; a communication unit for supplying external signals to said controller.
Claim 18
Dependent Claim
164 words
A semiconductor device comprising a substrate, and monopolar thin film semiconductor elements and bipolar thin film semiconductor elements formed on said substrate, wherein: each monopolar thin film semiconductor element and each bipolar thin film semiconductor element has a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film; said semiconductor layer has a p + -zone and an n + -zone respectively disposed adjacent both sides of said gate electrode; one of said p + -zone and said n + -zone in said semiconductor layer of said monopolar thin film semiconductor element is disposed outside the range of the region of the gate electrode as seen from the vertical direction of said substrate; and said p + -zone and said n + -zone in said semiconductor layer of said bipolar thin film semiconductor element are disposed within the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Claim 19
Dependent Claim
164 words
A semiconductor device comprising a substrate, and monopolar thin film semiconductor elements and bipolar thin film semiconductor elements formed on said substrate, wherein: each monopolar thin film semiconductor element and each bipolar thin film semiconductor element has a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film; said semiconductor layer has a p + -zone and an n + -zone respectively disposed adjacent both sides of said gate electrode; one of said p + -zone and said n + -zone in said semiconductor layer of said monopolar thin film semiconductor element is disposed outside the range of the region of the gate electrode as seen from the vertical direction of said substrate; and said p + -zone and said n + -zone in said semiconductor layer of said bipolar thin film semiconductor element are disposed within the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Claim 20
Dependent Claim
39 words
A semiconductor device according to claim 17, wherein one of said p + -zone and said n + -zone in said semiconductor layer of said monopolar thin film semiconductor element overlaps with a channel zone of said semiconductor layer.
Claim 21
Dependent Claim
58 words
A semiconductor device according to claim 18, wherein said p + -zone in said semiconductor layer of said monopolar thin film semiconductor element is positioned outside the range of the region of the gate electrode as seen from the vertical direction of said substrate and said n + -zone overlaps with a channel zone of said semiconductor layer.
Claim 22
Dependent Claim
30 words
A semiconductor device according to claim 19, wherein said n + -zone is formed on said p + -zone in said semiconductor layer of said bipolar thin film semiconductor element.
Claim 23
Dependent Claim
32 words
A semiconductor device according to claim 20, wherein said n + -zone of the semiconductor layer of said bipolar thin film semiconductor element overlaps with a channel zone of said semiconductor layer.