Production of semiconductor package having semiconductor chip mounted with its face down on substrate with protruded electrodes therebetween and semiconductor package

Claim 1

A method for producing a semiconductor package having a semiconductor chip, which has an electrode pad formed on its first surface and is mounted face down on a substrate which has formed on its first surface a wiring circuit containing a conductive terminal and on its second surface a flat external connecting terminal, which is electrically connected to said wiring circuit, the method comprising the steps of: (a) forming a first protruded electrode, which is solid and has a top surface, on the conductive terminal of said substrate by wire bonding and forming a second protruded electrode on the electrode pad of said semiconductor chip by selective plating, (b) flattening said first protruded electrode, (c) providing said substrate and said semiconductor chip so as to oppose said first protruded electrode to said second protruded electrode, (d) pressing said substrate and said semiconductor chip to make a solid phase diffusion bonding of said first protruded electrode and said second protruded electrode, (e) charging a sealing resin into a space between said substrate and said semiconductor chip opposed to each other with a second surface of said semiconductor chip exposed, and (f) curing said charged resin, wherein said substrate and said semiconductor chip are pressed while being heated in step (d), and a temperature for heating said substrate and said semiconductor chip is in a range of about 200° to 400° C. and a press load is in a range of 100 to 300 gf per bump.

Claim 2

A method for producing a semiconductor package having a semiconductor chip, which has an electrode pad formed on its first surface and is mounted face down on a substrate which has formed on its first surface a wiring circuit containing a conductive terminal and on its second surface a flat external connecting terminal, which is electrically connected to said wiring circuit, the method comprising the steps of: (a) forming a first protruded electrode, which is solid and has a top surface, on the conductive terminal of said substrate by wire bonding and forming a second protruded electrode on the electrode pad of said semiconductor chip by selective plating, (b) flattening said first protruded electrode, (c) providing said substrate and said semiconductor chip so as to oppose said first protruded electrode to said second protruded electrode, (d) pressing said substrate and said semiconductor chip to make a solid phase diffusion bonding of said first protruded electrode and said second protruded electrode, (e) charging a sealing resin into a space between said substrate and said semiconductor chip opposed to each other with a second surface of said semiconductor chip exposed, and (f) curing said charged resin, wherein said substrate and said semiconductor chip are pressed while being heated in step (d), and a temperature for heating said substrate and said semiconductor chip is in a range of about 200° to 400° C. and a press load is in a range of 100 to 300 gf per bump.