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US5777931A
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Synchronized redundancy decoding systems and methods for integrated circuit memory devices
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-08-26
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Granted: 1998-07-07
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Expires: 2016-08-26
Abstract
Abstract Redundancy decoding systems and methods for integrated circuit memory devices synchronize a redundancy decoding signal to allow the redundancy decoding signal to be output during an enabling period and to prevent output of the redundancy decoding signal otherwise. In particular, a redundancy decoder is synchronized to an output buffer so that the redundancy decoder generates a redundancy decoding signal during a time period which is independent of the identity of the programmed address. Accordingly, high speed selection of a redundancy word line is provided in synchronism with the conventional word line selection, so that address skew and improper operation of the redundancy system relative to the normal word line selection system is prevented.
Inventors
- 👤 Ig-Soo Kwon
- 👤 Chul-Min Jung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:18
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C29/00; G11C29/70; G11C29/78; G11C29/84; G11C29/842
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
84 words
A redundancy decoding system for an integrated circuit memory device, comprising: a plurality of programmable devices which collectively store a programmed address corresponding to a defective memory cell address, wherein the plurality of programmable devices are responsive to an input address to produce a redundancy decoding signal when the programmed address matches the input address; and a redundancy decoding signal synchronizer, which allows the redundancy decoding signal to be output during an enabling period, and which prevents output of the redundancy decoding signal otherwise.
Claim 2
Dependent Claim
84 words
A redundancy decoding system for an integrated circuit memory device, comprising: a plurality of programmable devices which collectively store a programmed address corresponding to a defective memory cell address, wherein the plurality of programmable devices are responsive to an input address to produce a redundancy decoding signal when the programmed address matches the input address; and a redundancy decoding signal synchronizer, which allows the redundancy decoding signal to be output during an enabling period, and which prevents output of the redundancy decoding signal otherwise.
Claim 3
Dependent Claim
73 words
A redundancy decoding system according to claim 1 further comprising: an address buffer which produces the input address in synchronization with a first signal; the redundancy decoding signal synchronizer being responsive to a second signal to allow the redundancy decoding signal to be output during the enabling period, and to prevent output of the redundancy decoding signal otherwise; and wherein the second signal is the first signal, delayed by a first delay time.
Claim 4
Dependent Claim
68 words
A redundancy decoding system according to claim 1 wherein the plurality of programmable devices are connected in parallel to define a common node, and wherein the redundancy decoding signal synchronizer is also connected to the common node to allow the redundancy decoding signal to be output at the common node during the enabling period, and to prevent output of the redundancy decoding signal at the common node otherwise.
Claim 5
Dependent Claim
68 words
A redundancy decoding system according to claim 3 wherein the redundancy decoding signal synchronizer comprises a transistor having a controlling electrode and a pair of controlled electrodes, wherein the pair of controlled electrodes is connected between the common node and a reference voltage, and wherein the controlling electrode is connected to a synchronizing signal which deactivates the transistor during the enabling period and which activates the transistor otherwise.
Claim 6
Dependent Claim
62 words
A redundancy decoding system for an integrated circuit memory device, comprising: a redundancy address buffer which receives an input address; and a synchronized redundancy decoder, responsive to the input address, which generates a redundancy decoding signal when the input address matches a programmed address which is stored therein, during a time period which is independent of the identity of the programmed address.
Claim 7
Dependent Claim
62 words
A redundancy decoding system for an integrated circuit memory device, comprising: a redundancy address buffer which receives an input address; and a synchronized redundancy decoder, responsive to the input address, which generates a redundancy decoding signal when the input address matches a programmed address which is stored therein, during a time period which is independent of the identity of the programmed address.
Claim 8
Dependent Claim
110 words
A redundancy decoding system according to claim 5 wherein the synchronized redundancy decoder comprises: a plurality of programmable devices which collectively store the programmed address corresponding to a defective memory cell address, wherein the plurality of programmable devices are responsive to the input address to produce the redundancy decoding signal when the programmed address matches the input address at a time which is dependent upon the identity of the programmed address; and a redundancy decoding signal synchronizer, which allows the redundancy decoding signal to be output during the time period which is independent of the identity of the programmed address, and which prevents output of the redundancy decoding signal otherwise.
Claim 9
Dependent Claim
82 words
A redundancy decoding system according to claim 6: wherein the address buffer produces the input address in synchronization with a first signal; wherein the redundancy decoding signal synchronizer is responsive to a second signal to allow the redundancy decoding signal to be output during the time period which is independent of the identity of the programmed address, and to prevent output of the redundancy decoding signal otherwise; and wherein the second signal is the first signal, delayed by a first delay time.
Claim 10
Dependent Claim
118 words
A decoding system for an integrated circuit memory device, comprising: a decoder, responsive to an input address, which generates a decoding signal; a main word line decoder, responsive to the decoder, which produces a word line selection signal in response to the decoding signal; a redundancy decoder, responsive to the input address, which generates a redundancy decoding signal when the input address matches a programmed address which is stored therein; and a redundant word line decoder, responsive to the redundancy decoder, which produces a redundancy word line selection signal in response to the redundancy decoding signal; the word line selection signal and the redundant word line selection signal being produced synchronously, notwithstanding the identity of the input address.
Claim 11
Dependent Claim
118 words
A decoding system for an integrated circuit memory device, comprising: a decoder, responsive to an input address, which generates a decoding signal; a main word line decoder, responsive to the decoder, which produces a word line selection signal in response to the decoding signal; a redundancy decoder, responsive to the input address, which generates a redundancy decoding signal when the input address matches a programmed address which is stored therein; and a redundant word line decoder, responsive to the redundancy decoder, which produces a redundancy word line selection signal in response to the redundancy decoding signal; the word line selection signal and the redundant word line selection signal being produced synchronously, notwithstanding the identity of the input address.
Claim 12
Dependent Claim
85 words
A decoding system according to claim 8 wherein the redundancy decoder comprises: a plurality of programmable devices which collectively store the programmed address corresponding to a defective memory cell address, wherein the plurality of programmable devices are responsive to the input address to produce a redundancy decoding signal when the programmed address matches the input address; and a redundancy decoding signal synchronizer, which allows the redundancy decoding signal to be output during an enabling period, and which prevents output of the redundancy decoding signal otherwise.
Claim 13
Dependent Claim
72 words
A decoding system according to claim 9 further comprising: an address buffer which produces the input address in synchronization with a first signal; the redundancy decoding signal synchronizer being responsive to a second signal to allow the redundancy decoding signal to be output during the enabling period, and to prevent output of the redundancy decoding signal otherwise; and wherein the second signal is the first signal, delayed by a first delay time.
Claim 14
Dependent Claim
90 words
A redundancy decoding method for an integrated circuit memory device, including a plurality of programmable devices which collectively store a programmed address corresponding to a defective memory cell address, the redundancy decoding method comprising the steps of: applying an input address to the plurality of programmable devices to produce a redundancy decoding signal when the programmed address matches the input address; and synchronizing the redundancy decoding signal, to allow the redundancy decoding signal to be output during an enabling period, and to prevent output of the redundancy decoding signal otherwise.
Claim 15
Dependent Claim
90 words
A redundancy decoding method for an integrated circuit memory device, including a plurality of programmable devices which collectively store a programmed address corresponding to a defective memory cell address, the redundancy decoding method comprising the steps of: applying an input address to the plurality of programmable devices to produce a redundancy decoding signal when the programmed address matches the input address; and synchronizing the redundancy decoding signal, to allow the redundancy decoding signal to be output during an enabling period, and to prevent output of the redundancy decoding signal otherwise.
Claim 16
Dependent Claim
87 words
A redundancy decoding method according to claim 11 wherein the integrated circuit memory device further comprises an address buffer which produces the input address in synchronization with a first signal, and wherein the synchronizing step comprises the steps of: delaying the first signal by a first delay time to produce a second signal; and synchronizing the redundancy decoding signal to the second signal, to allow the redundancy decoding signal to be output synchronous with the second signal, and to prevent output of the redundancy decoding signal otherwise.
Claim 17
Dependent Claim
93 words
A redundancy decoding method for an integrated circuit memory device, the integrated circuit memory device including a redundancy address buffer which receives an input address, and a redundancy decoder, responsive to the input address, which generates a redundancy decoding signal when the input address matches a programmed address which is stored therein, the redundancy decoding method comprising the step of: synchronizing the redundancy decoder to the redundancy address buffer such that the redundancy decoder generates the redundancy decoding signal during a time period which is independent of the identity of the programmed address.
Claim 18
Dependent Claim
93 words
A redundancy decoding method for an integrated circuit memory device, the integrated circuit memory device including a redundancy address buffer which receives an input address, and a redundancy decoder, responsive to the input address, which generates a redundancy decoding signal when the input address matches a programmed address which is stored therein, the redundancy decoding method comprising the step of: synchronizing the redundancy decoder to the redundancy address buffer such that the redundancy decoder generates the redundancy decoding signal during a time period which is independent of the identity of the programmed address.
Claim 19
Dependent Claim
97 words
A redundancy decoding method according to claim 13 wherein the redundancy decoder comprises a plurality of programmable devices which collectively store the programmed address corresponding to a defective memory cell address, wherein the plurality of programmable devices are responsive to the input address to produce the redundancy decoding signal when the programmed address matches the input address; and wherein the synchronizing step comprises the step of: allowing the redundancy decoding signal to be output during the time period which is independent of the identity of the programmed address, and preventing output of the redundancy decoding signal otherwise.
Claim 20
Dependent Claim
88 words
A redundancy decoding method according to claim 14 wherein the address buffer produces the input address in synchronization with a first signal, the redundancy decoding method further comprising the steps of: delaying the first signal by a first delay time to produce the second signal; and synchronizing the redundancy decoding signal to the second signal to allow the redundancy decoding signal to be output during the time period which is independent of the identity of the programmed address, and to prevent output of the redundancy decoding signal otherwise.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |