Patent US5804336A successfully refreshed from Google Patents.
US5804336A
Expired / Lapsed
US
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Method of forming opaque border on semiconductor photomask
Assignee: Micron Technology Inc
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Filing: 1996-08-13
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Granted: 1998-09-08
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Expires: 2016-08-13
Abstract
Abstract The present invention provides a method of fabricating photomasks having a border region and a pattern region, which may be electrically isolated. The border region may include a nontransparent region, such as an opaque chrome layer. The pattern region may include a substantially nontransparent region, such as a leaky chrome layer. The methods of the present invention include placing the photomask in an electrochemical cell and electrically connecting a portion of the photomask to an electrode, and applying a potential, thereby electrochemically transferring a layer between the electrochemical cell and the photomask.
Inventors
- 👤 J. Brett Rolfson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:31
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
55 words
A method of fabricating a photomask, comprising the steps of: forming a first pattern directly on a photomask substrate; forming a second pattern directly on a photomask substrate, said first pattern being electrically isolated from said second pattern; and electrochemically forming a layer on a selected one of said first pattern and said second pattern.
Claim 2
Independent Claim
55 words
A method of fabricating a photomask, comprising the steps of: forming a first pattern directly on a photomask substrate; forming a second pattern directly on a photomask substrate, said first pattern being electrically isolated from said second pattern; and electrochemically forming a layer on a selected one of said first pattern and said second pattern.
Claim 3
Dependent Claim
26 words
A method as claimed in claim 1 wherein said layer is deposited on said selected one of said first pattern and said second pattern by electrodeposition.
Claim 4
Dependent Claim
16 words
A method as claimed in claim 2 wherein said layer is deposited on a border region.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 1 wherein said layer is removed from said selected one of said first pattern and said second pattern by an electrochemical process.
Claim 6
Independent Claim
108 words
A method of fabricating a photomask, comprising the steps of: depositing a first layer over a substrate, said substrate having a border region and a pattern region; forming a patterned photoresist layer located over said first layer, thereby creating openings exposing portions of said first layer; etching said exposed portions of said first layer, thereby exposing portions of said substrate in both the border region and the pattern region; and placing said substrate in an electrochemical cell and applying an electrical potential to a plurality of electrodes within said cell, thereby electrochemically forming a second layer on a selected one of said border region and said pattern region.
Claim 7
Independent Claim
108 words
A method of fabricating a photomask, comprising the steps of: depositing a first layer over a substrate, said substrate having a border region and a pattern region; forming a patterned photoresist layer located over said first layer, thereby creating openings exposing portions of said first layer; etching said exposed portions of said first layer, thereby exposing portions of said substrate in both the border region and the pattern region; and placing said substrate in an electrochemical cell and applying an electrical potential to a plurality of electrodes within said cell, thereby electrochemically forming a second layer on a selected one of said border region and said pattern region.
Claim 8
Dependent Claim
27 words
A method as claimed in claim 5 wherein said second layer is deposited on said selected one of said border region and said pattern region by electrodeposition.
Claim 9
Dependent Claim
17 words
A method as claimed in claim 6 wherein said second layer is deposited on said border region.
Claim 10
Dependent Claim
25 words
A method as claimed in claim 7 wherein said step of etching comprises the step of electrically isolating said pattern region from said border region.
Claim 11
Dependent Claim
15 words
A method as claimed in claim 7 wherein said first layer comprises a phase-shifting layer.
Claim 12
Dependent Claim
15 words
A method as claimed in claim 7 wherein said first layer is a metallic material.
Claim 13
Dependent Claim
13 words
A method as claimed in claim 10 wherein said metallic material is chrome.
Claim 14
Dependent Claim
13 words
A method as claimed in claim 11 wherein said chrome is leaky chrome.
Claim 15
Dependent Claim
14 words
A method as claimed in claim 6 wherein said substrate is comprised of quartz.
Claim 16
Dependent Claim
29 words
A method as claimed in claim 5 wherein said second layer is removed from said selected one of said border region and said pattern region by an electrochemical process.
Claim 17
Dependent Claim
24 words
A method as claimed in claim 5 wherein one of said plurality of electrodes is electrically connected to a portion of said first layer.
Claim 18
Dependent Claim
21 words
A method as claimed in claim 5 wherein said electrochemical cell comprises a solution of chromic acid, sulfuric acid, and water.
Claim 19
Dependent Claim
14 words
A method as claimed in claim 7 wherein said second layer is opaque chrome.
Claim 20
Dependent Claim
13 words
A method as claimed in claim 7 wherein said substrate is substantially transparent.
Claim 21
Dependent Claim
14 words
A method as claimed in claim 7 wherein said first layer is substantially nontransparent.
Claim 22
Dependent Claim
14 words
A method as claimed in claim 7 wherein said second layer is substantially nontransparent.
Claim 23
Dependent Claim
15 words
A method as claimed in claim 20 wherein said substantially nontransparent layer is opaque chrome.
Claim 24
Dependent Claim
17 words
A method as claimed in claim 7 wherein said photomask is for use in fabricating semiconductor wafers.
Claim 25
Independent Claim
58 words
A method of fabricating a semiconductor photomask, comprising the step of: electrochemically forming a layer on a substrate, said substrate having a border region and a pattern region, said border region and said pattern region being electrically isolated from each other, said layer being electrochemically formed on a selected one of said border region and said pattern region.
Claim 26
Independent Claim
58 words
A method of fabricating a semiconductor photomask, comprising the step of: electrochemically forming a layer on a substrate, said substrate having a border region and a pattern region, said border region and said pattern region being electrically isolated from each other, said layer being electrochemically formed on a selected one of said border region and said pattern region.
Claim 27
Dependent Claim
34 words
A method as claimed in claim 23, wherein said step of electrochemically forming comprises placing said substrate in an electrochemical cell and applying an electrical potential to a plurality of electrodes within said cell.
Claim 28
Dependent Claim
16 words
A method as claimed in claim 23 wherein said layer is electrochemically deposited on said substrate.
Claim 29
Dependent Claim
16 words
A method as claimed in claim 23 wherein said layer is electrochemically removed from said substrate.
Claim 30
Dependent Claim
14 words
A method as claimed in claim 23 wherein said substrate is comprised of quartz.
Claim 31
Dependent Claim
15 words
A method as claimed in claim 23 wherein said layer is comprised of opaque chrome.
Claim 32
Dependent Claim
28 words
A method as claimed in claim 23 further comprising the step of depositing a first layer above said substrate prior to said step of electrochemically forming said layer.
Claim 33
Dependent Claim
15 words
A method as claimed in claim 29 wherein said first layer comprises a metallic material.
Claim 34
Dependent Claim
14 words
A method as claimed in claim 30 wherein said metallic material comprises leaky chrome.
Claim 35
Dependent Claim
15 words
A method as claimed in claim 29 wherein said first layer is a phase-shifting layer.
Claim 36
Dependent Claim
14 words
A method as claimed in claim 23 wherein said layer comprises a metallic material.
Claim 37
Dependent Claim
35 words
A photomask used in fabrication of semiconductor wafers, comprising: a transparent substrate; a layer of phase-shifting material formed on said substrate; and a layer of opaque material electrochemical formed on said layer of phase-shifting material.
Claim 38
Dependent Claim
35 words
A photomask used in fabrication of semiconductor wafers, comprising: a transparent substrate; a layer of phase-shifting material formed on said substrate; and a layer of opaque material electrochemical formed on said layer of phase-shifting material.
Claim 39
Dependent Claim
22 words
An apparatus as claimed in claim 34 wherein said layer of opaque material is located within a border region of said substrate.
Claim 40
Dependent Claim
20 words
An apparatus as claimed in claim 34 wherein said substrate includes a border region electrically isolated from a pattern region.
Claim 41
Dependent Claim
49 words
A phase-shifting photomask comprising: a substrate having a border region and a pattern region; a first layer located over said substrate in both said border region and said pattern region; and a second layer located over said first layer in said border region, said second layer formed by electrodeposition.
Claim 42
Dependent Claim
49 words
A phase-shifting photomask comprising: a substrate having a border region and a pattern region; a first layer located over said substrate in both said border region and said pattern region; and a second layer located over said first layer in said border region, said second layer formed by electrodeposition.
Claim 43
Dependent Claim
15 words
A phase-shifting photomask as claimed in claim 37 wherein said second layer is opaque chrome.
Claim 44
Dependent Claim
19 words
A phase-shifting photomask as claimed in claim 37 wherein said border region is electrically isolated from said pattern region.
Claim 45
Independent Claim
115 words
A method of fabricating a photomask; comprising the steps of: depositing a layer of phase-shifting material onto a transparent substrate, said substrate having a border region and a pattern region; forming a patterned photoresist layer on said layer of phase-shifting material; said patterned photoresist layer having openings exposing portions of said layer of phase-shifting material; removing said exposed portions of said layer of phase-shifting material to create a first pattern on said border region and a second pattern on said pattern region, said first pattern and said second pattern being electrically isolated from one another; and electrochemically forming a layer of metallic material on a selected one of said first pattern and said second pattern.
Claim 46
Independent Claim
115 words
A method of fabricating a photomask; comprising the steps of: depositing a layer of phase-shifting material onto a transparent substrate, said substrate having a border region and a pattern region; forming a patterned photoresist layer on said layer of phase-shifting material; said patterned photoresist layer having openings exposing portions of said layer of phase-shifting material; removing said exposed portions of said layer of phase-shifting material to create a first pattern on said border region and a second pattern on said pattern region, said first pattern and said second pattern being electrically isolated from one another; and electrochemically forming a layer of metallic material on a selected one of said first pattern and said second pattern.
Claim 47
Dependent Claim
14 words
A method as claimed in claim 40 wherein said metallic material is opaque chrome.
Claim 48
Dependent Claim
23 words
A method as claimed in claim 40 wherein said step of electrochemically forming comprises the step of electrodepositing said layer of metallic material.
Claim 49
Dependent Claim
23 words
A method as claimed in claim 40 wherein said step of electrochemically forming comprises the step of electroremoving said layer of metallic material.
References Cited (Backward Citations)
US4451544A
Cited
US5578184A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |