US5798296A
Expired / Lapsed
US
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Method of fabricating a gate having a barrier of titanium silicide
Assignee: Micron Technology Inc
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Filing: 1996-05-17
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Granted: 1998-08-25
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Expires: 2016-05-17
Abstract
Abstract A method of fabricating a gate having a barrier layer of titanium silicide is comprised of the steps of forming a layer of gate oxide. The gate oxide may be formed using a standard LOCOS process. A layer of doped polysilicon is deposited over the layer of gate oxide. A layer of titanium silicide is formed in a predetermined relationship with respect the layer of doped polysilicon, i.e., it may be deposited on top of the polysilicon or formed in a top surface of the polysilicon layer. A layer of tungsten silicide is deposited on top of the layer of titanium silicide. The layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide are etched to form the gate. A gate thus fabricated is also disclosed.
Inventors
- 👤 Pierre C. Fazan
- 👤 Hiang C. Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:54
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
85 words
A method of fabricating a gate having a barrier layer of titanium silicide, comprising the steps of: forming a layer of gate oxide; forming a layer of doped polysilicon over the layer of gate oxide; forming a layer of titanium silicide in a predetermined relationship with respect to the layer of doped polysilicon; forming a layer of tungsten silicide on top of the layer of titanium silicide; and etching the layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide to form a gate.
Claim 2
Independent Claim
85 words
A method of fabricating a gate having a barrier layer of titanium silicide, comprising the steps of: forming a layer of gate oxide; forming a layer of doped polysilicon over the layer of gate oxide; forming a layer of titanium silicide in a predetermined relationship with respect to the layer of doped polysilicon; forming a layer of tungsten silicide on top of the layer of titanium silicide; and etching the layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide to form a gate.
Claim 3
Dependent Claim
46 words
The method of claim 1 wherein said step of forming a layer of titanium silicide in a predetermined relationship with respect to the layer of doped polysilicon includes the step of forming a layer of titanium silicide on the top of the layer of doped polysilicon.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein said step of forming a layer of titanium silicide includes the step of sputtering a layer of titanium silicide.
Claim 5
Dependent Claim
29 words
The method of claim 2 wherein said step of forming a layer of titanium silicide includes the step of depositing a layer of titanium silicide by a CVD process.
Claim 6
Dependent Claim
47 words
The method of claim 1 wherein said step of forming a layer of titanium silicide in a predetermined relationship with respect to the layer of doped polysilicon includes the step of forming a layer of titanium silicide within a top surface of the layer of doped polysilicon.
Claim 7
Dependent Claim
47 words
The method of claim 5 wherein said step of forming a layer of titanium silicide within a top surface includes the steps of performing a shallow titanium implant, and wherein said method additionally comprises an anneal step after said step of depositing a layer of tungsten silicide.
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein said step of forming a layer of gate oxide includes the steps of performing a LOCOS process.
Claim 9
Dependent Claim
25 words
The method of claim 1 wherein said step of forming a gate oxide includes the steps of stripping and regrowing a layer of gate oxide.
Claim 10
Dependent Claim
25 words
The method of claim 1 wherein said step of forming a layer of doped polysilicon includes the step of depositing a layer of doped polysilicon.
Claim 11
Dependent Claim
32 words
The method of claim 1 wherein said step of forming a layer of doped polysilicon includes the steps of depositing a layer of polysilicon and doping the layer of polysilicon after deposition.
Claim 12
Independent Claim
81 words
A method of fabricating a gate having a barrier layer of titanium silicide, comprising the steps of: forming a layer of gate oxide; forming a layer of doped polysilicon over the layer of gate oxide; forming a layer of titanium silicide on top of the layer of doped polysilicon; depositing a layer of tungsten silicide on top of the layer of titanium silicide; and etching the layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide to form a gate.
Claim 13
Independent Claim
81 words
A method of fabricating a gate having a barrier layer of titanium silicide, comprising the steps of: forming a layer of gate oxide; forming a layer of doped polysilicon over the layer of gate oxide; forming a layer of titanium silicide on top of the layer of doped polysilicon; depositing a layer of tungsten silicide on top of the layer of titanium silicide; and etching the layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide to form a gate.
Claim 14
Dependent Claim
25 words
The method of claim 11 wherein said step of forming a layer of titanium silicide includes the step of sputtering a layer of titanium silicide.
Claim 15
Dependent Claim
29 words
The method of claim 11 wherein said step of forming a layer of titanium silicide includes the step of depositing a layer of titanium silicide by a CVD process.
Claim 16
Independent Claim
83 words
A method of fabricating a gate having a barrier layer of titanium silicide, comprising the steps of: forming a layer of gate oxide; forming a layer of doped polysilicon over the layer of gate oxide; forming a layer of titanium silicide in a top surface of the layer of doped polysilicon; depositing a layer of tungsten silicide on top of the layer of doped polysilicon; and etching the layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide to form a gate.
Claim 17
Independent Claim
83 words
A method of fabricating a gate having a barrier layer of titanium silicide, comprising the steps of: forming a layer of gate oxide; forming a layer of doped polysilicon over the layer of gate oxide; forming a layer of titanium silicide in a top surface of the layer of doped polysilicon; depositing a layer of tungsten silicide on top of the layer of doped polysilicon; and etching the layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide to form a gate.
Claim 18
Dependent Claim
47 words
The method of claim 14 wherein said step of forming a layer of titanium silicide within a top surface includes the steps of performing a shallow titanium implant, and wherein said method additionally comprises an anneal step after said step of depositing a layer of tungsten silicide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-24 | 2002-02-23 | 2002-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-24 | 2006-02-23 | 2006-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-24 | 2010-02-23 | 2010-08-25 | $7700.00 | Window Closed / Lapsed |