Semiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltage

Claim 2

A semiconductor device comprising: element forming regions in which to form semiconductor elements at a semiconductor substrate; a patterned isolation region for defining said element forming regions at said semiconductor substrate; a field shield isolation structure formed in said isolation region for electrically isolating said semiconductor elements formed in said element forming region from one another; and a filtering capacitor, formed on a part of said isolation structure, for removing noise in a power supply line for the semiconductor device, said filtering capacitor including a lower electrode formed on said field shield isolation structure, an upper electrode, and a dielectric layer formed between said lower electrode and upper electrode and having at least an oxide film and a nitride film, one of said upper and lower electrodes being formed on said dielectric layer for connection with said power supply line.

Claim 3

A semiconductor device according to claim 1, wherein said dielectric layer has at least an ONO (oxide-nitride-oxide) film.

Claim 4

A semiconductor device according to claim 1, wherein said dielectric layer includes an oxide film and an ONO film formed on said oxide film.

Claim 5

A semiconductor device according to claim 1, where first electrically conducting films, a dielectric layer, a second electrically conducting film are formed in said element forming regions, said first conducting films being at a same film-formation-step level as and being separate from said lower electrode of said filtering capacitor, said dielectric layer being formed on said first conducting films and including an oxide film and a nitride film, and said second conducting film being arranged at a same film-formation-step level as and being separated from said upper electrode of said filtering capacitor.

Claim 6

A semiconductor device according to claim 4, wherein each of said first conducting films serves as a lower electrode of an information storage capacitor and said second conducting film services as an upper electrode of said information storage capacitor, the lower electrode of said information storage capacitor and the upper electrode of said storage capacitor are arranged opposite to each other across said dielectric layer, said filtering capacitor having a breakdown voltage higher than that of said information storage capacitor.

Claim 7

A semiconductor device according to claim 5, wherein said dielectric layer is an ONO film.

Claim 8

A semiconductor device according to claim 5, wherein transfer gate transistors are formed in said element forming regions, the lower electrode of each of said information storage capacitors is electrically connected to one of a pair of source/drain regions of said transfer gate transistor.

Claim 9

A semiconductor device according to claim 5, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 10

A semiconductor according to claim 8, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 11

A semiconductor device according to claim 4, wherein each of said first conducting films serves as a floating gate of a non-volatile memory cell transistor, said second conducting film is patterned to provide a control gate of said non-volatile memory cell transistor, and said floating gate and said control gate are arranged opposite to each other across said dielectric layer.

Claim 12

A semiconductor device according to claim 10, wherein said dielectric layer is an ONO film.

Claim 13

A semiconductor device according to claim 4, wherein said dielectric layer is an ONO film.

Claim 14

A semiconductor device according to claim 4, wherein the lower electrode of said filter capacitor and said first conducting films include the same material, the upper electrode of said filtering capacitor and said second conducting film include the same material, and said dielectric layer of said filtering capacitor and said dielectric layer of said storage capacitor include the same material.

Claim 15

A semiconductor device according to claim 4, wherein each of said first conducting films serves as a first lower electrode of an information storage capacitor, a second lower electrode is formed on each of said first lower electrodes to cooperate therewith, said second conducting film serves as an upper electrode of said information storage capacitor, and said second lower electrode and said upper electrode of said information storage capacitor are arranged opposite to each other across said dielectric layer.

Claim 16

A semiconductor device according to claim 14, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 17

A semiconductor according to claim 15, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 18

A semiconductor device according to claim 14, wherein an insulating film is formed between said first lower electrode and said second lower electrode of said information storage capacitor, and said first lower electrode and said second lower electrode are connected through a contact hole formed in said insulating film.

Claim 19

A semiconductor device according to claim 17, wherein said insulating film is an oxide film.

Claim 20

A semiconductor device according to claim 1, wherein: first electrically conducting films, a dielectric layer and a second electrically conducting film are formed in said element forming regions, each of said first conducting films being arranged at the same film-formation-step level as and being separated from said lower electrode of said filtering capacitor, said dielectric layer including said oxide film and a nitride film formed on said first conducting film, said second conducting film being arranged at the same film-formation-step level as and being separated from the upper electrode of said filtering capacitor; each of said first conducting films serves as a first lower electrode of an information storage capacitor and a second lower electrode is formed on said each first lower electrode so that said first and second lower electrodes cooperate to serve as a lower electrode of said information storage capacitor while said second conducting film serves as an upper electrode and the upper electrode of said storage capacitor being arranged opposite to each other across the dielectric layer; an oxide film is provided on the lower electrode of said filtering capacitor, said dielectric layer is formed on said oxide film, and the upper electrode of said filtering capacitor is formed on the dielectric layer of said filtering capacitor; and an oxide film made of the same material as said oxide film of said filtering capacitor is arranged at the same film-formation-step level as said oxide film of said filtering capacitor and is located between said first lower electrode and said second lower electrode of said information storage capacitor, and said first and second lower electrodes are connected through a contact hole formed in said oxide film for said information storage capacitor.

Claim 21

A semiconductor device according to claim 1, wherein first electrically conducting films, a dielectric layer, a second electrically conducting film are formed in said element forming regions, said first conducting films being made of the same material as that of and being separated from said lower electrode of said filtering capacitor, said dielectric layer being formed on said first conducting films and including an oxide film and a nitride film, and said second conducting film being made of the same material as that of and being separated from said upper electrode of said filtering capacitor.

Claim 22

A semiconductor device according to claim 20, wherein each of said first conducting films serves as a lower electrode of an information storage capacitor and said second conducting film serves as an upper electrode of said information storage capacitor, the lower electrode of said information storage capacitor and the upper electrode of said storage capacitor are arranged opposite to each other across said dielectric layer, said filtering capacitor having a breakdown voltage higher than that of said information storage capacitor.

Claim 23

A semiconductor device according to claim 21, wherein said dielectric layer is an ONO film.

Claim 24

A semiconductor device according to claim 21, wherein transfer gate transistors are formed in said element forming regions, the lower electrode of each of said information storage capacitors is electrically connected to one of a pair of source/drain regions of said transfer gate transistor.

Claim 25

A semiconductor device according to claim 21, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 26

A semiconductor according to claim 24, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 27

A semiconductor device according to claim 20, wherein each of said first conducting films serves as a floating gate of a non-volatile memory cell transistor, said second conducting film is patterned to provide a control gate of said non-volatile memory cell transistor, and said floating gate and said control gate are arranged opposite to each other across said dielectric layer.

Claim 28

A semiconductor device according to claim 26, wherein said dielectric layer is an ONO film.

Claim 29

A semiconductor device according to claim 20, wherein said dielectric layer is an ONO film.

Claim 30

A semiconductor device according to claim 20, wherein the lower electrode of said filter capacitor and said first conducting films include the same material, the upper electrode of said filtering capacitor and said second conducting film include the same material, and said dielectric layer of said filtering capacitor and said dielectric layer of said storage capacitor include the same material.

Claim 31

A semiconductor device according to claim 20, wherein each of said first conducting films serves as a first lower electrode of an information storage capacitor, a second lower electrode is formed on each of said first lower electrodes to cooperate therewith, said second conducting film serves as an upper electrode of said information storage capacitor, and said second lower electrode and said upper electrode of said information storage capacitor are arranged opposite to each other across said dielectric layer.

Claim 32

A semiconductor device according to claim 30, wherein an insulating film is formed between said first lower electrode and said second lower electrode of said information storage capacitor, and said first lower electrode and said second lower electrode are connected through a contact hole formed in said insulating film.

Claim 33

A semiconductor device according to claim 30, wherein an insulating film is formed between said first lower electrode and said second lower electrode of said information storage capacitor, and said first lower electrode and said second lower electrode are connected through a contact hole formed in said insulating film.

Claim 34

A semiconductor device according to claim 32, wherein said insulating film is an oxide film.

Claim 35

A semiconductor device according to claim 30, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 36

A semiconductor according to claim 34, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 37

A semiconductor device comprising: element forming regions in which to form semiconductor elements at a semiconductor substrate; a patterned isolation region for defining said element forming regions at said semiconductor substrate; an insulating material formed in said isolation region for electrically isolating said semiconductor elements formed in said element forming region from one another; and a filtering capacitor, formed on a part of said insulating material, for removing noise in a power supply line for the semiconductor device, said filtering capacitor including a lower electrode formed on said insulating material, an upper electrode, and a dielectric layer formed between said lower electrode and upper electrode and having at least an oxide film and a nitride film, one of said upper and lower electrodes being formed on said dielectric layer for connection with said power supply line.

Claim 38

A semiconductor device comprising: element forming regions in which to form semiconductor elements at a semiconductor substrate; a patterned isolation region for defining said element forming regions at said semiconductor substrate; an insulating material formed in said isolation region for electrically isolating said semiconductor elements formed in said element forming region from one another; and a filtering capacitor, formed on a part of said insulating material, for removing noise in a power supply line for the semiconductor device, said filtering capacitor including a lower electrode formed on said insulating material, an upper electrode, and a dielectric layer formed between said lower electrode and upper electrode and having at least an oxide film and a nitride film, one of said upper and lower electrodes being formed on said dielectric layer for connection with said power supply line.

Claim 39

A semiconductor device according to claim 36, wherein said dielectric layer has at least an ONO (oxide-nitride-oxide) film.

Claim 40

A semiconductor device according to claim 36, wherein said dielectric layer includes an oxide film and an ONO film formed on said oxide film.

Claim 41

A semiconductor device according to claim 36, wherein first electrically conducting films, a dielectric layer, a second electrically conducting film are formed in said element forming regions, said first conducting films being at a same film-formation-step level as and being separated from said lower electrode of said filtering capacitor, said dielectric layer being formed on said first conducting films and including an oxide film and a nitride film, and said second conducting film being arranged at a same film-formation-step level as and being separated from said upper electrode of said filtering capacitor.

Claim 42

A semiconductor device according to claim 39, wherein each of said first conducting films serves as a lower electrode of an information storage capacitor and said second conducting film serves as an upper electrode of said information storage capacitor, the lower electrode of said storage capacitor and the upper electrode of said information storage capacitor are arranged opposite to each other across said dielectric layer, said filtering capacitor having a breakdown voltage higher than that of said information storage capacitor.

Claim 43

A semiconductor device according to claim 40, wherein said dielectric layer is an ONO film.

Claim 44

A semiconductor device according to claim 40, wherein transfer gate transistors are formed in said element forming regions, the lower electrode of each of said information storage capacitors is electrically connected to one of a pair of source/drain regions of said transfer gate transistor.

Claim 45

A semiconductor device according to claim 40, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 46

A semiconductor according to claim 43, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 47

A semiconductor device according to claim 39, wherein each of said first conducting films serves as a floating gate of a non-volatile memory cell transistor, said second conducting film is patterned to provide a control gate of said non-volatile memory cell transistor, and said floating gate and said control gate are arranged opposite to each other across said dielectric layer.

Claim 48

A semiconductor device according to claim 45, wherein said dielectric layer is an ONO film.

Claim 49

A semiconductor device according to claim 39, wherein said dielectric layer is a ONO film.

Claim 50

A semiconductor device according to claim 39, wherein the lower electrode of said filter capacitor and said first conducting films include the same material, the upper electrode of said filtering capacitor and said second conducting film include the same material, and said dielectric layer of said filtering capacitor and said dielectric layer of said storage capacitor include the same material.

Claim 51

A semiconductor device according to claim 39, wherein each of said first conducting films serves as a first lower electrode of an information storage capacitor, a second lower electrode is formed on each of said first lower electrodes to cooperate therewith, said second conducting film serves as an upper electrode of said information storage capacitor, and said second lower electrode and said upper electrode of said information storage capacitor are arranged opposite to each other across said dielectric layer.

Claim 52

A semiconductor device according to claim 49, wherein an insulating film is formed between said first lower electrode and said second lower electrode of said information storage capacitor, and said first lower electrode and said second lower electrode are connected through a contact hole formed in said insulating film.

Claim 53

A semiconductor device according to claim 50, wherein said insulating film is an oxide film.

Claim 54

A semiconductor device according to claim 49, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 55

A semiconductor according to claim 52, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 56

A semiconductor device according to claim 36 wherein: first electrically conducting films, a dielectric layer and a second electrically conducting film are formed in said element forming regions, each of said first conducting films being arranged at the same film-formation-step level as and being separated from said lower electrode of said filtering capacitor, said dielectric layer including said oxide film and a nitride film formed on said first conducting film, said second conducting film being arranged at the same film-formation-step level as and being separated from the upper electrode of said filtering capacitor; each of said first conducting films serves as a first lower electrode of an information storage capacitor and a second lower electrode is formed on said each first lower electrode so that said first and second lower electrodes cooperate to serve as a lower electrode of said information storage capacitor while said second conducting film serves as an upper electrode of said information storage capacitor, and the lower electrode and the upper electrode of said storage capacitor being arranged opposite to each other across the dielectric layer; an oxide film is provided on the lower electrode of said filtering capacitor, said dielectric layer is formed on said oxide film, and the upper electrode of said filtering capacitor is formed on the dielectric layer of said filtering capacitor; and an oxide film made of the same material as said oxide film of said filtering capacitor is arranged at the same film-formation-step level as said oxide film of said filtering capacitor and is located between said first lower electrode and said second lower electrode of said information storage capacitor, and said first and second lower electrodes are connected through a contact hole formed in said oxide film for said information storage capacitor.

Claim 57

A semiconductor device according to claim 36, wherein first electrically conducting films, a dielectric layer, a second electrically conducting film are formed in said element forming regions, said first conducting films being made of the same material as that of and being separated from said lower electrode of said filtering capacitor, said dielectric layer being formed on said first conducting films and including an oxide film and a nitride film, and said second conducting film being made of the same material as that of and being separated from said upper electrode of said filtering capacitor.

Claim 58

A semiconductor device according to claim 55, wherein each of said first conducting films serves as a lower electrode of an information storage capacitor and said second conducting film serves as an upper electrode of said information storage capacitor, the lower electrode of said information storage capacitor and the upper electrode of said storage capacitor are arranged opposite to each other across said dielectric layer, said filtering capacitor having a breakdown voltage higher than that of said information storage capacitor.

Claim 59

A semiconductor device according to claim 56, wherein said dielectric layer is an ONO film.

Claim 60

A semiconductor device according to claim 56, wherein transfer gate transistors are formed in said element forming regions, the lower electrode of each of said information storage capacitors is electrically connected to one of a pair of source/drain regions of said transfer gate transistor.

Claim 61

A semiconductor device according to claim 56, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 62

A semiconductor according to claim 59, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.

Claim 63

A semiconductor device according to claim 55, wherein each of said first conducting films serves as a floating gate of a non-volatile memory cell transistor, said second conducting film is patterned to provide a control gate of said non-volatile memory cell transistor, and said floating gate and said control gate are arranged opposite to each other across said dielectric layer.

Claim 64

A semiconductor device according to claim 61, wherein said dielectric layer is an ONO film.

Claim 65

A semiconductor device according to claim 55, wherein the lower electrode of said filter capacitor and said first conducting films include the same material, the upper electrode of said filtering capacitor and said second conducting film include the same material, and said dielectric layer of said filtering capacitor and said dielectric layer of said storage capacitor include the same material.

Claim 66

A semiconductor device according to claim 55, wherein each of said first conducting films serves as a first lower electrode of an information storage capacitor, a second lower electrode is formed on each of said first lower electrodes to cooperate therewith, said second conducting film serves as an upper electrode of said information storage capacitor, and said second lower electrode and said upper electrode of said information storage capacitor are arranged opposite to each other across said dielectric layer.

Claim 67

A semiconductor device according to claim 64, wherein an insulating film is formed between said first lower electrode and said second lower electrode of said information storage capacitor, and said first lower electrode and said second lower electrode are connected through a contact hole formed in said insulating film.

Claim 68

A semiconductor device according to claim 65, wherein said insulating film is an oxide film.

Claim 69

A semiconductor device according to claim 64, wherein the dielectric layer of said filter capacitor has a thickness larger than that of said information storage capacitor.

Claim 70

A semiconductor according to claim 67, wherein the dielectric layer of said filter capacitor includes an ONO film and an oxide film formed thereon, and the dielectric layer of said information storage capacitor includes an ONO film.