US5801100A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroless copper plating method for forming integrated circuit structures
Assignee: Transpacific IP Ltd
•
Filing: 1997-03-07
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Granted: 1998-09-01
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Expires: 2017-03-07
Abstract
Abstract A method for fabricating a copper containing integrated circuit structure within an integrated circuit, and the copper containing integrated circuit structure formed through the method. There is first provided a substrate layer. There is then formed through a first electroless plating method a nickel containing conductor layer over the substrate layer. There is then activated the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer. Finally, there is then formed through a second electroless plating method a copper containing conductor layer upon the nickel containing conductor layer. Optionally, there may be formed a polysilicon layer over the substrate prior to forming the nickel containing conductor layer over the substrate, where the nickel containing conductor layer is formed upon the polysilicon layer. Optionally, there may also be formed a second nickel containing conductor layer upon the copper containing conductor layer. The method is useful in forming copper containing integrated circuit inductor structures within integrated circuits.
Inventors
- 👤 Chwan-Ying Lee
- 👤 Tzuen-Hsi Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 08:54
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/20; H10P; H10P14/00; H10P14/40; H10P14/46; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10W20/039; H10W20/063; H05; H05K; H05K1/00; H05K1/16; H05K1/165; H05K3/00; H05K3/22; H05K3/24; H05K3/244; H05K3/46; H05K3/4644; Y; Y10; Y10S; Y10S257/00; Y10S257/903; Y10S257/904
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
61 words
A method for fabricating a copper containing integrated structure within an integrated circuit comprising: providing a substrate layer; forming a nickel containing conductor layer over the substrate layer; and forming upon the nickel containing conductor layer a copper containing conductor layer, where the copper containing conductor layer is employed within a copper containing integrated circuit inductor structure within the integrated circuit.
Claim 2
Independent Claim
61 words
A method for fabricating a copper containing integrated structure within an integrated circuit comprising: providing a substrate layer; forming a nickel containing conductor layer over the substrate layer; and forming upon the nickel containing conductor layer a copper containing conductor layer, where the copper containing conductor layer is employed within a copper containing integrated circuit inductor structure within the integrated circuit.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the substrate layer is chosen from the group of substrate layers consisting of conductor substrate layers, semiconductor substrate layers and insulator substrate layers.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the nickel containing conductor layer has a thickness of from about 1000 to about 2000 angstroms.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein the nickel containing conductor layer has a phosphorus content of from about 3.2 to about 4.8 weight percent.
Claim 6
Dependent Claim
28 words
The method of claim 1 wherein the nickel containing conductor layer serves as a barrier layer to interdiffusion of the copper containing conductor layer with the substrate layer.
Claim 7
Independent Claim
79 words
A method for fabricating a copper containing integrated circuit structure within an integrated circuit comprising: providing a substrate layer; forming over the substrate layer a polysilicon layer; forming through a first electroless plating method a nickel containing conductor layer upon the polysilicon layer; activating the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer; and forming through a second electroless plating method a copper containing conductor layer upon the nickel conductor layer.
Claim 8
Independent Claim
79 words
A method for fabricating a copper containing integrated circuit structure within an integrated circuit comprising: providing a substrate layer; forming over the substrate layer a polysilicon layer; forming through a first electroless plating method a nickel containing conductor layer upon the polysilicon layer; activating the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer; and forming through a second electroless plating method a copper containing conductor layer upon the nickel conductor layer.
Claim 9
Dependent Claim
20 words
The method of claim 6 wherein the copper containing integrated circuit structure is a copper containing integrated circuit inductor structure.
Claim 10
Dependent Claim
27 words
The method of claim 7 wherein the substrate layer is chosen from the group of substrate layers consisting of silicon substrate layers and silicon oxide substrate layers.
Claim 11
Dependent Claim
39 words
The method of claim 6 wherein: the nickel containing conductor layer is from about 1000 to about 2000 angstroms thick; and the nickel containing conductor layer has a phosphorus content of from about 3.2 to about 4.8 weight percent.
Claim 12
Dependent Claim
59 words
The method of claim 9 wherein the first electroless plating method employs an electroless nickel plating solution comprising: about 25 to about 35 grams per liter nickel sulfate; about 5 to about 10 grams per liter sodium hypophosphite; about 64 to about 80 grams per liter sodium citrate; and about 40 to about 50 grams per liter ammonium chloride.
Claim 13
Dependent Claim
55 words
The method of claim 6 wherein the nickel containing conductor layer is activated through contact with an aqueous activator solution comprising: about 0.1 to about 0.2 grams per liter palladium salt; about 450 to about 550 milliliters per liter glacial acetic acid; and about 200 to about 300 milliliters per liter 49 percent hydrofluoric acid.
Claim 14
Dependent Claim
16 words
The method of claim 6 wherein the second electroless plating method employs a nickel mediator ion.
Claim 15
Dependent Claim
59 words
The method of claim 12 wherein: the copper containing conductor layer has a thickness of from about 8000 to about 12000 angstroms; the copper containing conductor layer has a phosphorus content of from about 2 to about 3 weight percent; and the copper containing conductor layer has a nickel content of from about 2 to about 3 weight percent.
Claim 16
Dependent Claim
68 words
The method of claim 13 wherein the second electroless plating method employs an aqueous plating solution comprising: about 7 to about 10 grams per liter copper sulfate; about 15 to about 20 grams per liter sodium citrate; about 7.5 to about 11.5 grams per liter sodium hypophosphite; about 7.5 to about 12.5 grams per liter boric acid; and about 0.35 to about 0.75 grams per liter nickel sulfate.
Claim 17
Dependent Claim
20 words
The method of claim 6 wherein the polysilicon layer has a thickness of from about 1000 to about 3000 angstroms.
Claim 18
Dependent Claim
26 words
The method of claim 15 wherein: the polysilicon layer functions as an adhesion promoter layer; and the nickel containing conductor layer functions as a barrier layer.
Claim 19
Dependent Claim
20 words
The method of claim 6 further comprising forming upon the copper containing conductor layer a second nickel containing conductor layer.
Claim 20
Dependent Claim
75 words
The method of claim 1 wherein: the nickel containing conductor layer is formed over the substrate through a first electroless plating method; the nickel containing conductor layer is activated to form an activated nickel surface of the nickel containing conductor layer prior to forming the copper containing conductor layer upon the nickel containing conductor layer; and the copper containing conductor layer is formed upon the nickel containing conductor layer through a second electroless plating method.
References Cited (Backward Citations)
US4122215A
Cited
US4265943A
Cited
US4661375A
Cited
US5358907A
Cited
US5334346A
Cited
US5384284A
Cited
US5431959A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-31 | 2002-03-02 | 2002-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-31 | 2006-03-02 | 2006-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-31 | 2010-03-02 | 2010-09-01 | $7700.00 | Window Closed / Lapsed |