US5789761A
Expired / Lapsed
US
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Thin-film transistor array having light shading film and antireflection layer
Assignee: Vista Peak Ventures LLC
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Filing: 1996-05-14
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Granted: 1998-08-04
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Expires: 2016-05-14
Abstract
Abstract A thin-film transistor (TFT) array for preventing the light reflected inside a liquid crystal panel from entering a channel layer, while suppressing an increase of stray capacitance. A light shading film and an antireflection film atop source and drain electrodes are made of semiconductor layers and are spaced from each other on a TFT. The reduction in reflected light prevents an increase in an off current and therefore improves the quality of a liquid crystal display.
Inventors
- 👤 Hirofumi Ihara
- 👤 Kohji Nakashima
- 👤 Susumu Ohi
- 👤 Shin Koide
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136209; G02F1/1333; G02F1/1335; G02F1/133502; G02F1/133509; G02F1/133512; G02F1/1368; G02F2202/00; G02F2202/10; G02F2202/103
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
101 words
A thin-film transistor array comprising: a plurality of scanning signal lines and a plurality of data signal lines disposed on a transparent substrate; a thin-film transistor disposed at each point of intersection of said scanning signal lines and said data signal lines; a light shading film of semiconductor on an insulating film on an active layer of said thin-film transistor; and antireflection films of of semiconductor on an insulating film on source and drain electrodes of said thin-film transistor, the combination of said light shading film and said antireflection films suppressing increases in off current and stray capacitance in the array.
Claim 2
Dependent Claim
101 words
A thin-film transistor array comprising: a plurality of scanning signal lines and a plurality of data signal lines disposed on a transparent substrate; a thin-film transistor disposed at each point of intersection of said scanning signal lines and said data signal lines; a light shading film of semiconductor on an insulating film on an active layer of said thin-film transistor; and antireflection films of of semiconductor on an insulating film on source and drain electrodes of said thin-film transistor, the combination of said light shading film and said antireflection films suppressing increases in off current and stray capacitance in the array.
Claim 3
Dependent Claim
24 words
A thin-film transistor array as defined in claim 1, wherein said light shading film and said antireflection film are spaced apart from each other.
Claim 4
Dependent Claim
30 words
A thin-film transistor array as defined in claim 1, wherein said light shading film and said antireflection film are formed by using the same patterning process for the same layer.
Claim 5
Dependent Claim
15 words
A thin-film transistor array as defined in claim 1, wherein said semiconductor is amorphous silicon.
Claim 6
Dependent Claim
31 words
A thin-film transistor array as defined in claim 1, wherein a second light shading film and a second antireflection film, respectively, are on said light shading film and said antireflection film.
Claim 7
Dependent Claim
30 words
A thin-film transistor array as defined in claim 5, wherein said second light shading film and said second antireflection film, respectively, are semiconductor layers containing an impurity of high density.
Claim 8
Dependent Claim
95 words
A thin-film transistor array comprising: a plurality of scanning signal lines and a plurality of data signal lines disposed on a transparent substrate; a thin-film transistor disposed at each point of intersection of said scanning signal lines and said data signal lines; a first light shading film on an insulating film on an active layer of said thin-film transistor; first antireflection films on an insulating film on source and drain electrodes of said thin-film transistor; a second light shading film on said first light shading film; and second antireflection films on said first antireflection films.
Claim 9
Dependent Claim
95 words
A thin-film transistor array comprising: a plurality of scanning signal lines and a plurality of data signal lines disposed on a transparent substrate; a thin-film transistor disposed at each point of intersection of said scanning signal lines and said data signal lines; a first light shading film on an insulating film on an active layer of said thin-film transistor; first antireflection films on an insulating film on source and drain electrodes of said thin-film transistor; a second light shading film on said first light shading film; and second antireflection films on said first antireflection films.
Claim 10
Dependent Claim
30 words
A thin-film transistor array as defined in claim 7, wherein said second light shading film and said second antireflection film, respectively, are semiconductor layers containing an impurity of high density.
Claim 11
Dependent Claim
81 words
A thin-film transistor array comprising: a plurality of scanning signal lines and a plurality of data signal lines disposed on a transparent substrate; a thin-film transistor disposed at each point of intersection of said scanning signal lines and said data signal lines; a light shading film of amorphous silicon on an insulating film on an active layer of said thin-film transistor; and antireflection films of amorphous silicon on an insulating film on the source and drain electrodes of said thin-film transistor.
Claim 12
Dependent Claim
81 words
A thin-film transistor array comprising: a plurality of scanning signal lines and a plurality of data signal lines disposed on a transparent substrate; a thin-film transistor disposed at each point of intersection of said scanning signal lines and said data signal lines; a light shading film of amorphous silicon on an insulating film on an active layer of said thin-film transistor; and antireflection films of amorphous silicon on an insulating film on the source and drain electrodes of said thin-film transistor.
Claim 13
Dependent Claim
67 words
A thin-film transistor having an active region between source and drain electrodes, the transistor comprising: a light shading film on an insulating film on the active layer of the thin-film transistor; and antireflection films on an insulating film on the source and drain electrodes of the thin-film transistor, the combination of said light shading film and said antireflection films suppressing increases in off current in the transistor.
Claim 14
Dependent Claim
67 words
A thin-film transistor having an active region between source and drain electrodes, the transistor comprising: a light shading film on an insulating film on the active layer of the thin-film transistor; and antireflection films on an insulating film on the source and drain electrodes of the thin-film transistor, the combination of said light shading film and said antireflection films suppressing increases in off current in the transistor.
Claim 15
Dependent Claim
21 words
A thin-film transistor as defined in claim 10, wherein said light shading film and said antireflection film are, respectively, semiconductor layers.
Claim 16
Dependent Claim
18 words
A thin-film transistor as defined in claim 11, wherein said semiconductor layers comprise an impurity of high density.
Claim 17
Dependent Claim
15 words
A thin-film transistor as defined in claim 11, wherein said semiconductor layers are amorphous silicon.
Claim 18
Dependent Claim
23 words
A thin-film transistor as defined in claim 10, wherein said light shading film and said antireflection film are spaced apart from each other.
Claim 19
Dependent Claim
21 words
A thin-film transistor as defined in claim 10, wherein said light shading film and said antireflection film are the same material.
Claim 20
Dependent Claim
58 words
A thin-film transistor as defined in claim 10, comprising a first of said antireflection films on the insulating film on the source electrode and a second of said antireflection films on the insulating film on the drain electrode, and wherein said first and second antireflection films and said light shading film are all spaced apart from each other.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-03 | 2006-02-02 | 2006-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-03 | 2010-02-02 | 2010-08-04 | $7700.00 | Window Closed / Lapsed |