US5835172A
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Thin film transistor liquid crystal display with main gate electrode contacting subsidiary gate electrodes and method of fabricating
Assignee: LG Display Co Ltd
•
Filing: 1997-06-13
•
Granted: 1998-11-10
•
Expires: 2017-06-13
Abstract
Abstract A thin-film transistor liquid crystal display includes a substrate, an active layer on the substrate, having first and second impurity regions and first, second, and third non-impurity regions, gate insulating layer on the active layer, first and second electric field control layers on the second and third non-impurity regions, respectively, first and second subsidiary gate electrodes on the first and second electric field control layers, respectively, and a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers, respectively.
Inventors
- 👤 Ju-Cheon Yeo
- 👤 Sang-Gul Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:10
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6733; H10D86/00; H10D86/40; H10D86/441; H10D86/60
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
98 words
A thin-film transistor liquid crystal display comprising: a substrate; an active layer on the substrate having first and second impurity regions and first, second, and third non-impurity regions; a gate insulating layer on the active layer; first and second electric field control layers on the second and third non-impurity regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; and a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers.
Claim 2
Dependent Claim
98 words
A thin-film transistor liquid crystal display comprising: a substrate; an active layer on the substrate having first and second impurity regions and first, second, and third non-impurity regions; a gate insulating layer on the active layer; first and second electric field control layers on the second and third non-impurity regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; and a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers.
Claim 3
Dependent Claim
26 words
The thin-film transistor liquid crystal display according to claim 1, wherein the gate insulating layer covers the active layer and an exposed surface of the substrate.
Claim 4
Dependent Claim
23 words
The thin-film transistor liquid crystal display according to claims 1, wherein the gate insulating layer and the active layer have the same pattern.
Claim 5
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 3, wherein the subsidiary gate electrodes and the electric field control layers cover edges of the active layer and the gate insulating layer.
Claim 6
Dependent Claim
27 words
The thin-film transistor liquid crystal display according to claim 1, further comprising source and drain electrodes being below and contacting the first and second impurity regions, respectively.
Claim 7
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 1, wherein the electric field control layers include at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 8
Dependent Claim
19 words
The thin-film transistor liquid crystal display according to claim 1, wherein the non-impurity regions are leakage current control regions.
Claim 9
Dependent Claim
19 words
The thin-film transistor liquid crystal display according to claim 1, wherein the first non-impurity region is a channel region.
Claim 10
Dependent Claim
39 words
The thin-film transistor liquid crystal display according to claim 1, wherein the gate insulating layer includes at least one of silicon oxide film, silicon nitride film, silicon oxide/silicon nitride, silicon nitride/silicon oxide film, and silicon oxide/silicon nitride/silicon oxide film.
Claim 11
Dependent Claim
92 words
The thin-film transistor liquid crystal display according to claim 1, further comprising: third, fourth, fifth, and sixth non-impurity regions, and a second channel region on the substrate; third and fourth electric field control layers on the fifth and sixth non-impurity regions, respectively; third and fourth subsidiary gate electrodes on the third and fourth electric field control layers, respectively; and a second main gate electrode on the gate insulating layer, the second main gate electrode contacting the third and fourth subsidiary gate electrodes and the third and fourth electric field control layers, respectively.
Claim 12
Dependent Claim
108 words
A thin-film transistor liquid crystal display comprising: a substrate; an active layer having first and second impurity regions; first and second leakage current control regions and a channel region, a gate insulating layer on the active layer, and an exposed surface of the substrate; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers, respectively.
Claim 13
Dependent Claim
108 words
A thin-film transistor liquid crystal display comprising: a substrate; an active layer having first and second impurity regions; first and second leakage current control regions and a channel region, a gate insulating layer on the active layer, and an exposed surface of the substrate; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers, respectively.
Claim 14
Dependent Claim
86 words
The thin-film transistor liquid crystal display according to claim 11, further comprising: source and drain electrodes below and contacting the first and second impurity regions, respectively; a first insulating layer on an exposed surface of the substrate except the source and drain electrode; a second insulating layer on the first insulating layer on the first insulating layer and the source drain electrodes, the second insulating layer having a contact hole over the drain electrode; and a pixel electrode contacting the drain electrode through the contact hole.
Claim 15
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 11, wherein the electric field control layers include at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 16
Dependent Claim
40 words
The thin-film transistor liquid crystal display according to claim 11, wherein the gate insulating layer includes at least one of silicon oxide film, silicon nitride film, silicon oxide/silicon nitride film, silicon nitride/silicon oxide film, and silicon oxide/silicon nitride/silicon oxide film.
Claim 17
Dependent Claim
113 words
A thin-film transistor liquid crystal display comprising: a substrate; an active layer having first and second impurity regions; first and second leakage current control regions and a channel region, a gate insulating layer on the active layer, the gate insulating has a pattern the same as the active layer; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers, respectively.
Claim 18
Dependent Claim
113 words
A thin-film transistor liquid crystal display comprising: a substrate; an active layer having first and second impurity regions; first and second leakage current control regions and a channel region, a gate insulating layer on the active layer, the gate insulating has a pattern the same as the active layer; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; a main gate electrode on the gate insulating layer, the main gate electrode contacting the first and second subsidiary gate electrodes and the first and second electric field control layers, respectively.
Claim 19
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 15, wherein the subsidiary gate electrodes and the electric field control layers cover edges of the active layer and the gate insulating layer.
Claim 20
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 15, wherein the electric field control layers include at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 21
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 15, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
Claim 22
Dependent Claim
107 words
A thin film transistor liquid crystal display comprising: a substrate; an active layer having first and second impurity regions; first and second leakage current control regions and a channel region, a gate insulating layer on the active layer and an exposing surface over the substrate; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; and source and drain electrodes contacting the first and second impurity regions, respectively, a portion of the source and drain electrodes being below the first and second impurity regions.
Claim 23
Dependent Claim
107 words
A thin film transistor liquid crystal display comprising: a substrate; an active layer having first and second impurity regions; first and second leakage current control regions and a channel region, a gate insulating layer on the active layer and an exposing surface over the substrate; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; and source and drain electrodes contacting the first and second impurity regions, respectively, a portion of the source and drain electrodes being below the first and second impurity regions.
Claim 24
Dependent Claim
75 words
The thin-film transistor liquid crystal display according to claim 19, further comprising: source and drain electrodes contacting the first and second impurity regions, respectively; a data bus line extended to the source electrode; a gate bus line extended to the main gate electrode, the gate bus line and the data bus line being crossed each other; a subsidiary gate bus line on the electric field control layers, the subsidiary gate electrode, and a pixel electrode.
Claim 25
Dependent Claim
28 words
The thin-film transistor liquid crystal display according to claim 19, further comprising a parasitic capacitance reducing layer on the gate insulating layer including a portion of the substrate.
Claim 26
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 19, wherein the electric field control layers include at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 27
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 19, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
Claim 28
Dependent Claim
161 words
A thin film transistor liquid crystal display comprising: a substrate; an active layer having first, second, and third impurity regions, first and second leakage current control regions and first and second channel regions on the substrate, the leakage current control regions being between one of the impurity regions and one of the channel regions; a gate insulating layer on the active layer including an exposed surface of the substrate; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; first and second main gate electrodes on the gate insulating layer, the first main gate electrode contacting the first electric field control layer and the first subsidiary main gate electrode, the second main gate electrode contacting the second electric field control layer and the second subsidiary main gate electrode, respectively; and source and drain electrodes contacting the impurity regions.
Claim 29
Dependent Claim
161 words
A thin film transistor liquid crystal display comprising: a substrate; an active layer having first, second, and third impurity regions, first and second leakage current control regions and first and second channel regions on the substrate, the leakage current control regions being between one of the impurity regions and one of the channel regions; a gate insulating layer on the active layer including an exposed surface of the substrate; first and second electric field control layers on the first and second leakage current control regions, respectively; first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; first and second main gate electrodes on the gate insulating layer, the first main gate electrode contacting the first electric field control layer and the first subsidiary main gate electrode, the second main gate electrode contacting the second electric field control layer and the second subsidiary main gate electrode, respectively; and source and drain electrodes contacting the impurity regions.
Claim 30
Dependent Claim
32 words
The thin-film transistor liquid crystal display according to claim 24, wherein the electric field control layers include at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 31
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 24, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
Claim 32
Independent Claim
127 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming an active layer on a substrate; forming a gate insulating layer on the active layer including an exposed surface of the substrate; forming first and second electric field control layers on the gate insulating layer; forming first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; forming a main gate electrode on the gate insulating layer including portions of the electric filed control layers and the subsidiary gate electrodes; and implanting impurity ions using the main gate electrode and the subsidiary gate electrodes as masks to form first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 33
Independent Claim
127 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming an active layer on a substrate; forming a gate insulating layer on the active layer including an exposed surface of the substrate; forming first and second electric field control layers on the gate insulating layer; forming first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; forming a main gate electrode on the gate insulating layer including portions of the electric filed control layers and the subsidiary gate electrodes; and implanting impurity ions using the main gate electrode and the subsidiary gate electrodes as masks to form first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 34
Dependent Claim
22 words
The method according to claim 27, the active layer in the step of forming the active layer includes an intrinsic silicon layer.
Claim 35
Dependent Claim
27 words
The method according to claim 27, the electric field control layers includes at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 36
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 27, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
Claim 37
Dependent Claim
18 words
The thin-film transistor liquid crystal display according to claim 27, the first non-impurity region is a channel region.
Claim 38
Independent Claim
148 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming an active layer on a substrate forming a gate insulating layer on the active layer; patterning the active layer and the gate insulating layer simultaneously; forming first and second electric field control layers on the gate insulating layer, the first and second electric field control layers covering edges of the active layer and the gate insulating layer; forming first and second subsidiary gate electrodes on the first and second electric control layers, respectively; forming a main gate electrode on the gate insulating layer including portions of the electric field control layers and the subsidiary gate electrodes; and implanting impurity ions using the main gate electrode and the subsidiary gate electrodes as masks to form first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 39
Independent Claim
148 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming an active layer on a substrate forming a gate insulating layer on the active layer; patterning the active layer and the gate insulating layer simultaneously; forming first and second electric field control layers on the gate insulating layer, the first and second electric field control layers covering edges of the active layer and the gate insulating layer; forming first and second subsidiary gate electrodes on the first and second electric control layers, respectively; forming a main gate electrode on the gate insulating layer including portions of the electric field control layers and the subsidiary gate electrodes; and implanting impurity ions using the main gate electrode and the subsidiary gate electrodes as masks to form first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 40
Dependent Claim
22 words
The method according to claim 32, the active layer in the step of forming the active layer includes an intrinsic silicon layer.
Claim 41
Dependent Claim
27 words
The method according to claim 32, the electric field control layers includes at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layers.
Claim 42
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 32, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
Claim 43
Dependent Claim
14 words
The method according to claim 32, the first non-impurity region is a channel region.
Claim 44
Independent Claim
136 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming source and drain electrodes on a substrate; forming an active layer on the substrate including a portions of the source and drain electrodes; forming a gate insulating layer on an exposed surface of the substrate; forming first and second electric field control layers; forming first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; forming a main gate electrode on the gate insulating layer including portions of the subsidiary gate electrodes and the electric field control layers; and implanting impurity ions using the main gate electrodes and the subsidiary gate electrode as masks to form a first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 45
Independent Claim
136 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming source and drain electrodes on a substrate; forming an active layer on the substrate including a portions of the source and drain electrodes; forming a gate insulating layer on an exposed surface of the substrate; forming first and second electric field control layers; forming first and second subsidiary gate electrodes on the first and second electric field control layers, respectively; forming a main gate electrode on the gate insulating layer including portions of the subsidiary gate electrodes and the electric field control layers; and implanting impurity ions using the main gate electrodes and the subsidiary gate electrode as masks to form a first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 46
Dependent Claim
22 words
The method according to claim 37, the active layer in the step of forming the active layer includes an intrinsic silicon layer.
Claim 47
Dependent Claim
27 words
The method according to claim 37, the electric field control layers includes at least one of an amorphous silicon layer, polycrystalline silicon layer, and microcrystalline silicon layer.
Claim 48
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 37, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
Claim 49
Dependent Claim
18 words
The thin-film transistor liquid crystal display according to claim 37, the first non-impurity region is a channel region.
Claim 50
Dependent Claim
84 words
The method according to claim 37, further comprising the steps of: forming a data bus line on the substrate, the data bus line contacting the source electrode; forming a parasitic capacitance reducing layer on the gate insulating layer including the portion of the substrate; forming a subsidiary data bus line on the parasitic capacitance reducing layer; and forming a gate bus line contacting the main gate electrode, the gate bus line being on the subsidiary data bus line including the portion of the substrate.
Claim 51
Independent Claim
157 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming an active layer on a substrate; forming a gate insulating layer on the active layer including an exposed surface of the substrate; forming an amorphous silicon layer on the gate insulating layer; implanting impurity ions against the amorphous silicon layer to have an impurity concentration at the surface of the silicon layer higher than that of the rest of the silicon layer; patterning the amorphous silicon layer to form first and second electric field control layer and first and second subsidiary gate electrodes; forming a main gate electrode on the gate insulating layer including portions of the subsidiary gate electrodes and the electric field control layers; and implanting impurity ions using the main gate electrodes and subsidiary gate electrodes as masks to form first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 52
Independent Claim
157 words
A method of fabricating a thin film transistor liquid crystal display, the method comprising the steps of: forming an active layer on a substrate; forming a gate insulating layer on the active layer including an exposed surface of the substrate; forming an amorphous silicon layer on the gate insulating layer; implanting impurity ions against the amorphous silicon layer to have an impurity concentration at the surface of the silicon layer higher than that of the rest of the silicon layer; patterning the amorphous silicon layer to form first and second electric field control layer and first and second subsidiary gate electrodes; forming a main gate electrode on the gate insulating layer including portions of the subsidiary gate electrodes and the electric field control layers; and implanting impurity ions using the main gate electrodes and subsidiary gate electrodes as masks to form first and second impurity regions and first, second, and third non-impurity regions at the active layer.
Claim 53
Dependent Claim
23 words
The method according to claim 43, wherein the active layer in the step of forming the active layer includes an intrinsic silicon layer.
Claim 54
Dependent Claim
35 words
The thin-film transistor liquid crystal display according to claim 43, wherein the gate insulating layer includes at least one of silicon oxide, silicon nitride, silicon oxide/silicon nitride, silicon nitride/silicon oxide, and silicon oxide/silicon nitride/silicon oxide.
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