Abstract An apparatus for manufacturing a semiconductor device having a stage for loading a wafer includes: a flat horizontal main surface formed so that the wafer can be fully seated thereon; a perimeter surface formed at an outer portion of the stage and spaced at a predetermined distance from the flat main surface at a height lower than that of the flat main surface; and an annular slope formed between an outer circumference of the flat main surface and an inner circumference of the perimeter surface. The annular slope has a predetermined angle of inclination with respect to the flat main surface. The apparatus prevents the occurrence of plasma buildup and minimizes poor processing uniformity due to the buildup of polymer deposits on the stage.
An apparatus for manufacturing a semiconductor device comprising a stage on which a wafer is placed for processing in a reaction chamber, said stage comprising: a flat main surface horizontally formed so that said wafer having a continuous surface, whereby said wafer is devoid of a hole extending therethrough, can be fully seated thereon; a perimeter surface formed at an outer portion of said stage, wherein said perimeter surface is spaced at a predetermined distance from said flat main surface at a height lower than said flat main surface; and an annular slope formed between an outer circumference of said flat main surface and an inner circumference of said perimeter surface, said annular slope being exposed to reaction chamber gases and having a predetermined angle of inclination with respect to said flat main surface.
Claim 2
Independent Claim
134 words
An apparatus for manufacturing a semiconductor device comprising a stage on which a wafer is placed for processing in a reaction chamber, said stage comprising: a flat main surface horizontally formed so that said wafer having a continuous surface, whereby said wafer is devoid of a hole extending therethrough, can be fully seated thereon; a perimeter surface formed at an outer portion of said stage, wherein said perimeter surface is spaced at a predetermined distance from said flat main surface at a height lower than said flat main surface; and an annular slope formed between an outer circumference of said flat main surface and an inner circumference of said perimeter surface, said annular slope being exposed to reaction chamber gases and having a predetermined angle of inclination with respect to said flat main surface.
Claim 3
Dependent Claim
31 words
An apparatus for manufacturing a semiconductor device according to claim 1, wherein said predetermined angle of inclination formed between said flat main surface and said annular slope is at least 20°.