Patent US5777374A successfully refreshed from Google Patents.
US5777374A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit interconnect structure with back reflection suppressing electronic "speed bumps"
Assignee: LSI Corp
•
Filing: 1995-12-26
•
Granted: 1998-07-07
•
Expires: 2015-12-26
Abstract
Abstract A polysilicon interconnect is formed on a microelectronic circuit substrate for conducting signals from a driver to a non-polycrystalline silicon contact which has higher impedance than the interconnect. A plurality of electronic "speed bumps" are spaced along the interconnect for disturbing or disrupting signals propagating along the interconnect toward the contact and thereby reducing undesirable back reflection and ringing. The speed bumps can include capacitance altering elements in the form of dielectric strips, or resistance altering elements in the form of low resistance doped areas or high resistance amorphous areas. The speed bumps can include first and second elements having different values of capacitance or resistance which are spaced along the interconnect in alternating relation.
Inventors
- 👤 Michael D. Rostoker
- 👤 Nicholas F. Pasch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
81 words
A microelectronic structure, comprising: a semiconductor substrate having formed thereon at least one driver and at least one non-polycrystalline silicon contact, said contact having a first impedance; an interconnect formed on the substrate for electrically coupling said driver to said contact, said interconnect having a second impedance substantially less than said first impedance; and a plurality of signal altering elements spaced along the interconnect for substantially reducing back reflection and signal ringing at the interface of said interconnect and said contact.
Claim 2
Dependent Claim
81 words
A microelectronic structure, comprising: a semiconductor substrate having formed thereon at least one driver and at least one non-polycrystalline silicon contact, said contact having a first impedance; an interconnect formed on the substrate for electrically coupling said driver to said contact, said interconnect having a second impedance substantially less than said first impedance; and a plurality of signal altering elements spaced along the interconnect for substantially reducing back reflection and signal ringing at the interface of said interconnect and said contact.
Claim 3
Dependent Claim
77 words
A microelectronic structure including a semiconductor substrate having formed thereon at least one driver and one contact, comprising: an interconnect formed on the substrate for electrically coupling said driver to said contact; and a first signal altering element disposed on said interconnect for reducing back reflection and ringing in signals propagating along the interconnect; and a second signal altering element disposed on said interconnect for further reducing back reflection and ringing in signals propagating along the interconnect.
Claim 4
Dependent Claim
77 words
A microelectronic structure including a semiconductor substrate having formed thereon at least one driver and one contact, comprising: an interconnect formed on the substrate for electrically coupling said driver to said contact; and a first signal altering element disposed on said interconnect for reducing back reflection and ringing in signals propagating along the interconnect; and a second signal altering element disposed on said interconnect for further reducing back reflection and ringing in signals propagating along the interconnect.
Claim 5
Dependent Claim
19 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements have different capacitance values.
Claim 6
Dependent Claim
19 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements have different resistance values.
Claim 7
Dependent Claim
22 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements alter the capacitive loading of the interconnect.
Claim 8
Dependent Claim
18 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements are dielectric strips.
Claim 9
Dependent Claim
15 words
A microelectronic structure according to claim 6, wherein the dielectric strips have different dielectric constants.
Claim 10
Dependent Claim
21 words
A microelectronic structure according to claim 2, wherein said contact has a first impedance and said interconnect has a second impedance.
Claim 11
Dependent Claim
18 words
A microelectronic structure according to claim 8, wherein said first impedance is substantially greater then said second impedance.
Claim 12
Dependent Claim
14 words
A microelectronic structure according to claim 2, wherein said interconnect is a polysilicon interconnect.
Claim 13
Dependent Claim
15 words
A microelectronic structure according to claim 2, wherein said contact is a non-polycrystalline silicon contact.
Claim 14
Dependent Claim
20 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements are both resistance altering elements.
Claim 15
Dependent Claim
21 words
A microelectronic structure according to claim 12, wherein said resistance altering elements are low resistance doped areas formed on said interconnect.
Claim 16
Dependent Claim
27 words
A microelectronic structure according to claim 12, further including a plurality of said first and second signal resistance altering elements spaced along the interconnect in altering relation.
Claim 17
Dependent Claim
21 words
A microelectronic structure according to claim 12, wherein said resistance altering elements are high resistance amorphous areas formed on said interconnect.
Claim 18
Dependent Claim
22 words
A microelectronic structure according to claim 7, wherein the dielectric strips are formed on the interconnect in close proximity to said contact.
Claim 19
Dependent Claim
18 words
A microelectronic structure according to claim 13, wherein the low resistance doped areas are formed of amorphous silicon.
Claim 20
Dependent Claim
18 words
A microelectronic structure according to claim 13, wherein the low resistance doped areas are formed by impurity doping.
Claim 21
Dependent Claim
20 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements are spaced from one another.
Claim 22
Dependent Claim
19 words
A microelectronic structure according to claim 2, wherein said first and second signal altering elements abut against each other.
Claim 23
Dependent Claim
78 words
A microelectronic device, comprising: a semiconductor substrate; a driver formed on said substrate; a contact formed on said substrate; an interconnect formed on said substrate for coupling together electrically said driver and said contact; a first signal altering element disposed on said interconnect for reducing back reflection and ringing in signals propagating along the interconnect; and a second signal altering element disposed on said interconnect for further reducing back reflection and ringing in signals propagating along the interconnect.
Claim 24
Dependent Claim
78 words
A microelectronic device, comprising: a semiconductor substrate; a driver formed on said substrate; a contact formed on said substrate; an interconnect formed on said substrate for coupling together electrically said driver and said contact; a first signal altering element disposed on said interconnect for reducing back reflection and ringing in signals propagating along the interconnect; and a second signal altering element disposed on said interconnect for further reducing back reflection and ringing in signals propagating along the interconnect.
References Cited (Backward Citations)
US5442225A
Cited
US5567988A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |