Patent US5827751A successfully refreshed from Google Patents.
US5827751A
Expired / Lapsed
US
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Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically
Assignee: Picogiga SA
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Filing: 1996-03-01
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Granted: 1998-10-27
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Expires: 2016-03-01
Abstract
Abstract The method is characterized by steps consisting in: a) producing a substrate of GaAs or of InP, b) growing epitaxially on said substrate a separating layer of AlGaAs or of AlInAs that is aluminum-rich, c) growing epitaxially on said separating layer an active layer including aluminum-rich material, d) making a set of components by etching and metallization, e) applying a protective layer of a passivation material or of a photosensitive resin, f) selectively etching said protective layer so as to bare the separating layer between the components, g) fixing a common support plate on the assembly so as to hold the components together mechanically, and h) dissolving the material of the separating layer by the chemical action of a solvent on the bared regions, while leaving intact the other materials so as to separate the substrate from the components without dissolving the substrate.
Inventors
- 👤 Linh T. Nuyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:46
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P72/743; H10P72/7434
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
216 words
A method of making semiconductor components, comprising the following steps: a) producing a substrate of binary or ternary III-V semiconductor material that is not dissolvable by a chemical action; b) epitaxially growing on said substrate a separating layer of ternary III-V semiconductor material having a molar fraction of aluminum of at least 40% and an atomic lattice compatible with that of the substrate that is dissolvable by the chemical action; c) epitaxially growing on said separating layer an active layer of binary III-V semiconductor material or ternary III-V semiconductor material having an aluminum molar fraction of at least 300%, said active layer having an atomic lattice compatible with that of the separating layer; d) making a set of semiconductor components by etching and metallizing said active layer, which exposes areas of the separating layer; e) applying a protective layer of a material resistant to the chemical action on said set of components and said exposed areas; f) etching said protective layer so as to bare the separating layer in areas between said components or between groups of said components to form an assembly; g) fixing a common support plate on the assembly, thereby holding the components together mechanically; and h) dissolving the separating layer by the chemical action, which frees, but does not dissolve, the substrate.
Claim 2
Independent Claim
216 words
A method of making semiconductor components, comprising the following steps: a) producing a substrate of binary or ternary III-V semiconductor material that is not dissolvable by a chemical action; b) epitaxially growing on said substrate a separating layer of ternary III-V semiconductor material having a molar fraction of aluminum of at least 40% and an atomic lattice compatible with that of the substrate that is dissolvable by the chemical action; c) epitaxially growing on said separating layer an active layer of binary III-V semiconductor material or ternary III-V semiconductor material having an aluminum molar fraction of at least 300%, said active layer having an atomic lattice compatible with that of the separating layer; d) making a set of semiconductor components by etching and metallizing said active layer, which exposes areas of the separating layer; e) applying a protective layer of a material resistant to the chemical action on said set of components and said exposed areas; f) etching said protective layer so as to bare the separating layer in areas between said components or between groups of said components to form an assembly; g) fixing a common support plate on the assembly, thereby holding the components together mechanically; and h) dissolving the separating layer by the chemical action, which frees, but does not dissolve, the substrate.
Claim 3
Dependent Claim
39 words
The method of claim 1, further including a step of: i) depositing metallization on the rear face of the active layer of the components or groups of components, which rear face has been uncovered by removal of the substrate.
Claim 4
Dependent Claim
23 words
The method of claim 2, further including a step of: j) separating the components or groups of components from said common support plate.
Claim 5
Dependent Claim
28 words
The method according to claim 3, further including a step of: k) fixing the rear faces of the components or groups of components on a common support member.
Claim 6
Dependent Claim
20 words
The method of claim 4, wherein said common support plate, said common support member, or both carry component interconnection lines.
Claim 7
Dependent Claim
25 words
The method of claim 4, wherein said common support plate, said common support member, or both is optically transparent and the components are optoelectronic components.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-26 | 2002-04-27 | 2002-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-26 | 2006-04-27 | 2006-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-26 | 2010-04-27 | 2010-10-27 | $7700.00 | Window Closed / Lapsed |