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US5846859A
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Method for manufacturing a semiconductor memory device having capacitive storage
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-02-23
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Granted: 1998-12-08
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Expires: 2016-02-23
Abstract
Abstract A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.
Inventors
- 👤 Sang-in Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:10
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/418; Y; Y10; Y10S; Y10S148/00; Y10S148/148
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
97 words
A manufacturing method for a capacitor in a semiconductor memory device comprising the steps of: forming a first electrode having an amorphous first silicon carbide (SiC) layer on a surface of a semiconductor substrate, said first electrode formation step being performed by forming a first polysilicon layer doped with impurities and forming said amorphous first SiC layer on said first polysilicon layer; forming a dielectric film on said first silicon carbide layer; and forming a second electrode, having a second silicon carbide (SiC) layer, on said dielectric film, said second layer being disposed on the dielectric film.
Claim 2
Dependent Claim
97 words
A manufacturing method for a capacitor in a semiconductor memory device comprising the steps of: forming a first electrode having an amorphous first silicon carbide (SiC) layer on a surface of a semiconductor substrate, said first electrode formation step being performed by forming a first polysilicon layer doped with impurities and forming said amorphous first SiC layer on said first polysilicon layer; forming a dielectric film on said first silicon carbide layer; and forming a second electrode, having a second silicon carbide (SiC) layer, on said dielectric film, said second layer being disposed on the dielectric film.
Claim 3
Dependent Claim
35 words
A manufacturing method for a capacitor in a semiconductor memory according to claim 1, wherein said dielectric film is made of a material selected from the group consisting of a ferroelectric and a paraelectric insulator.
Claim 4
Dependent Claim
79 words
A manufacturing method for a capacitor according to claim 1, wherein said first electrode formation step further comprises a step of forming a pattern by anisotropically etching said first polysilicon layer and said amorphous first SiC layer; a step of forming an amorphous second SiC layer on the entire surface in the semiconductor substrate where said pattern is formed; and a step of forming a spacer on sidewalls of said pattern by anisotropically etching said amorphous second SiC layer.
Claim 5
Dependent Claim
49 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 3, wherein said second electrode formation step is performed by forming an amorphous third SiC layer on said dielectric film and forming a second polysilicon layer doped with impurities on said amorphous third SiC layer.
Claim 6
Dependent Claim
35 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 1, wherein the surface of said first polysilicon layer is treated by hydrogen (H 2 ) and then by phosphorus (P).
Claim 7
Dependent Claim
37 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 5, wherein said hydrogen treatment is carried out by using one selected from the group consisting of hydrogen plasma and a hydrogen radical.
Claim 8
Dependent Claim
23 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 5, wherein said hydrogen treatment is hydrogen baking process.
Claim 9
Dependent Claim
44 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 1, wherein said processes of forming said first polysilicon layer doped with impurities and forming said amorphous first SiC layer are sequentially performed in the same chamber without breaking vacuum.
Claim 10
Dependent Claim
44 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 4, wherein said processes of forming said second polysilicon layer doped with impurities and forming said amorphous third SiC layer are sequentially performed in the same chamber without breaking vacuum.
Claim 11
Dependent Claim
66 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 4, wherein said all SiC layer are formed by a plasma CVD method using one selected from the group consisting of a mixed gas of silane (SiH 4 ) and propane (C 3 H 8 ) and a mixed gas of silane (SiH 4 ) and benzene (C 6 H 6 ).
Claim 12
Dependent Claim
45 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 10, wherein said plasma CVD method is performed by adding one selected from the group consisting of phosphine (PH 3 ) and arsenic hydride (AsH 3 ) to said mixed gas.
Claim 13
Dependent Claim
27 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 11, wherein impurities in said all SiC layers are activated by heat treatment.
Claim 14
Dependent Claim
32 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 11, wherein said heat treatment is performed at 800° C. for 10˜30 seconds under an argon (Ar) atmosphere.
Claim 15
Dependent Claim
39 words
A manufacturing method for a capacitor in a semiconductor memory device according to claim 12, wherein said heat treatment is performed by depositing and reflowing an insulating material on the entire substrate resulting from said second electrode formation step.
References Cited (Backward Citations)
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