Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
98 words
An integrated, variable gain power amplifier, comprising: a plurality of amplifier stages which have a common input and respective outputs, and a switching network which is operable to include selectable ones of said amplifier stages in contributing to a power amplifier output, said power amplifier output having a variable gain that depends upon the selected amplifier stages, said switching network comprising a plurality of micro-electromechanical (MEM) switches integrated with said amplifier stages on a common substrate, said MEM switches providing lower insertion losses and thereby higher amplifier efficiency than would be provided by similarly employed solid state switches.
Claim 2
Dependent Claim
98 words
An integrated, variable gain power amplifier, comprising: a plurality of amplifier stages which have a common input and respective outputs, and a switching network which is operable to include selectable ones of said amplifier stages in contributing to a power amplifier output, said power amplifier output having a variable gain that depends upon the selected amplifier stages, said switching network comprising a plurality of micro-electromechanical (MEM) switches integrated with said amplifier stages on a common substrate, said MEM switches providing lower insertion losses and thereby higher amplifier efficiency than would be provided by similarly employed solid state switches.
Claim 3
Dependent Claim
17 words
The power amplifier of claim 1, wherein said common substrate is a semi-insulating gallium arsenide (GaAs) substrate.
Claim 4
Dependent Claim
12 words
The power amplifier of claim 1, wherein said common substrate is silicon.
Claim 5
Dependent Claim
96 words
An integrated, variable gain power amplifier, comprising: a plurality of amplifier stages which have a common input and respective outputs, a switching network which is operable to include selectable ones of said amplifier stages in contributing to a power amplifier output, said power amplifier output having a variable gain that depends upon the selected amplifier stages, and a variable impedance network for said amplifier stages, said switching network being operable to vary the effective output impedance of said variable impedance network in accordance with the selected amplifier stages to provide impedance matching for said selected stages.
Claim 6
Dependent Claim
96 words
An integrated, variable gain power amplifier, comprising: a plurality of amplifier stages which have a common input and respective outputs, a switching network which is operable to include selectable ones of said amplifier stages in contributing to a power amplifier output, said power amplifier output having a variable gain that depends upon the selected amplifier stages, and a variable impedance network for said amplifier stages, said switching network being operable to vary the effective output impedance of said variable impedance network in accordance with the selected amplifier stages to provide impedance matching for said selected stages.
Claim 7
Dependent Claim
25 words
The power amplifier of claim 4, wherein said variable impedance network is integrated with said amplifier stages and said switching network on a common substrate.
Claim 8
Dependent Claim
48 words
The power amplifier of claim 4, wherein said variable impedance network comprises a plurality of individual impedance matching networks, said switching network operable to direct said stage outputs through selected impedance matching networks to provide impedance matching for said selected stages in accordance with the selected amplifier stages.
Claim 9
Dependent Claim
20 words
The power amplifier of claim 1, wherein each of said amplifier stages comprises at least one heterojunction bipolar transistor (HBT).
Claim 10
Dependent Claim
22 words
The power amplifier of claim 1, wherein each of said amplifier stages comprises at least one pseudomorphic high electron mobility transistor (PHEMT).
Claim 11
Dependent Claim
20 words
The power amplifier of claim 1, wherein each of said amplifier stages comprises at least one bipolar junction transistor (BJT).
Claim 12
Dependent Claim
17 words
The power amplifier of claim 1, wherein each of said amplifier stages comprises at least one FET.
Claim 13
Dependent Claim
36 words
The power amplifier of claim 1, wherein said power amplifier comprises at least four amplifier stages such that said power amplifier has at least five possible output power levels that are selectable with said switching network.
Claim 14
Dependent Claim
28 words
The power amplifier of claim 1, further comprising a control device connected to said switching network and arranged to operate said network in response to an external input.
Claim 15
Dependent Claim
41 words
The power amplifier of claim 12, wherein said switching network comprises a plurality of switches, each of said plurality of switches connected to said control device and arranged to operate in response to an actuation voltage received from said control device.
Claim 16
Dependent Claim
24 words
The power amplifier of claim 1, wherein said amplifier stages are designed to amplify input signals at frequencies of about 900 MHz and above.
Claim 17
Dependent Claim
89 words
An integrated, variable gain power amplifier with variable impedance matching, comprising: a plurality of amplifier stages which have a common input and respective outputs, a plurality of impedance matching networks, and a plurality of switches operable to interconnect the respective outputs of said stages together to provide a gain for said common input signal which varies with the number of said interconnected outputs, and to interconnect said impedance matching networks to the outputs of said stages such that output power is efficiently transferred from said stages to a load.
Claim 18
Dependent Claim
89 words
An integrated, variable gain power amplifier with variable impedance matching, comprising: a plurality of amplifier stages which have a common input and respective outputs, a plurality of impedance matching networks, and a plurality of switches operable to interconnect the respective outputs of said stages together to provide a gain for said common input signal which varies with the number of said interconnected outputs, and to interconnect said impedance matching networks to the outputs of said stages such that output power is efficiently transferred from said stages to a load.
Claim 19
Dependent Claim
21 words
The power amplifier of claim 15, wherein said amplifier stages, impedance matching networks and switches are integrated on a common substrate.
Claim 20
Dependent Claim
17 words
The power amplifier of claim 16, wherein said common substrate is a semi-insulating gallium arsenide (GaAs) substrate.
Claim 21
Dependent Claim
12 words
The power amplifier of claim 16, wherein said common substrate is silicon.
Claim 22
Dependent Claim
30 words
The power amplifier of claim 15, wherein each of said amplifier stages includes at least one heterojunction bipolar transistor (HBT) and is arranged to amplify a microwave frequency input signal.
Claim 23
Dependent Claim
33 words
The power amplifier of claim 15, wherein each of said amplifier stages includes at least one pseudomorphic high electron mobility transistor (PHEMT) and is arranged to amplify a millimeter wave frequency input signal.
Claim 24
Dependent Claim
20 words
The power amplifier of claim 15, wherein each of said amplifier stages includes at least one bipolar junction transistor (BJT).
Claim 25
Dependent Claim
17 words
The power amplifier of claim 15, wherein each of said amplifier stages includes at least one FET.
Claim 26
Dependent Claim
46 words
The power amplifier of claim 15, wherein the gain of each of said amplifier stages is about equal so that the overall gain of said power amplifier is about equal to the common gain value multiplied by the number of stages interconnected together with said switches.
Claim 27
Dependent Claim
48 words
The power amplifier of claim 15, wherein said plurality of amplifier stages comprises X stages and each of said stages has a unique gain value, said switches operable to interconnect said stages to provide an overall gain for said power amplifier from among 2 x possible gain values.
Claim 28
Dependent Claim
33 words
The power amplifier of claim 15, wherein said switches are operable to interconnect said plurality of impedance matching networks to provide proper impedance matching for each of said power amplifier's possible gain values.
Claim 29
Dependent Claim
13 words
The power amplifier of claim 15, wherein said switches are micro-electromechanical (MEM) switches.
Claim 30
Dependent Claim
29 words
The power amplifier of claim 15, further comprising a control device connected to said plurality of switches and arranged to operate said switches in response to an external input.
Claim 31
Dependent Claim
24 words
The power amplifier of claim 15, wherein said amplifier stages are designed to amplify input signals at frequencies of about 900 MHz and above.
Claim 32
Dependent Claim
116 words
A variable impedance network, comprising: a plurality of impedance matching networks, each of said impedance matching networks comprising at least one integrated reactive component, and a switching network comprising a plurality of integrated micro-electro mechanical (MEM) switches, said switching network connected to said matching networks and operable to vary the effective output impedance presented to an amplifier output connected to said switching network in accordance with the amplifier's output power level to provide impedance matching for said amplifier, said impedance matching networks and said switching network integrated together on a common substrate, said MEM switches providing lower insertion losses and thereby higher amplifier efficiency than would be provided by other types of similarly employed integratable switches.
Claim 33
Dependent Claim
116 words
A variable impedance network, comprising: a plurality of impedance matching networks, each of said impedance matching networks comprising at least one integrated reactive component, and a switching network comprising a plurality of integrated micro-electro mechanical (MEM) switches, said switching network connected to said matching networks and operable to vary the effective output impedance presented to an amplifier output connected to said switching network in accordance with the amplifier's output power level to provide impedance matching for said amplifier, said impedance matching networks and said switching network integrated together on a common substrate, said MEM switches providing lower insertion losses and thereby higher amplifier efficiency than would be provided by other types of similarly employed integratable switches.
Claim 34
Dependent Claim
29 words
The variable impedance network of claim 29, further comprising a control device connected to said switching network and arranged to operate said network in response to an external input.
Claim 35
Dependent Claim
35 words
The variable impedance network of claim 29, further comprising a variable gain amplifier having an output which is connected to said variable impedance network, said amplifier output being impedance matched by said variable impedance network.
Claim 36
Dependent Claim
47 words
The variable impedance network of claim 31, wherein said plurality of impedance matching networks and said switching network are arranged such that said switching network is operable to interconnect said matching networks to provide proper impedance matching for each of said variable gain amplifier's possible gain values.
Claim 37
Independent Claim
104 words
A method of varying the matching impedance presented to the output of a variable gain amplifier, comprising the steps of: determining a proper matching impedance for a particular output power level produced by a variable gain amplifier, operating a switching network comprising integrated micro-electro mechanical (MEM) switches to direct the output of said amplifier to selected impedance matching networks to vary the effective impedance presented to said amplifier in accordance with said output power level to achieve said proper matching impedance, each of said impedance matching networks comprising at least one reactive component which is integrated with said switching network on a common substrate.
Claim 38
Independent Claim
104 words
A method of varying the matching impedance presented to the output of a variable gain amplifier, comprising the steps of: determining a proper matching impedance for a particular output power level produced by a variable gain amplifier, operating a switching network comprising integrated micro-electro mechanical (MEM) switches to direct the output of said amplifier to selected impedance matching networks to vary the effective impedance presented to said amplifier in accordance with said output power level to achieve said proper matching impedance, each of said impedance matching networks comprising at least one reactive component which is integrated with said switching network on a common substrate.
Claim 39
Dependent Claim
32 words
The method of claim 33, wherein said step of determining a proper matching impedance is performed by a control device arranged to operate said switching network in response to an external input.
Claim 40
Dependent Claim
46 words
The power amplifier of claim 1, further comprising at least one impedance matching network connected to the output of at least one of said amplifier stages, said at least one impedance matching network integrated with said amplifier stages and said switching network on a common substrate.