← Back to Patent Explorer
US5825227A Expired / Lapsed US ⏱️ 0.0 years remaining

Switching circuit at high frequency with low insertion loss

Assignee: Sony Corp
•
Filing: 1996-01-18
•
Granted: 1998-10-20
•
Expires: 2016-01-18
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract In a switching circuit, low insertion loss and enough isolation can be ensured at a desired frequency at the same time. An inductor is externally connected in parallel with the path between the drain and source of each of field-effect transistors built in a switching integrated circuit, and the inductor and the OFF capacitance of the field-effect transistor are made to generate parallel resonance. At this time, by suitably adjusting the inductance, low insertion loss and enough isolation are ensured at a desired frequency at the same time.

Inventors

  • 👤 Kazumasa Kohama
  • 👤 Kazuto Kitakubo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 07:38
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/693; H04; H04B; H04B1/00; H04B1/38; H04B1/40; H04B1/44; H04B1/48

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 113 words
A switching circuit comprising: first, second and third input/output terminals, a first field-effect transistor having drain and source terminals connected to said first and second input/output terminals respectively, a second field-effect transistor having drain and source terminals connected to said first and third input/output terminals respectively, and first and second impedance elements connected to gate terminals of said first and second field-effect transistors respectively; and first and second inductors connecting said first and second input/output terminals to each other and said first and third input/output terminals to each other respectively; and a third, fourth and fifth impedance elements connected between a bias voltage source and said first, second and third input/output terminals respectively.
Claim 2
Dependent Claim 113 words
A switching circuit comprising: first, second and third input/output terminals, a first field-effect transistor having drain and source terminals connected to said first and second input/output terminals respectively, a second field-effect transistor having drain and source terminals connected to said first and third input/output terminals respectively, and first and second impedance elements connected to gate terminals of said first and second field-effect transistors respectively; and first and second inductors connecting said first and second input/output terminals to each other and said first and third input/output terminals to each other respectively; and a third, fourth and fifth impedance elements connected between a bias voltage source and said first, second and third input/output terminals respectively.
Claim 3
Dependent Claim 39 words
The switching circuit according to claim 1, wherein said first and second field-effect transistors and said first and second impedance elements are formed as an integrated circuit and said first and second inductors are provided outside said integrated circuit.
Claim 4
Dependent Claim 33 words
The switching circuit according to claim 1, further comprising first and second control signals supplied to said gate terminals of said first and second transistors through said first and second impedance elements respectively.
Claim 5
Dependent Claim 34 words
The switching circuit according to claim 3, wherein said first and second inductors each have an inductance which is selected in response to a frequency of said first or second control voltage signal respectively.
Claim 6
Dependent Claim 32 words
The switching circuit according to claim 1, wherein one or more field-effect transistors are connected in series between one of said first and second field-effect transistors and one of said input/output terminals.
Claim 7
Dependent Claim 18 words
The switching circuit according to claim 1, wherein said first and second field-effect transistors are junction field-effect transistors.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-10-19 2002-04-20 2002-10-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-10-19 2006-04-20 2006-10-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-10-19 2010-04-20 2010-10-20 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag