Abstract The present invention relates to a method of a sequencial WSi/α-Si sputtering process, more particularly to a method of in-situ wafer cooling for a sequencial WSi/α-Si sputtering process. A sputtering process of WSi and a sputtering process of α-Si are finished in a multi-chamber sputtering apparatus according to the invention; meanwhile, a wafer is cooled down by bolwing of inert gas before a process of sputtering α-Si starts. Thus, compared to traditional art of finishing WSi/α-Si sputtering in two apparatus, partial time of vacuuming and venting required in a sputtering process is saved according to the invention, thereby, shortening the production cycle time, reducing the possibility of wafer contamination, and suppressing the fabricating cost.
A method of in-situ wafer cooling for sequential sputtering WSi/α-Si, comprising the steps of: sputtering a WSi layer on a wafer in a multi-chamber sputtering apparatus; then, transporting the wafer to another chamber and cooling down the wafer by blowing of inert gas at the rear of the wafer; and sputtering an α-Si layer in condition of continuing blowing of inert gas.
Claim 2
Independent Claim
62 words
A method of in-situ wafer cooling for sequential sputtering WSi/α-Si, comprising the steps of: sputtering a WSi layer on a wafer in a multi-chamber sputtering apparatus; then, transporting the wafer to another chamber and cooling down the wafer by blowing of inert gas at the rear of the wafer; and sputtering an α-Si layer in condition of continuing blowing of inert gas.
Claim 3
Dependent Claim
21 words
A method of in-situ wafer cooling for sequential sputtering WSi/α-Si according to claim 1 , wherein said inert gas is Ar.