Patent US1703822A successfully refreshed from Google Patents.
Patent US5795429A successfully refreshed from Google Patents.
US5795429A
Expired / Lapsed
US
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Plasma processing apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1996-12-26
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Granted: 1998-08-18
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Expires: 2016-12-26
Abstract
Abstract Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.
Inventors
- 👤 Nobuo Ishii
- 👤 Jiro Hata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:34
CPC Classifications
H; H05; H05H; H05H1/00; H05H1/24; H05H1/46; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
141 words
A plasma processing apparatus, comprising: a processing chamber in which an object to be processed is arranged; a processing gas introducing means for introducing a processing gas into said processing chamber; and at least two induction members each arranged on the outer surface of said processing chamber positioned in correspondence with said object to be processed, an insulator being interposed between said induction members and said processing chamber, a high frequency power being supplied to said induction members so as to form an induction electric field near the object to be processed, each of said two induction members forming a single loop, and said two induction members being arranged in a concentric configuration, wherein said at least two induction members each being in the form of a single loop are independently controlled in respect of the high frequency power supplied thereto.
Claim 2
Dependent Claim
141 words
A plasma processing apparatus, comprising: a processing chamber in which an object to be processed is arranged; a processing gas introducing means for introducing a processing gas into said processing chamber; and at least two induction members each arranged on the outer surface of said processing chamber positioned in correspondence with said object to be processed, an insulator being interposed between said induction members and said processing chamber, a high frequency power being supplied to said induction members so as to form an induction electric field near the object to be processed, each of said two induction members forming a single loop, and said two induction members being arranged in a concentric configuration, wherein said at least two induction members each being in the form of a single loop are independently controlled in respect of the high frequency power supplied thereto.
Claim 3
Dependent Claim
46 words
The plasma processing apparatus according to claim 1, wherein said processing gas introducing means is formed in the upper wall of said processing chamber and comprises a gas introducing body formed of an insulator, a gas inlet port, and a large number of gas spurting ports.
Claim 4
Dependent Claim
29 words
The plasma processing apparatus according to claim 1, which further comprises a high frequency power applying means for applying a high frequency bias to an object to be processed.
Claim 5
Dependent Claim
27 words
The plasma processing apparatus according to claim 1, wherein said at least two induction members each forming a single loop are concentrically arranged on the same plane.
Claim 6
Dependent Claim
167 words
A plasma processing apparatus, comprising: a processing chamber in which an object to be processed is arranged; a processing gas introducing means for introducing a processing gas into said processing chamber; at least two induction members each arranged on an outer surface of said processing chamber and positioned in correspondence with said object to be processed, each of said at least two induction members forming a single loop and said at least two induction members being arranged in a concentric configuration; an insulator interposed between said induction members and said processing chamber; and means for supplying a first high frequency power to one of the induction members, located outside in said concentric configuration, and a second high frequency power to another of the induction members, located inside in said concentric configuration, said first high frequency power being larger than said second high frequency power, wherein said at least two induction members being independently controlled in respect to the first and second high frequency power respectively supplied thereto.
Claim 7
Dependent Claim
167 words
A plasma processing apparatus, comprising: a processing chamber in which an object to be processed is arranged; a processing gas introducing means for introducing a processing gas into said processing chamber; at least two induction members each arranged on an outer surface of said processing chamber and positioned in correspondence with said object to be processed, each of said at least two induction members forming a single loop and said at least two induction members being arranged in a concentric configuration; an insulator interposed between said induction members and said processing chamber; and means for supplying a first high frequency power to one of the induction members, located outside in said concentric configuration, and a second high frequency power to another of the induction members, located inside in said concentric configuration, said first high frequency power being larger than said second high frequency power, wherein said at least two induction members being independently controlled in respect to the first and second high frequency power respectively supplied thereto.
References Cited (Backward Citations)
US4948458A
Cited
US5241245A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-17 | 2002-02-16 | 2002-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-17 | 2006-02-16 | 2006-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-17 | 2010-02-16 | 2010-08-18 | $7700.00 | Window Closed / Lapsed |