US5812364A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor
Assignee: Mitsubishi Electric Corp
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Filing: 1997-01-15
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Granted: 1998-09-22
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Expires: 2017-01-15
Abstract
Abstract An MIM capacitor includes a lower electrode; a first insulating film disposed on the lower electrode; a second insulating film disposed on the first insulating film and having a first opening exposing a portion of the surface of the first insulating film on the lower electrode, the first opening having a perimeter; a third insulating film disposed on the second insulating film and having a second opening exposing a portion of the surface of the second insulating film, the second opening having a perimeter that surrounds the perimeter of the first opening on the second insulating film; and an upper electrode disposed on the first insulating film through the first opening and extending onto the second insulating film.
Inventors
- 👤 Tomoki Oku
- 👤 Takahide Ishikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:43
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P50/00; H10P50/73; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
100 words
A capacitor comprising: a lower electrode; a first insulating film disposed on the lower electrode and comprising a silicon nitride film having an etching rate; a second insulating film disposed on the first insulating film and comprising a second silicon nitride film having an etching rate higher than the etching rate of the first insulating film, the second insulating film having an opening exposing a portion of the first insulating film on the lower electrode; and an upper electrode disposed on the first insulating film in the opening in the second insulating film and extending on the second insulating film.
Claim 2
Dependent Claim
100 words
A capacitor comprising: a lower electrode; a first insulating film disposed on the lower electrode and comprising a silicon nitride film having an etching rate; a second insulating film disposed on the first insulating film and comprising a second silicon nitride film having an etching rate higher than the etching rate of the first insulating film, the second insulating film having an opening exposing a portion of the first insulating film on the lower electrode; and an upper electrode disposed on the first insulating film in the opening in the second insulating film and extending on the second insulating film.
Claim 3
Dependent Claim
18 words
The capacitor of claim 1 wherein the second insulating film contains more hydrogen than the first insulating film.
Claim 4
Dependent Claim
20 words
The capacitor of claim 1 comprising a wiring layer disposed on the upper electrode and electrically contacting the upper electrode.
Claim 5
Dependent Claim
112 words
A capacitor comprising: a lower electrode; a first insulating film disposed on the lower electrode; a second insulating film disposed on the first insulating film and having a first opening exposing a portion of the first insulating film on the lower electrode, the first opening having a perimeter; a third insulating film disposed on the second insulating film and having a second opening exposing a portion of the second insulating film, the second opening having a second perimeter that surrounds the perimeter of the first opening on the second insulating film; and an upper electrode disposed on the first insulating film in the first opening and extending onto the second insulating film.
Claim 6
Dependent Claim
112 words
A capacitor comprising: a lower electrode; a first insulating film disposed on the lower electrode; a second insulating film disposed on the first insulating film and having a first opening exposing a portion of the first insulating film on the lower electrode, the first opening having a perimeter; a third insulating film disposed on the second insulating film and having a second opening exposing a portion of the second insulating film, the second opening having a second perimeter that surrounds the perimeter of the first opening on the second insulating film; and an upper electrode disposed on the first insulating film in the first opening and extending onto the second insulating film.
Claim 7
Dependent Claim
32 words
The capacitor of claim 1 wherein said second perimeter of the second opening in the third insulating film is larger than the perimeter of the first opening in the second insulating film.
Claim 8
Dependent Claim
52 words
The capacitor of claim 4 wherein the first insulating film is a silicon nitride film having a silicon to nitrogen composition ratio of 3:4, the second insulating film is a second silicon nitride film having a high proportion of silicon than nitrogen, and the third insulating film is a silicon oxide film.
Claim 9
Dependent Claim
25 words
The capacitor of claim 4 wherein the etching rate of the third insulating film is higher than the etching rate of the second insulating film.
Claim 10
Dependent Claim
20 words
The capacitor of claim 4 comprising a wiring layer disposed on the upper electrode and electrically contacting the upper electrode.
References Cited (Backward Citations)
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US5142639A
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US5349494A
Cited
US5406447A
Cited
JPH05299581A
Cited
JPH07326712A
Cited
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Cited
US5731216A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |