Method of writing data to a single transistor type ferroelectric memory

Claim 1

A method of writing data to a single transistor type ferroelectric memory, wherein in the writing of data to a single transistor type ferroelectric memory having a plurality of single crystal semiconductor thin films of mutually parallel stripe-like pnp or npn structure formed in columns on an insulated substrate, a ferroelectric thin film deposited thereon so as to cover at least the semiconductor stripe structure, and a plurality of mutually parallel stripe-like conducting electrodes deposited on top of this layer in a direction approximately perpendicular to the plurality of stripe-like semiconductor thin films, and the transistors formed at the intersections of the semiconductor stripes and the stripe-like conducting electrodes as respective single memory cells, then when V is the writing voltage, the stripe-like conducting electrodes are row electrodes, and the semiconductor stripes are column electrodes, said writing method includes a first procedure and a successive second procedure based on V/3 rule, comprising: in said first procedure, when a voltage of +V is applied to the row electrode of the cell being observed, while a voltage of zero is applied to the column electrode, and voltages of +V/3 are applied to the other row electrodes, and voltages of +(2/3)V are applied to the other column electrodes, then in said second procedure, a voltage of zero is applied to the row electrode of the cell being observed, while a voltage of +V/3 is applied to the column electrode, and voltages of +V/3 are applied to the other row electrodes, and voltages of zero are applied to the other column electrodes, and in said first procedure, when a voltage of -V is applied to the row electrode of the cell being observed, while a voltage of zero is applied to the column electrode, and voltages of -V/3 are applied to the other row electrodes, and voltages of -(2/3)V are applied to the other column electrodes, then in said second procedure, a voltage of zero is applied to the row electrode of the cell being observed, while a voltage of -V/3 is applied to the column electrode, and voltage of -V/3 are applied to the other row electrodes, and voltages of zero are applied to the other column electrodes.

Claim 2

A method of writing data to a single transistor type ferroelectric memory, wherein in the writing of data to a single transistor type ferroelectric memory having a plurality of single crystal semiconductor thin films of mutually parallel stripe-like pnp or npn structure formed in columns on an insulated substrate, a ferroelectric thin film deposited thereon so as to cover at least the semiconductor stripe structure, and a plurality of mutually parallel stripe-like conducting electrodes deposited on top of this layer in a direction approximately perpendicular to the plurality of stripe-like semiconductor thin films, and the transistors formed at the intersections of the semiconductor stripes and the stripe-like conducting electrodes as respective single memory cells, then when V is the writing voltage, the stripe-like conducting electrodes are row electrodes, and the semiconductor stripes are column electrodes, said writing method includes a first procedure and a successive second procedure based on V/3 rule, comprising: in said first procedure, when a voltage of +V is applied to the row electrode of the cell being observed, while a voltage of zero is applied to the column electrode, and voltages of +V/3 are applied to the other row electrodes, and voltages of +(2/3)V are applied to the other column electrodes, then in said second procedure, a voltage of zero is applied to the row electrode of the cell being observed, while a voltage of +V/3 is applied to the column electrode, and voltages of +V/3 are applied to the other row electrodes, and voltages of zero are applied to the other column electrodes, and in said first procedure, when a voltage of -V is applied to the row electrode of the cell being observed, while a voltage of zero is applied to the column electrode, and voltages of -V/3 are applied to the other row electrodes, and voltages of -(2/3)V are applied to the other column electrodes, then in said second procedure, a voltage of zero is applied to the row electrode of the cell being observed, while a voltage of -V/3 is applied to the column electrode, and voltage of -V/3 are applied to the other row electrodes, and voltages of zero are applied to the other column electrodes.