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US5773156A
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Magnetoresistance effect element
Assignee: Toshiba Corp
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Filing: 1996-01-25
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Granted: 1998-06-30
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Expires: 2016-01-25
Abstract
Abstract A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.
Inventors
- 👤 Koichiro Inomata
- 👤 Keiichiro Yusu
- 👤 Roger Highmore
- 👤 Shiho Okuno
- 👤 Yoshiaki Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:08
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/80; H10N50/85; H01; H01F; H01F1/00; H01F1/0036; H01F1/0045; H01F1/0063; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12014; Y10T428/12465; Y10T428/12493; Y10T428/12528; Y10T428/12674
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
52 words
A magnetoresistance effect element comprising a magnetic body in which magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy gap of not more than about 1 eV.
Claim 2
Dependent Claim
52 words
A magnetoresistance effect element comprising a magnetic body in which magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy gap of not more than about 1 eV.
Claim 3
Dependent Claim
29 words
The magnetoresistance effect element according to claim 1, wherein the magnetic metal particles contain at least two magnetic elements selected from the group consisting of Fe, Co, and Ni.
Claim 4
Dependent Claim
31 words
The magnetoresistance effect element according to claim 1, wherein substantially all of the magnetic metal particles has a particle diameter falling within the range of about 5 to about 100 nm.
Claim 5
Dependent Claim
19 words
The magnetoresistance effect element according to claim 1, wherein the magnetic metal particles substantially have a magnetostriction of zero.
Claim 6
Dependent Claim
24 words
The magnetoresistance effect element according to claim 1, wherein the semiconductor matrix has an effective energy gap of not more than about 0.1 eV.
Claim 7
Dependent Claim
24 words
The magnetoresistance effect element of claim 1, wherein said semiconductor matrix is an alloy or compound containing said transition metal, and Si or Ge.
Claim 8
Dependent Claim
64 words
A magnetoresistance effect element comprising a multilayered film having at least one magnetic layer in which magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy, gap of not more than about 1 eV, and at least one non-magnetic layer.
Claim 9
Dependent Claim
64 words
A magnetoresistance effect element comprising a multilayered film having at least one magnetic layer in which magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy, gap of not more than about 1 eV, and at least one non-magnetic layer.
Claim 10
Dependent Claim
29 words
The magnetoresistance effect element according to claim 7, wherein the magnetic metal particles contain at least two magnetic elements selected from the group consisting of Fe, Co, and Ni.
Claim 11
Dependent Claim
31 words
The magnetoresistance effect element according to claim 7, wherein substantially all of the magnetic metal particles has a particle diameter falling within the range of about 5 to about 100 nm.
Claim 12
Dependent Claim
19 words
The magnetoresistance effect element according to claim 7, wherein the magnetic metal particles substantially have a magnetostriction of zero.
Claim 13
Dependent Claim
24 words
The magnetoresistance effect element according to claim 7, wherein the semiconductor matrix has an effective energy gap of not more than about 0.1 eV.
Claim 14
Dependent Claim
15 words
The magnetoresistance effect element according to claim 7, wherein said non-magnetic layer contains a semiconductor.
Claim 15
Dependent Claim
24 words
The magnetoresistance effect element of claim 7, wherein said semiconductor matrix is an alloy or compound containing said transition metal, and Si or Ge.
Claim 16
Dependent Claim
82 words
A magnetoresistance effect element comprising a multilayered film having at least one first magnetic layer in which magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy gap of not more than about 1 eV, and at least one second magnetic layer containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni.
Claim 17
Dependent Claim
82 words
A magnetoresistance effect element comprising a multilayered film having at least one first magnetic layer in which magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy gap of not more than about 1 eV, and at least one second magnetic layer containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni.
Claim 18
Dependent Claim
29 words
The magnetoresistance effect element according to claim 14, wherein the magnetic metal particles contain at least two magnetic elements selected from the group consisting of Fe, Co, and Ni.
Claim 19
Dependent Claim
31 words
The magnetoresistance effect element according to claim 14, wherein substantially all of the magnetic metal particles has a particle diameter falling within the range of about 5 to about 100 nm.
Claim 20
Dependent Claim
19 words
The magnetoresistance effect element according to claim 14, wherein the magnetic metal particles substantially have a magnetostriction of zero.
Claim 21
Dependent Claim
24 words
The magnetoresistance effect element according to claim 14, wherein the semiconductor matrix has an effective energy gap of not more than about 0.1 eV.
Claim 22
Dependent Claim
24 words
The magnetoresistance effect element of claim 14, wherein said semiconductor matrix is an alloy or compound containing said transition metal, and Si or Ge.
Claim 23
Dependent Claim
70 words
A magnetoresistance effect element comprising a multilayered film having a first magnetic layer in which magnetic metal particles containing at least one selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy gap of not more than about 1 eV, and a second magnetic layer having magnetism softer than that of said first magnetic layer.
Claim 24
Dependent Claim
70 words
A magnetoresistance effect element comprising a multilayered film having a first magnetic layer in which magnetic metal particles containing at least one selected from the group consisting of Fe, Co, and Ni are dispersed in a semiconductor matrix containing a transition metal and having an effective energy gap of not more than about 1 eV, and a second magnetic layer having magnetism softer than that of said first magnetic layer.
References Cited (Backward Citations)
US5043693A
Cited
US5304975A
Cited
US5463516A
Cited
US5585196A
Cited
US5476680A
Cited
US5452163A
Cited
US5594933A
Cited
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