Patent US5831335A successfully refreshed from Google Patents.
US5831335A
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US
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Semiconductor device contains refractory metal or metal silicide with less than 1% weight of halogen atom
Assignee: Sony Corp
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Filing: 1996-01-24
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Granted: 1998-11-03
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Expires: 2016-01-24
Abstract
Abstract A semiconductor device comprising a silicon-series material layer and a laminate structure formed on the silicon-series material layer, the laminate structure being composed of a refractory metal thin film and/or a refractory metal silicide thin film, wherein a content of a halogen atom in each of the refractory metal thin film and/or the refractory metal silicide thin film is 1% by weight or less based on an amount of each of the refractory metal thin film and/or the refractory metal silicide thin film. In accordance with the present invention, there is also provided a process of producing such a semiconductor device.
Inventors
- 👤 Takaaki Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/047; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10P; H10P70/00; H10P70/20; H10P70/23; H10P70/234; H10W20/069; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
A semiconductor device comprising: a silicon-series material layer; and a laminate structure formed on said silicon-series material layer, said laminate structure being composed of a refractory metal thin film and/or a refractory metal silicide thin film, wherein a content of a halogen atom in each of said refractory metal thin film and/or said refractory metal silicide thin film is 1% by weight or less based on an amount of each of said refractory metal thin film and/or said refractory metal silicide thin film.
Claim 2
Dependent Claim
83 words
A semiconductor device comprising: a silicon-series material layer; and a laminate structure formed on said silicon-series material layer, said laminate structure being composed of a refractory metal thin film and/or a refractory metal silicide thin film, wherein a content of a halogen atom in each of said refractory metal thin film and/or said refractory metal silicide thin film is 1% by weight or less based on an amount of each of said refractory metal thin film and/or said refractory metal silicide thin film.
Claim 3
Dependent Claim
56 words
The semiconductor device according to claim 1, wherein said content of said halogen atom in said refractory metal thin film and/or said refractory metal silicide thin film is in a range of 0.2 to 0.7% by weight based on the amount of each of said refractory metal thin film and said refractory metal silicide thin film.
Claim 4
Dependent Claim
30 words
The semiconductor device according to claim 1, further comprising a second refractory metal compound thin film disposed on said refractory metal thin film and/or said refractory metal silicide thin film.
Claim 5
Dependent Claim
56 words
The semiconductor device according to claim 1, wherein said silicon-series material layer is composed of a silicon substrate and an interlevel insulator layer formed thereon, said interlevel insulator layer has a contact hole exposing a portion of said silicon substrate, and said laminate structure is formed at least on said exposed portion of said silicon substrate.
Claim 6
Dependent Claim
45 words
The semiconductor device according to claim 1, wherein said laminate structure is formed on impurity-diffusion regions of said silicon-series material layer selectively provided at the proximity of a surface thereof or on a gate electrode provided on said silicon-series material layer, in a self-aligned manner.
Claim 7
Dependent Claim
34 words
The semiconductor device according to claim 1, wherein said refractory metal thin film and/or said refractory metal silicide thin film contain titanium as said refractory metal and a chlorine atom as said halogen atom.
Claim 8
Dependent Claim
20 words
The semiconductor device according to claim 2, wherein said refractory metal compound thin film is a titanium nitride thin film.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-02 | 2002-05-04 | 2002-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-02 | 2006-05-04 | 2006-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-02 | 2010-05-04 | 2010-11-03 | $7700.00 | Window Closed / Lapsed |