US5771110A
Expired / Lapsed
US
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Thin film transistor device, display device and method of fabricating the same
Assignee: Sanyo Electric Co Ltd
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Filing: 1996-07-02
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Granted: 1998-06-23
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Expires: 2016-07-02
Abstract
Abstract A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
Inventors
- 👤 Kiichi Hirano
- 👤 Naoya Sotani
- 👤 Toshifumi Yamaji
- 👤 Yoshihiro Morimoto
- 👤 Kiyoshi Yoneda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:01
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/6758; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/0229; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10D30/673; H10D30/6731; H10D30/6733; H10D30/6734; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
105 words
A semiconductor device being formed by integrating a plurality of semiconductor elements and a substrate, said semiconductor device comprising: each said semiconductor element has a heat absorption film provided between said substrate and said semiconductor elements, and an area or film thickness of said heat absorption film is relatively reduced in a portion where a relatively large number of said semiconductor elements are provided, while an area or film thickness of said heat absorption film is relatively increased in a portion where a relatively small number of said semiconductor elements are provided, in accordance with a distributed state of said semiconductor elements on said substrate.
Claim 2
Dependent Claim
105 words
A semiconductor device being formed by integrating a plurality of semiconductor elements and a substrate, said semiconductor device comprising: each said semiconductor element has a heat absorption film provided between said substrate and said semiconductor elements, and an area or film thickness of said heat absorption film is relatively reduced in a portion where a relatively large number of said semiconductor elements are provided, while an area or film thickness of said heat absorption film is relatively increased in a portion where a relatively small number of said semiconductor elements are provided, in accordance with a distributed state of said semiconductor elements on said substrate.
Claim 3
Dependent Claim
142 words
A semiconductor device being formed by integrating a plurality of semiconductor switching elements on a substrate, each said semiconductor switching element comprising: a heat absorption film being formed on said substrate; an insulating film formed on said heat absorption film: a semiconductor film being formed on said insulating film; a gate electrode being formed on said semiconductor film through a gate insulating film; and an impurity region being formed in said semiconductor film; wherein an area or film thickness of said heat absorption film is relatively reduced in a portion where a relatively large number of said semiconductor elements are provided, while an area or film thickness of said heat absorption film is relatively increased in a portion where a relatively small number of said semiconductor elements are provided, in accordance with the distributed state of said semiconductor elements on said substrate.
Claim 4
Dependent Claim
142 words
A semiconductor device being formed by integrating a plurality of semiconductor switching elements on a substrate, each said semiconductor switching element comprising: a heat absorption film being formed on said substrate; an insulating film formed on said heat absorption film: a semiconductor film being formed on said insulating film; a gate electrode being formed on said semiconductor film through a gate insulating film; and an impurity region being formed in said semiconductor film; wherein an area or film thickness of said heat absorption film is relatively reduced in a portion where a relatively large number of said semiconductor elements are provided, while an area or film thickness of said heat absorption film is relatively increased in a portion where a relatively small number of said semiconductor elements are provided, in accordance with the distributed state of said semiconductor elements on said substrate.
Claim 5
Dependent Claim
36 words
The semiconductor device in accordance with claim 1, wherein said area or film thickness of said heat absorption film is so adjusted that heat absorption of said absorption film functions substantially uniformly on said whole substrate.
Claim 6
Dependent Claim
33 words
The semiconductor device in accordance with claim 1, wherein said heat absorption film is made of a conductive material such as a metal or metal silicide, or a semiconductor material such as silicon.
Claim 7
Dependent Claim
104 words
A semiconductor device being formed by integrating a plurality of semiconductor elements on a substrate, said plurality of semiconductor elements comprising a plurality of first semiconductor elements each having a heat absorption film and a plurality of second semiconductor elements each not having a heat absorption film; wherein said second semiconductor elements are relatively concentrated in a portion where a relatively large number of said semiconductor elements are provided, while said first semiconductor elements are relatively concentrated in a portion where a relatively small number of said semiconductor elements are provided, in accordance with the distributed state of said semiconductor elements on said substrate.
Claim 8
Dependent Claim
104 words
A semiconductor device being formed by integrating a plurality of semiconductor elements on a substrate, said plurality of semiconductor elements comprising a plurality of first semiconductor elements each having a heat absorption film and a plurality of second semiconductor elements each not having a heat absorption film; wherein said second semiconductor elements are relatively concentrated in a portion where a relatively large number of said semiconductor elements are provided, while said first semiconductor elements are relatively concentrated in a portion where a relatively small number of said semiconductor elements are provided, in accordance with the distributed state of said semiconductor elements on said substrate.
Claim 9
Dependent Claim
161 words
A driver-integrated display device having a pixel part and a peripheral driving circuit part being formed on the same substrate, said driver-integrated display device comprising: a pixel driving element being provided in said pixel part; and a peripheral driving circuit element being provided in said peripheral driving circuit part; wherein said pixel driving element and said peripheral driving circuit element are formed by semiconductor switching elements, and each said semiconductor element comprises: a heat absorption film being formed on said substrate, an insulating film formed on said heat absorption film: a semiconductor film being formed on insulating film, a gate electrode being formed on said semiconductor film through a gate insulating film, and an impurity region being formed in said semiconductor film, a ratio of area or film thickness of said heat absorption film relative to said semiconductor film in said pixel part being adjusted to be larger than that of said heat absorption film in said peripheral driving circuit part.
Claim 10
Dependent Claim
161 words
A driver-integrated display device having a pixel part and a peripheral driving circuit part being formed on the same substrate, said driver-integrated display device comprising: a pixel driving element being provided in said pixel part; and a peripheral driving circuit element being provided in said peripheral driving circuit part; wherein said pixel driving element and said peripheral driving circuit element are formed by semiconductor switching elements, and each said semiconductor element comprises: a heat absorption film being formed on said substrate, an insulating film formed on said heat absorption film: a semiconductor film being formed on insulating film, a gate electrode being formed on said semiconductor film through a gate insulating film, and an impurity region being formed in said semiconductor film, a ratio of area or film thickness of said heat absorption film relative to said semiconductor film in said pixel part being adjusted to be larger than that of said heat absorption film in said peripheral driving circuit part.
Claim 11
Dependent Claim
34 words
The display device in accordance with claim 6, wherein said area of said heat absorption film in said pixel part is set to 0.01 to 60% of the whole area of said pixel part.
Claim 12
Dependent Claim
38 words
The display device in accordance with claim 6, wherein said area of said heat absorption film in said peripheral driving circuit part is set to 0.01 to 60% of the whole area of said peripheral driving circuit part.
Claim 13
Dependent Claim
32 words
The display device in accordance with claim 6, wherein said area of said heat absorption film in said substrate is set to 0.01 to 60% of the whole area of said substrate.
Claim 14
Dependent Claim
28 words
The display device in accordance with claim 6, wherein said substrate is one of a pair of substrates being opposed to each other through a liquid crystal layer.
Claim 15
Dependent Claim
34 words
The display device in accordance with claim 6, wherein each said heat absorption film is provided in a size and within an area substantially corresponding to a channel region of each said semiconductor film.
Claim 16
Dependent Claim
33 words
The display device in accordance with claim 6, wherein said heat absorption effect of each said heat absorption film is adjusted by changing the area or the thickness of said heat absorption film.
Claim 17
Dependent Claim
20 words
The display device in accordance with claim 6, wherein an insulating film is formed on each said heat absorption film.
Claim 18
Dependent Claim
34 words
The display device in accordance with claim 6, wherein each said heat absorption film is made of a conductive material such as a metal or metal silicide, or a semiconductor material such as silicon.
Claim 19
Dependent Claim
18 words
The display device in accordance with claim 6, wherein each said heat absorption film acts as a shade.
Claim 20
Dependent Claim
15 words
The display device in accordance with claim 6, wherein said substrate is a transparent substrate.
Claim 21
Dependent Claim
25 words
The display device in accordance with claim 6, wherein RTA employing a xenon arc lamp as a heat source is employed as said heat treatment.
Claim 22
Dependent Claim
104 words
A display device being formed by integrating a plurality of semiconductor elements on a substrate, said plurality of semiconductor elements comprising a plurality of first semiconductor elements each having a heat absorption film and a plurality of second semiconductor elements each not having a heat absorption film; wherein said second semiconductor elements are relatively concentrated in a portion where a relatively large number of said semiconductor elements are provided, while said first semiconductor elements are relatively concentrated in a portion where a relatively small number of said semiconductor elements are provided, in accordance with the distributed state of said semiconductor elements on said substrate.
Claim 23
Dependent Claim
104 words
A display device being formed by integrating a plurality of semiconductor elements on a substrate, said plurality of semiconductor elements comprising a plurality of first semiconductor elements each having a heat absorption film and a plurality of second semiconductor elements each not having a heat absorption film; wherein said second semiconductor elements are relatively concentrated in a portion where a relatively large number of said semiconductor elements are provided, while said first semiconductor elements are relatively concentrated in a portion where a relatively small number of said semiconductor elements are provided, in accordance with the distributed state of said semiconductor elements on said substrate.
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