TFT structure including a photo-imageable insulating layer for use with LCDs and image sensors

Claim 1

A thin film transistor or (TFT) structure comprising: a first substrate; an array of conductive electrodes for permitting image data to be forwarded to a viewer; a plurality of gate lines and TFT gate electrodes formed on said first substrate; a semiconductor layer formed on said first substrate and disposed over said gate lines and said gate electrodes, said semiconductor layer being patterned so as to remain in an array of TFT areas; a source electrode and a drain electrode formed on said first substrate over said semiconductor layer in each of said TFT areas, a TFT channel being defined between the corresponding source and drain electrodes in each TFT area thereby forming an array of TFTs on said first substrate; a plurality of drain lines connected to corresponding ones of said drain electrodes; wherein a plurality of said conductive electrodes overlap at least one of a gate and a drain line thereby increasing the aperture ratio of the structure; a substantially transparent photo-imageable insulating layer which is a resist, said photo-imageable resist insulating layer being disposed on said first substrate between (i) said conductive electrodes, and (ii) at least one of said drain and gate lines so as to insulate said electrodes from said lines; and wherein said substantially transparent resist insulating layer has a dielectric constant of less than about 5.0.