Patent US5804460A successfully refreshed from Google Patents.
US5804460A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Linewidth metrology of integrated circuit structures
Assignee: Nokia of America Corp
•
Filing: 1997-09-15
•
Granted: 1998-09-08
•
Expires: 2017-09-15
Abstract
Abstract Illustratively, the present invention includes a method of integrated circuit manufacturing which includes forming a raised topological feature upon a first substrate. A portion of the raised feature is removed, thereby exposing a cross sectional view of the raised feature with the substrate remaining substantially undamaged. The cross sectional view has a critical dimension. The critical dimension of the cross sectional view is measured using a first measuring instrument. Then the critical dimension is measured using a second measuring instrument. The measurements of the first and second measuring instruments are correlated. Then, using the second measuring instrument, raised features via plurality of second substrates are measured.
Inventors
- 👤 Jeffrey Bruce Bindell
- 👤 Dennis Earl Schrope
- 👤 Fred Anthony Stevie
- 👤 Richard J. Dare
- 👤 Larry E. Plew
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:40
CPC Classifications
H; H10; H10D; H10D84/00; H10P; H10P74/00; H10P74/23; H10P74/20; H10P74/203; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/852; Y10S977/86; Y10S977/868; Y10S977/869; Y10S977/88; Y10S977/881; Y10S977/888
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
184 words
A method of integrated circuit manufacturing comprising: forming a raised topographical feature upon a first substrate; removing a portion of said raised feature, thereby exposing a cross-section of said raised feature, said substrate remaining substantially undamaged, said cross-section having a critical dimension; measuring said critical dimension of said cross-section using a first type of measuring instrument; measuring said critical dimension of said cross-section using a second type of measuring instrument, said second type of measuring instrument for performing a non-destructive type of measurement; correlating the measurements performed by said first type of measuring instrument and said second type of measuring instrument to determine a measurement correlation function: obtaining a plurality of substrates, each containing a raised feature essentially identical in formation and topography to said first substrate raised feature; using said second type of measuring instrument, measuring raised topographical features on said plurality of substrates without removing any portion thereof; and using the measurement correlation function and the measurement from said second type of measuring instrument, converting said second type of instrument measurement into a measurement associated with the first type of measuring instrument.
Claim 2
Independent Claim
184 words
A method of integrated circuit manufacturing comprising: forming a raised topographical feature upon a first substrate; removing a portion of said raised feature, thereby exposing a cross-section of said raised feature, said substrate remaining substantially undamaged, said cross-section having a critical dimension; measuring said critical dimension of said cross-section using a first type of measuring instrument; measuring said critical dimension of said cross-section using a second type of measuring instrument, said second type of measuring instrument for performing a non-destructive type of measurement; correlating the measurements performed by said first type of measuring instrument and said second type of measuring instrument to determine a measurement correlation function: obtaining a plurality of substrates, each containing a raised feature essentially identical in formation and topography to said first substrate raised feature; using said second type of measuring instrument, measuring raised topographical features on said plurality of substrates without removing any portion thereof; and using the measurement correlation function and the measurement from said second type of measuring instrument, converting said second type of instrument measurement into a measurement associated with the first type of measuring instrument.
Claim 3
Dependent Claim
36 words
The method of claim 1 in which a metal is deposited over said raised topographical feature on said first substrate and a portion of said metal is removed together with a portion of said raised feature.
Claim 4
Dependent Claim
17 words
The method of claim 1 in which said removing step is accomplished with a focused ion beam.
Claim 5
Dependent Claim
17 words
The method of claim 2 in which said deposition step is accomplished with a focused ion beam.
Claim 6
Dependent Claim
29 words
The method of claim 1 in which said first measuring instrument is chosen from the group consisting of a high voltage scanning electron microscope and an atomic force microscope.
Claim 7
Dependent Claim
33 words
The method of claim 1 in which said raised topographical feature is formed of a material chosen from the group consisting of: photoresist, an oxide of silicon, silicon nitride, a metal and silicon.
Claim 8
Dependent Claim
14 words
The method of claim 1 in which said raised topographical feature is a gate.
Claim 9
Dependent Claim
18 words
The method of claim 1 in which said raised topographical feature is photoresist with a gate defined therein.
Claim 10
Dependent Claim
29 words
The method of claim 1 in which said first substrate is a material chosen from the group consisting of silicon, silicon nitride, an oxide of silicon, and a metal.
Claim 11
Dependent Claim
15 words
The method of claim 1 in which said first instrument is calibrated to NIST standards.
References Cited (Backward Citations)
US4221965A
Cited
US4755047A
Cited
US4766411A
Cited
US4943722A
Cited
US5029250A
Cited
US5081353A
Cited
US5229607A
Cited
US5140164A
Cited
US5106771A
Cited
GB2257514A
Cited
EP0539686A1
Cited
US5444242A
Cited
WO1994022028A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |