US5789294A
Expired / Lapsed
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Manufacturing method of nonvolatile memory
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-03-13
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Granted: 1998-08-04
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Expires: 2016-03-13
Abstract
Abstract A manufacturing method of a nonvolatile memory includes the steps of forming a field oxide film on a Cell Region (CR) and a Peripheral circuit Area (PA) of a semiconductor substrate, and then defining an active region, sequentially forming a tunneling oxide film, a lower gate, and a gate insulating film, eliminating the gate insulating film, the lower gate, and tunneling oxide film on the PA, and then forming a gate oxide film on the substrate, forming an upper gate and an upper insulating film on the whole surface of the semiconductor substrate, etching the upper insulating film and the upper gate simultaneously (in the first embodiment) or separately (in the second embodiment), and then forming a single layer gate pattern and a stack gate pattern on the PA and on the CR, respectively, etching the gate insulating film and the lower gate on the CR by using a stack gate pattern, forming an interlayer dielectric film on the semiconductor substrate, and then forming a metallic wiring. Thus, a function of detecting an end point can be prevented from lowering, a process can also be simplified, and further a loss of the field oxide film can be minimized, so that it is possible to prevent the device isolation characteristics from being reduced and damage of the substrate can be prevented.
Inventors
- 👤 Jeong-Hyuk Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:04
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B69/00; H10B41/42; H10B41/43; H10B41/44; H10B41/48
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
230 words
A manufacturing method of a nonvolatile memory comprising the steps of: forming a field oxide film on a cell region (CR) and a periphery circuit area (PA) of a semiconductor substrate to define an active region; forming a tunneling oxide film on said active region to form a first resultant structure; forming a lower gate on said first resultant structure; eliminating a defined part of said lower gate on said CR to form a second resultant structure; forming a gate insulating film on the whole surface of said second resultant structure; eliminating said gate insulating film, said lower gate, and said tunneling oxide film on said PA; forming a gate oxide film on said PA to form a third resultant structure; forming an upper gate and an upper insulating film on a whole surface of said third resultant structure; etching said upper insulating film and said upper gate on said CR and PA to form a gate mask and a single layer gate pattern; etching said gate insulating film and said lower gate on said CR by using said gate mask to form a stack gate pattern of a fourth resultant structure; forming source/drain regions on said fourth resultant structure to form a fifth resultant structure; forming an interlayer dielectric film on a whole surface of said fifth resultant structure; and forming a metallic wiring on said interlayer dielectric film.
Claim 2
Dependent Claim
230 words
A manufacturing method of a nonvolatile memory comprising the steps of: forming a field oxide film on a cell region (CR) and a periphery circuit area (PA) of a semiconductor substrate to define an active region; forming a tunneling oxide film on said active region to form a first resultant structure; forming a lower gate on said first resultant structure; eliminating a defined part of said lower gate on said CR to form a second resultant structure; forming a gate insulating film on the whole surface of said second resultant structure; eliminating said gate insulating film, said lower gate, and said tunneling oxide film on said PA; forming a gate oxide film on said PA to form a third resultant structure; forming an upper gate and an upper insulating film on a whole surface of said third resultant structure; etching said upper insulating film and said upper gate on said CR and PA to form a gate mask and a single layer gate pattern; etching said gate insulating film and said lower gate on said CR by using said gate mask to form a stack gate pattern of a fourth resultant structure; forming source/drain regions on said fourth resultant structure to form a fifth resultant structure; forming an interlayer dielectric film on a whole surface of said fifth resultant structure; and forming a metallic wiring on said interlayer dielectric film.
Claim 3
Dependent Claim
38 words
The manufacturing method of a nonvolatile memory according to claim 1, wherein said lower gate is a floating gate formed of a doped polysilicon film and said upper gate is a control gate formed of a polycide film.
Claim 4
Dependent Claim
27 words
The manufacturing method of a nonvolatile memory according to claim 1, wherein said interlayer dielectric film is formed of a high temperature oxide or a BPSG film.
Claim 5
Dependent Claim
253 words
A manufacturing method of a nonvolatile memory comprising the steps of: forming a field oxide film on a cell region (CR) and a periphery circuit area (PA) of a semiconductor substrate to define an active region; forming a tunneling oxide film on said active region to form a first resultant structure; forming a lower gate on said first resultant structure; eliminating a defined part of said lower gate on said CR to form a second resultant structure; forming a gate insulating film on the whole surface of said second resultant structure; eliminating said gate insulating film, said lower gate, and said tunneling oxide film on said PA; forming a gate oxide film on said PA to form a third resultant structure; forming an upper gate and an upper insulating film on the whole surface of said third resultant structure; patterning said upper insulating film on said CR and PA to form a mask; etching said upper gate by using said patterned upper insulating film as a mask to form a gate mask pattern on said CR and a single layer gate pattern on said PA; etching said gate insulating film and said lower gate on said CR by using said gate mask pattern to form a stack gate pattern to form a fourth resultant structure; forming source/drain regions on said fourth resultant structure to form a fifth resultant structure; forming an interlayer dielectric film on a whole surface of said fifth resultant structure; and forming a metallic wiring on said interlayer dielectric film.
Claim 6
Dependent Claim
253 words
A manufacturing method of a nonvolatile memory comprising the steps of: forming a field oxide film on a cell region (CR) and a periphery circuit area (PA) of a semiconductor substrate to define an active region; forming a tunneling oxide film on said active region to form a first resultant structure; forming a lower gate on said first resultant structure; eliminating a defined part of said lower gate on said CR to form a second resultant structure; forming a gate insulating film on the whole surface of said second resultant structure; eliminating said gate insulating film, said lower gate, and said tunneling oxide film on said PA; forming a gate oxide film on said PA to form a third resultant structure; forming an upper gate and an upper insulating film on the whole surface of said third resultant structure; patterning said upper insulating film on said CR and PA to form a mask; etching said upper gate by using said patterned upper insulating film as a mask to form a gate mask pattern on said CR and a single layer gate pattern on said PA; etching said gate insulating film and said lower gate on said CR by using said gate mask pattern to form a stack gate pattern to form a fourth resultant structure; forming source/drain regions on said fourth resultant structure to form a fifth resultant structure; forming an interlayer dielectric film on a whole surface of said fifth resultant structure; and forming a metallic wiring on said interlayer dielectric film.
Claim 7
Dependent Claim
27 words
The manufacturing method of a nonvolatile memory according to claim 4, wherein said interlayer dielectric film is formed of a high temperature oxide or a BPSG film.
Claim 8
Dependent Claim
38 words
The manufacturing method of a nonvolatile memory according to claim 4, wherein said lower gate is a floating gate formed of a doped polysilicon film and said upper gate is a control gate formed of a polycide film.
Claim 9
Dependent Claim
28 words
The manufacturing method of a nonvolatile memory according to claim 1, wherein said upper insulating film layer is not removed after forming said lower gate on said CR.
Claim 10
Dependent Claim
28 words
The manufacturing method of a nonvolatile memory according to claim 4, wherein said upper insulating film layer is not removed after forming said lower gate on said CR.
References Cited (Backward Citations)
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