US5597458A
Expired / Lapsed
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Method for producing alloy films using cold sputter deposition process
Assignee: Advanced Micro Devices Inc
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Filing: 1995-07-10
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Granted: 1997-01-28
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Expires: 2015-07-10
Abstract
Abstract A method for forming an alloy film by cooling a substrate during a sputter deposition process. In one embodiment, aluminum-copper (Al-Cu) alloy film is deposited on a substrate while the substrate is maintained at a temperature lower than 100 DEG C. during a sputter deposition process, thereby reducing the precipitation of CuAl2. The substrate is cooled by pumping a coolant gas through a cooled platen and against the substrate during processing. Subsequent film formation prior to etching is also performed below 100 DEG C. to prevent precipitation of CuAl2 until the Al-Cu alloy film is etched. Large crystal grains are formed by annealing the substrate after etching.
Inventors
- 👤 John E. Sanchez, Jr.
- 👤 Darin A. Chan
- 👤 Paul R. Besser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:59
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/541; C23C14/06; C23C14/14; C23C14/16; C23C14/165; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
81 words
A method for forming an alloy film on a base material, the method comprising the steps of: mounting the base material on a platen; pumping a coolant fluid through the platen such that the base material is cooled to a temperature lower than a precipitation temperature of an unwanted phase; and depositing the alloy film over the cooled base material using a sputter deposition process while maintaining the temperature of the base material below the precipitation temperature of the unwanted phase.
Claim 2
Independent Claim
81 words
A method for forming an alloy film on a base material, the method comprising the steps of: mounting the base material on a platen; pumping a coolant fluid through the platen such that the base material is cooled to a temperature lower than a precipitation temperature of an unwanted phase; and depositing the alloy film over the cooled base material using a sputter deposition process while maintaining the temperature of the base material below the precipitation temperature of the unwanted phase.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein the step of cooling further comprises maintaining the base material at a temperature lower than 100° C. during the step of depositing the alloy film.
Claim 4
Dependent Claim
53 words
The method according to claim 1, wherein the step of cooling wherein the step of pumping a coolant fluid through the platen comprises pumping room temperature water at a rate such that the base material is maintained within the range of 50° to 75° C. during the step of depositing the alloy film.
Claim 5
Independent Claim
77 words
A method for forming an aluminum alloy film on a substrate, the method comprising the steps of: mounting the substrate on a platen; pumping a coolant fluid through the platen such that the platen is maintained at a first temperature, thereby cooling the substrate to a temperature lower than 100° C.; and depositing the aluminum alloy film on the cooled substrate using a sputter deposition process while maintaining the substrate at a temperature lower than 100° C.
Claim 6
Independent Claim
77 words
A method for forming an aluminum alloy film on a substrate, the method comprising the steps of: mounting the substrate on a platen; pumping a coolant fluid through the platen such that the platen is maintained at a first temperature, thereby cooling the substrate to a temperature lower than 100° C.; and depositing the aluminum alloy film on the cooled substrate using a sputter deposition process while maintaining the substrate at a temperature lower than 100° C.
Claim 7
Dependent Claim
22 words
The method according to claim 4, wherein the substrate is maintained at a temperature in the range of 50° to 75° C.
Claim 8
Dependent Claim
44 words
The method according to claim 4, further comprising the steps of: etching the aluminum alloy film and the second layer; and annealing the substrate at a temperature of 400° C. or higher after the step of etching; wherein the aluminum alloy film includes copper.
Claim 9
Dependent Claim
18 words
The method according to claim 6, wherein the deposited aluminum-copper alloy film is etched using a reactive-ion-etching process.
Claim 10
Independent Claim
118 words
A method for fabricating an integrated circuit device, the integrated circuit device including a substrate and a plurality of layers formed on an upper surface of the substrate, at least one of the plurality of layers comprising an aluminum alloy film, the method comprising the steps of: mounting the substrate onto a platen; depositing a first layer on the substrate; depositing the aluminum alloy film on the first layer using a sputter deposition process; and depositing a second layer on the aluminum alloy film; wherein a coolant fluid is circulated through the platen at a rate such that the substrate is maintained at a temperature lower than 100° C. during the step of depositing the aluminum alloy film.
Claim 11
Independent Claim
118 words
A method for fabricating an integrated circuit device, the integrated circuit device including a substrate and a plurality of layers formed on an upper surface of the substrate, at least one of the plurality of layers comprising an aluminum alloy film, the method comprising the steps of: mounting the substrate onto a platen; depositing a first layer on the substrate; depositing the aluminum alloy film on the first layer using a sputter deposition process; and depositing a second layer on the aluminum alloy film; wherein a coolant fluid is circulated through the platen at a rate such that the substrate is maintained at a temperature lower than 100° C. during the step of depositing the aluminum alloy film.
Claim 12
Dependent Claim
22 words
The method according to claim 8, wherein the substrate is maintained at a temperature in the range of 50° to 75° C.
Claim 13
Dependent Claim
39 words
The method according to claim 8, further comprising the steps of: etching the aluminum alloy film; and annealing the substrate at a temperature of 400° C. or higher after the step of etching; wherein the aluminum alloy includes copper.
Claim 14
Dependent Claim
18 words
The method according to claim 10, wherein the deposited aluminum alloy film is etched using a reactive-ion-etching process.
Claim 15
Independent Claim
62 words
A method for forming an Al-Cu film on a base material, the method comprising the steps of: continuously cooling the base material such that the base material has a temperature in the range of 50° C. and 75° C.; and depositing the Al-Cu film over the base material using a sputter deposition process while maintaining the base material at the said temperature.
Claim 16
Independent Claim
62 words
A method for forming an Al-Cu film on a base material, the method comprising the steps of: continuously cooling the base material such that the base material has a temperature in the range of 50° C. and 75° C.; and depositing the Al-Cu film over the base material using a sputter deposition process while maintaining the base material at the said temperature.
References Cited (Backward Citations)
JPH0291941A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |