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US5811318A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for manufacturing a liquid crystal display

Assignee: Samsung Display Co Ltd
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Filing: 1996-12-20
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Granted: 1998-09-22
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Expires: 2016-12-20
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Abstract

Abstract A method for manufacturing a liquid crystal display which reduces the number of photolithography processes is provided. The method includes the steps of forming a gate electrode and a gate pad by depositing a first metal film and a second metal film on a substrate of a TFT area and a gate-pad connecting area, respectively, in the described order, by a first photolithography process, forming an insulating film on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area by a second photolithography process, forming a source electrode/drain electrode and pad electrode composed of a third metal film using a third photolithography process in the TFT portion and pad portion, respectively, forming a passivation film pattern which exposes a portion of the drain electrode, a portion of the gate pad, and a portion of the pad electrode by a fourth photolithography process, exposing the first metal film by etching the second metal film which constitutes the gate pad using the passivation film pattern as a mask, and forming a pixel electrode connected to the drain electrode of the TFT area for connecting the gate pad of the gate-pad connecting area to the pad electrode of the pad area using a fifth photolithography process. Therefore, it is possible to reduce the number of photolithography processes, to improve the manufacturing yield, and to suppress growth of a hillock of an Al film.

Inventors

  • 👤 Young-chan Kweon

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 11:18
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13458; G02F1/1343; G02F1/13439; G02F1/136; G02F1/1362; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; H10D86/40; H10D86/441; H10D86/60

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 216 words
A method for manufacturing a liquid crystal display, comprising the steps of: forming a gate electrode and a gate pad by depositing a first metal film and a second metal film over a substrate in a TFT area and a gate-pad connecting area, respectively, by a first photolithography process; forming an insulating film over the gate electrode and the gate pad; forming a semiconductor film pattern over the insulating film in the TFT area by a second photolithography process; forming a source electrode/drain electrode and pad electrode in the TFT portion and pad portion, respectively, using a third photolithography process, the source electrode/drain electrode and pad electrode all being comprised of a third metal film; forming a passivation film pattern by a fourth photolithography process, the passivation film exposing a portion of the drain electrode, a portion of the gate pad, and a portion of the pad electrode; exposing the first metal film by etching a portion of the second metal film that comprises the gate pad using the passivation film pattern as a mask; and forming a pixel electrode connected to the drain electrode of the TFT area by a fifth photolithography process, the pixel electrode acting to connect the gate pad of the gate-pad connecting area to the pad electrode of the pad area.
Claim 2
Independent Claim 216 words
A method for manufacturing a liquid crystal display, comprising the steps of: forming a gate electrode and a gate pad by depositing a first metal film and a second metal film over a substrate in a TFT area and a gate-pad connecting area, respectively, by a first photolithography process; forming an insulating film over the gate electrode and the gate pad; forming a semiconductor film pattern over the insulating film in the TFT area by a second photolithography process; forming a source electrode/drain electrode and pad electrode in the TFT portion and pad portion, respectively, using a third photolithography process, the source electrode/drain electrode and pad electrode all being comprised of a third metal film; forming a passivation film pattern by a fourth photolithography process, the passivation film exposing a portion of the drain electrode, a portion of the gate pad, and a portion of the pad electrode; exposing the first metal film by etching a portion of the second metal film that comprises the gate pad using the passivation film pattern as a mask; and forming a pixel electrode connected to the drain electrode of the TFT area by a fifth photolithography process, the pixel electrode acting to connect the gate pad of the gate-pad connecting area to the pad electrode of the pad area.
Claim 3
Dependent Claim 22 words
A method for manufacturing a liquid crystal display as recited in claim 1, wherein the first metal film comprises a refractory metal.
Claim 4
Dependent Claim 23 words
A method for manufacturing a liquid crystal display as recited in claim 1, wherein the second metal film comprises Al or an Al-alloy.
Claim 5
Dependent Claim 32 words
A method for manufacturing a liquid crystal display as recited in claim 2, wherein the first metal film comprises a material selected from the group consisting of Cr, Ta, Mo, and Ti.
Claim 6
Dependent Claim 32 words
A method for manufacturing a liquid crystal display as recited in claim 1, wherein the third metal film comprises a material selected from the group consisting of Cr, Ta, Mo, and Ti.
Claim 7
Dependent Claim 37 words
A method for manufacturing a liquid crystal display as recited in claim 1, wherein taper-etching is performed on the second metal film in the first photolithography process and then etching of the first metal film is performed.
Claim 8
Dependent Claim 25 words
A method for manufacturing a liquid crystal display as recited in claim 1, wherein the first metal film is wider than the second metal film.
Claim 9
Independent Claim 216 words
A method for manufacturing a liquid crystal display, comprising the steps of: forming a gate electrode and a gate pad by depositing a first metal film and a second metal film over a substrate of a TFT area and a pad area, respectively, by a first photolithography process; forming an insulating film over the gate electrode and the gate pad; forming a semiconductor film pattern over the insulating film in the TFT area by a second photolithography process; forming a source electrode and a drain electrode in the TFT area by a third photolithography process, the source electrode and the drain electrode comprising a third metal film; forming a passivation film pattern that exposes a portion of the drain electrode of the TFT area and a portion of the gate pad of the pad area by forming a passivation film over the source electrode and the drain electrode and performing a fourth photolithography process on the passivation film and the insulating film; exposing the first metal film of the pad area by etching the second metal film using the passivation film pattern as a mask; and forming a pixel electrode that is connected to the drain electrode of the TFT area and contacts the first metal film of the pad area by a fifth photolithography process.
Claim 10
Independent Claim 216 words
A method for manufacturing a liquid crystal display, comprising the steps of: forming a gate electrode and a gate pad by depositing a first metal film and a second metal film over a substrate of a TFT area and a pad area, respectively, by a first photolithography process; forming an insulating film over the gate electrode and the gate pad; forming a semiconductor film pattern over the insulating film in the TFT area by a second photolithography process; forming a source electrode and a drain electrode in the TFT area by a third photolithography process, the source electrode and the drain electrode comprising a third metal film; forming a passivation film pattern that exposes a portion of the drain electrode of the TFT area and a portion of the gate pad of the pad area by forming a passivation film over the source electrode and the drain electrode and performing a fourth photolithography process on the passivation film and the insulating film; exposing the first metal film of the pad area by etching the second metal film using the passivation film pattern as a mask; and forming a pixel electrode that is connected to the drain electrode of the TFT area and contacts the first metal film of the pad area by a fifth photolithography process.
Claim 11
Dependent Claim 22 words
A method for manufacturing a liquid crystal display as recited in claim 8, wherein the first metal film comprises a refractory metal.
Claim 12
Dependent Claim 23 words
A method for manufacturing a liquid crystal display as recited in claim 8, wherein the second metal film comprises Al or an Al-alloy.
Claim 13
Dependent Claim 32 words
A method for manufacturing a liquid crystal display as recited in claim 9, wherein the first metal film comprises a material selected from the group consisting of Cr, Ta, Mo, and Ti.
Claim 14
Dependent Claim 32 words
A method for manufacturing a liquid crystal display as recited in claim 8, wherein the third metal film comprises a material selected from the group consisting of Cr, Ta, Mo, and Ti.
Claim 15
Dependent Claim 36 words
A method for manufacturing a liquid crystal display as recited in claim 8, wherein taper-etching is performed on the second metal film in the first photolithography process and then etching the first metal film is performed.
Claim 16
Dependent Claim 24 words
A method for manufacturing a liquid crystal display as recited in claim 8, wherein the insulating film comprises a nitride film SiN x .
Claim 17
Dependent Claim 34 words
A method for manufacturing a liquid crystal display as recited in claim 8, wherein the insulating film comprises a double film including a nitride film SiN x and an oxide film SiO x .

References Cited (Backward Citations)

US5187604A Cited
US5359206A Cited
US5075244A Cited
US5177577A Cited
JPH05152573A Cited
JPH06188419A Cited
US5555112A Cited
US5668379A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-09-21 2002-03-23 2002-09-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-09-21 2006-03-23 2006-09-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-09-21 2010-03-23 2010-09-22 $7700.00 Window Closed / Lapsed

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